Non-resonant dot-cavity coupling and its applications in resonant quantum dot spectroscopy

We present experimental investigations on the non-resonant dot-cavity coupling of a single quantum dot inside a micro-pillar where the dot has been resonantly excited in the s-shell, thereby avoiding the generation of additional charges in the QD and its surrounding. As a direct proof of the pure single dot-cavity system, strong photon anti-bunching is consistently observed in the autocorrelation functions of the QD and the mode emission, as well as in the cross-correlation function between the dot and mode signals. Strong Stokes and anti-Stokes-like emission is observed for energetic QD-mode detunings of up to ~100 times the QD linewidth. Furthermore, we demonstrate that non-resonant dot-cavity coupling can be utilized to directly monitor and study relevant QD s-shell properties like fine-structure splittings, emission saturation and power broadening, as well as photon statistics with negligible background contributions. Our results open a new perspective on the understanding and implementation of dot-cavity systems for single-photon sources, single and multiple quantum dot lasers, semiconductor cavity quantum electrodynamics, and their implementation, e.g. in quantum information technology.Comment: 17 pages, 4 figure

Assessing the alignment accuracy of state-of-the-art deterministic fabrication methods for single quantum dot devices

The realization of efficient quantum light sources relies on the integration of self-assembled quantum dots (QDs) into photonic nanostructures with high spatial positioning accuracy. In this work, we present a comprehensive investigation of the QD position accuracy, obtained using two marker-based QD positioning techniques, photoluminescence (PL) and cathodoluminescence (CL) imaging, as well as using a marker-free in-situ electron beam lithography (in-situ EBL) technique. We employ four PL imaging configurations with three different image processing approaches and compare them with CL imaging. We fabricate circular mesa structures based on the obtained QD coordinates from both PL and CL image processing to evaluate the final positioning accuracy. This yields final position offset of the QD relative to the mesa center of $\mu_x$ = (-40$\pm$58) nm and $\mu_y$ = (-39$\pm$85) nm with PL imaging and $\mu_x$ = (-39$\pm$30) nm and $\mu_y$ = (25$\pm$77) nm with CL imaging, which are comparable to the offset $\mu_x$ = (20$\pm$40) nm and $\mu_y$ = (-14$\pm$39) nm obtained using the in-situ EBL method. We discuss the possible causes of the observed offsets, which are significantly larger than the QD localization uncertainty obtained from simply imaging the QD light emission from an unstructured wafer. Our study highlights the influences of the image processing technique and the subsequent fabrication process on the final positioning accuracy for a QD placed inside a photonic nanostructure

Photon-number-resolved measurement of an exciton-polariton condensate

We measure the full photon-number distribution emitted from a Bose condensate of microcavity exciton polaritons confined in a micropillar cavity. The statistics are acquired by means of a photon-number-resolving transition edge sensor. We directly observe that the photon-number distribution evolves with the nonresonant optical excitation power from geometric to quasi-Poissonian statistics, which is canonical for a transition from a thermal to a coherent state. Moreover, the photon-number distribution allows one to evaluate the higher-order photon correlations, shedding further light on the coherence formation and phase transition of the polariton condensate. The experimental data are analyzed in terms of thermal-coherent states, which gives direct access to the thermal and coherent fraction from the measured distributions. These results pave the way for a full understanding of the contribution of interactions in light-matter condensates in the coherence buildup at threshold.Ministry of Science and Education of the Russian Federation (Grant No. RFMEFI61617X0085

Human Galectins Induce Conversion of Dermal Fibroblasts into Myofibroblasts and Production of Extracellular Matrix: Potential Application in Tissue Engineering and Wound Repair

Members of the galectin family of endogenous lectins are potent adhesion/growth-regulatory effectors. Their multi-functionality opens possibilities for their use in bioapplications. We studied whether human galectins induce the conversion of human dermal fibroblasts into myofibroblasts (MFBs) and the production of a bioactive extracellular matrix scaffold is suitable for cell culture. Testing a panel of galectins of all three subgroups, including natural and engineered variants, we detected activity for the proto-type galectin-1 and galectin-7, the chimera-type galectin-3 and the tandem-repeat-type galectin-4. The activity of galectin-1 required the integrity of the carbohydrate recognition domain. It was independent of the presence of TGF-beta 1, but it yielded an additive effect. The resulting MFBs, relevant, for example, for tumor progression, generated a matrix scaffold rich in fibronectin and galectin-1 that supported keratinocyte culture without feeder cells. Of note, keratinocytes cultured on this substratum presented a stem-like cell phenotype with small size and keratin-19 expression. In vivo in rats, galectin-1 had a positive effect on skin wound closure 21 days after surgery. In conclusion, we describe the differential potential of certain human galectins to induce the conversion of dermal fibroblasts into MFBs and the generation of a bioactive cell culture substratum. Copyright (C) 2011 S. Karger AG, Base

Design of electrically driven single photon source based on dielectric passive cavity structure at 1.3 μm

A combination of advanced concepts is applied for designing micro-cavity structures aimed for single-photon sources with high photon-extraction efficiency in the telecom O-band at ~1.3 μm. The device design consists of a broad stop-band bottom distributed Bragg reflector (DBR), a top DBR formed in a dielectric micropillar with additional circular Bragg grating and a central dielectric passive cavity. This combination of photonic elements is compatible with electric carrier injection and provides overall photon-extraction efficiency of ~83% as shown by 3D finite-difference time-domain simulations

Laser oscillation in a strongly coupled single quantum dot-nanocavity system

Strong coupling of photons and materials in semiconductor nanocavity systems has been investigated because of its potentials in quantum information processing and related applications, and has been testbeds for cavity quantum electrodynamics (QED). Interesting phenomena such as coherent exchange of a single quantum between a single quantum dot and an optical cavity, called vacuum Rabi oscillation, and highly efficient cavity QED lasers have been reported thus far. The coexistence of vacuum Rabi oscillation and laser oscillation appears to be contradictory in nature, because the fragile reversible process may not survive in laser oscillation. However, recently, it has been theoretically predicted that the strong-coupling effect could be sustained in laser oscillation in properly designed semiconductor systems. Nevertheless, the experimental realization of this phenomenon has remained difficult since the first demonstration of the strong-coupling, because an extremely high cavity quality factor and strong light-matter coupling are both required for this purpose. Here, we demonstrate the onset of laser oscillation in the strong-coupling regime in a single quantum dot (SQD)-cavity system. A high-quality semiconductor optical nanocavity and strong SQD-field coupling enabled to the onset of lasing while maintaining the fragile coherent exchange of quanta between the SQD and the cavity. In addition to the interesting physical features, this device is seen as a prototype of an ultimate solid state light source with an SQD gain, which operates at ultra-low power, with expected applications in future nanophotonic integrated systems and monolithic quantum information devices.Comment: 12 pages, 4 figure

Room temperature, continuous wave lasing in microcylinder and microring quantum dot laser diodes

This content may be downloaded for personal use only. Any other use requires prior permission of the author and AIP Publishing. This material originally appeared in Appl. Phys. Lett. 100, 031111 (2012) and may be found at https://doi.org/10.1063/1.3678031.We demonstrate room temperature, continuous wave lasing of laser diodes based on AlGaAs whispering gallery mode (WGM) resonators (microcylinder and microring) embedding a quantum dot (QD) active layer. Using InGaAlAs QDs, high-Q (>60 000) lasing modes are observed around 910 nm, up to 50 °C. Lasing with similar performance is obtained around 1230 nm, using InAs QDs. Furthermore, we show that the current injection in the active part of the device is improved in ring resonators, leading to threshold currents of approximately 4 mA for a device with 80 μm diameter. This geometry also suppresses WGMs with a high radial order, thus simplifying the lasing spectra. In these conditions, stable single-mode and two-color lasing can be obtained.EC/FP7/250056/EU/Terahertz room-temperature integrated parametric source/TREASUR

Photonic transistor and router using a single quantum-dotconfined spin in a single-sided optical microcavity

The future Internet is very likely the mixture of all-optical Internet with low power consumption and quantum Internet with absolute security guaranteed by the laws of quantum mechanics. Photons would be used for processing, routing and com-munication of data, and photonic transistor using a weak light to control a strong light is the core component as an optical analogue to the electronic transistor that forms the basis of modern electronics. In sharp contrast to previous all-optical tran-sistors which are all based on optical nonlinearities, here I introduce a novel design for a high-gain and high-speed (up to terahertz) photonic transistor and its counterpart in the quantum limit, i.e., single-photon transistor based on a linear optical effect: giant Faraday rotation induced by a single electronic spin in a single-sided optical microcavity. A single-photon or classical optical pulse as the gate sets the spin state via projective measurement and controls the polarization of a strong light to open/block the photonic channel. Due to the duality as quantum gate for quantum information processing and transistor for optical information processing, this versatile spin-cavity quantum transistor provides a solid-state platform ideal for all-optical networks and quantum networks

Multi-dimensional modeling and simulation of semiconductor nanophotonic devices

Self-consistent modeling and multi-dimensional simulation of semiconductor nanophotonic devices is an important tool in the development of future integrated light sources and quantum devices. Simulations can guide important technological decisions by revealing performance bottlenecks in new device concepts, contribute to their understanding and help to theoretically explore their optimization potential. The efficient implementation of multi-dimensional numerical simulations for computer-aided design tasks requires sophisticated numerical methods and modeling techniques. We review recent advances in device-scale modeling of quantum dot based single-photon sources and laser diodes by self-consistently coupling the optical Maxwell equations with semiclassical carrier transport models using semi-classical and fully quantum mechanical descriptions of the optically active region, respectively. For the simulation of realistic devices with complex, multi-dimensional geometries, we have developed a novel hp-adaptive finite element approach for the optical Maxwell equations, using mixed meshes adapted to the multi-scale properties of the photonic structures. For electrically driven devices, we introduced novel discretization and parameter-embedding techniques to solve the drift-diffusion system for strongly degenerate semiconductors at cryogenic temperature. Our methodical advances are demonstrated on various applications, including vertical-cavity surface-emitting lasers, grating couplers and single-photon sources