68 research outputs found
Applications of M.G. Krein's Theory of Regular Symmetric Operators to Sampling Theory
The classical Kramer sampling theorem establishes general conditions that
allow the reconstruction of functions by mean of orthogonal sampling formulae.
One major task in sampling theory is to find concrete, non trivial realizations
of this theorem. In this paper we provide a new approach to this subject on the
basis of the M. G. Krein's theory of representation of simple regular symmetric
operators having deficiency indices (1,1). We show that the resulting sampling
formulae have the form of Lagrange interpolation series. We also characterize
the space of functions reconstructible by our sampling formulae. Our
construction allows a rigorous treatment of certain ideas proposed recently in
quantum gravity.Comment: 15 pages; v2: minor changes in abstract, addition of PACS numbers,
changes in some keywords, some few changes in the introduction, correction of
the proof of the last theorem, and addition of some comments at the end of
the fourth sectio
Π‘Ρ Π΅ΠΌΠ° ΡΠ»Π΅ΠΌΠ΅Π½ΡΠ° ΠΠ΅Π»ΡΡΡΠ΅ Π½Π° ΠΏΠΎΠ»ΡΠΏΡΠΎΠ²ΠΎΠ΄Π½ΠΈΠΊΠ°Ρ Ρ ΠΏΡΡΠΆΠΊΠΎΠ²ΡΠΌ ΠΏΠ΅ΡΠ΅Π½ΠΎΡΠΎΠΌ ΡΠ»Π΅ΠΊΡΡΠΎΠ½ΠΎΠ² ΠΏΠΎ Π΄Π΅ΡΠ΅ΠΊΡΠ°ΠΌ
The study of thermoelectric properties of crystalline semiconductors with structural defects is of practical interest in the development of radiation-resistant Peltier elements. In this case, the spectrum of energy levels of hydrogen-like impurities and intrinsic point defects in the band gap (energy gap) of crystal plays an important role.The purpose of this work is to analyze the features of the single-electron band model of semiconductors with hopping electron migration both via atoms of hydrogen-like impurities and via their own point triplecharged intrinsic defects in the c- and v-bands, as well as to search for the possibility of their use in the Peltier element in the temperature range, when the transitions of electrons and holes from impurity atoms and/or intrinsic defects to the c- and v-bands can be neglected.For Peltier elements with electron hopping migration we propose: (i) an h-diode containing |d1)and |d2)-regions with hydrogen-like donors of two types in the charge states (0) and (+1) and compensating them hydrogen-like acceptors in the charge state (β1); (ii) a homogeneous semiconductor containing intrinsic t-defects in the charge states (β1, 0, +1), as well as ions of donors and acceptors to control the distribution of t-defects over the charge states. The band diagrams of the proposed Peltier elements in equilibrium and upon excitation of a stationary hopping electric current are analyzed.A model of the h-diode containing hydrogen-like donors of two types |d1) and |d2) with hopping migration of electrons between them for 50 % compensation by acceptors is considered. It is shown that in the case of the reverse (forward) electrical bias of the diode, the cooling (heating) of the region of the electric double layer between |d1)and |d2)-regions is possible.A Peltier element based on a semiconductor with point t-defects is considered. It is assumed that the temperature and the concentration of ions of hydrogen-like acceptors and donors are to assure all t-defects to be in the charge state (0). It is shown that in such an element it is possible to cool down the metal-semiconductor contact under a negative electric potential and to heat up the opposite contact under a positive potential.ΠΡΡΠ»Π΅Π΄ΠΎΠ²Π°Π½ΠΈΠ΅ ΡΠ΅ΡΠΌΠΎΡΠ»Π΅ΠΊΡΡΠΈΡΠ΅ΡΠΊΠΈΡ
ΡΠ²ΠΎΠΉΡΡΠ² ΠΊΡΠΈΡΡΠ°Π»Π»ΠΈΡΠ΅ΡΠΊΠΈΡ
ΠΏΠΎΠ»ΡΠΏΡΠΎΠ²ΠΎΠ΄Π½ΠΈΠΊΠΎΠ² Ρ Π΄Π΅ΡΠ΅ΠΊΡΠ°ΠΌΠΈ ΡΡΡΡΠΊΡΡΡΡ ΠΏΡΠ΅Π΄ΡΡΠ°Π²Π»ΡΠ΅Ρ ΠΏΡΠ°ΠΊΡΠΈΡΠ΅ΡΠΊΠΈΠΉ ΠΈΠ½ΡΠ΅ΡΠ΅Ρ ΠΏΡΠΈ ΡΠΎΠ·Π΄Π°Π½ΠΈΠΈ ΡΠ°Π΄ΠΈΠ°ΡΠΈΠΎΠ½Π½ΠΎ-ΡΡΠΎΠΉΠΊΠΈΡ
ΡΠ»Π΅ΠΌΠ΅Π½ΡΠΎΠ² ΠΠ΅Π»ΡΡΡΠ΅. ΠΡΠΈ ΡΡΠΎΠΌ Π²Π°ΠΆΠ½ΡΡ ΡΠΎΠ»Ρ ΠΈΠ³ΡΠ°Π΅Ρ ΡΠΏΠ΅ΠΊΡΡ ΡΡΠΎΠ²Π½Π΅ΠΉ ΡΠ½Π΅ΡΠ³ΠΈΠΈ Π²ΠΎΠ΄ΠΎΡΠΎΠ΄ΠΎΠΏΠΎΠ΄ΠΎΠ±Π½ΡΡ
ΠΏΡΠΈΠΌΠ΅ΡΠ΅ΠΉ ΠΈ ΡΠΎΠ±ΡΡΠ²Π΅Π½Π½ΡΡ
ΡΠΎΡΠ΅ΡΠ½ΡΡ
Π΄Π΅ΡΠ΅ΠΊΡΠΎΠ² Π² ΡΠ½Π΅ΡΠ³Π΅ΡΠΈΡΠ΅ΡΠΊΠΎΠΉ ΡΠ΅Π»ΠΈ (Π·Π°ΠΏΡΠ΅ΡΡΠ½Π½ΠΎΠΉ Π·ΠΎΠ½Π΅) ΠΊΡΠΈΡΡΠ°Π»Π»Π°.Π¦Π΅Π»Ρ ΡΠ°Π±ΠΎΡΡ Π°Π½Π°Π»ΠΈΠ· ΠΎΡΠΎΠ±Π΅Π½Π½ΠΎΡΡΠ΅ΠΉ ΠΎΠ΄Π½ΠΎΡΠ»Π΅ΠΊΡΡΠΎΠ½Π½ΠΎΠΉ Π·ΠΎΠ½Π½ΠΎΠΉ ΠΌΠΎΠ΄Π΅Π»ΠΈ ΠΏΠΎΠ»ΡΠΏΡΠΎΠ²ΠΎΠ΄Π½ΠΈΠΊΠΎΠ² Ρ ΠΏΡΡΠΆΠΊΠΎΠ²ΠΎΠΉ ΠΌΠΈΠ³ΡΠ°ΡΠΈΠ΅ΠΉ ΡΠ»Π΅ΠΊΡΡΠΎΠ½ΠΎΠ² ΠΊΠ°ΠΊ ΠΏΠΎ Π°ΡΠΎΠΌΠ°ΠΌ Π²ΠΎΠ΄ΠΎΡΠΎΠ΄ΠΎΠΏΠΎΠ΄ΠΎΠ±Π½ΡΡ
ΠΏΡΠΈΠΌΠ΅ΡΠ΅ΠΉ, ΡΠ°ΠΊ ΠΈ ΠΏΠΎ ΡΠΎΠ±ΡΡΠ²Π΅Π½Π½ΡΠΌ ΡΠΎΡΠ΅ΡΠ½ΡΠΌ ΡΡΡΡ
Π·Π°ΡΡΠ΄Π½ΡΠΌ Π΄Π΅ΡΠ΅ΠΊΡΠ°ΠΌ, Π° ΡΠ°ΠΊΠΆΠ΅ ΠΏΠΎΠΈΡΠΊ Π²ΠΎΠ·ΠΌΠΎΠΆΠ½ΠΎΡΡΠΈ ΠΈΡ
ΠΈΡΠΏΠΎΠ»ΡΠ·ΠΎΠ²Π°Π½ΠΈΡ Π² ΡΠ»Π΅ΠΌΠ΅Π½ΡΠ΅ ΠΠ΅Π»ΡΡΡΠ΅ Π² ΠΎΠ±Π»Π°ΡΡΠΈ ΡΠ΅ΠΌΠΏΠ΅ΡΠ°ΡΡΡ, ΠΊΠΎΠ³Π΄Π° ΠΏΠ΅ΡΠ΅Ρ
ΠΎΠ΄Π°ΠΌΠΈ ΡΠ»Π΅ΠΊΡΡΠΎΠ½ΠΎΠ² ΠΈ Π΄ΡΡΠΎΠΊ Ρ Π°ΡΠΎΠΌΠΎΠ² ΠΏΡΠΈΠΌΠ΅ΡΠ΅ΠΉ ΠΈ/ΠΈΠ»ΠΈ ΡΠΎΠ±ΡΡΠ²Π΅Π½Π½ΡΡ
Π΄Π΅ΡΠ΅ΠΊΡΠΎΠ² Π² cΠΈ v-Π·ΠΎΠ½Ρ ΠΌΠΎΠΆΠ½ΠΎ ΠΏΡΠ΅Π½Π΅Π±ΡΠ΅ΡΡ.Π ΠΊΠ°ΡΠ΅ΡΡΠ²Π΅ ΡΠ»Π΅ΠΌΠ΅Π½ΡΠΎΠ² ΠΠ΅Π»ΡΡΡΠ΅ Ρ ΠΏΡΡΠΆΠΊΠΎΠ²ΠΎΠΉ ΠΌΠΈΠ³ΡΠ°ΡΠΈΠ΅ΠΉ ΡΠ»Π΅ΠΊΡΡΠΎΠ½ΠΎΠ² ΠΏΡΠ΅Π΄Π»ΠΎΠΆΠ΅Π½Ρ: 1) h-Π΄ΠΈΠΎΠ΄, ΡΠΎΠ΄Π΅ΡΠΆΠ°ΡΠΈΠΉ |d1)ΠΈ |d2)-ΠΎΠ±Π»Π°ΡΡΠΈ Ρ Π²ΠΎΠ΄ΠΎΡΠΎΠ΄ΠΎΠΏΠΎΠ΄ΠΎΠ±Π½ΡΠΌΠΈ Π΄ΠΎΠ½ΠΎΡΠ°ΠΌΠΈ Π΄Π²ΡΡ
ΡΠΎΡΡΠΎΠ² Π² Π·Π°ΡΡΠ΄ΠΎΠ²ΡΡ
ΡΠΎΡΡΠΎΡΠ½ΠΈΡΡ
(0) ΠΈ (+1) ΠΈ ΠΊΠΎΠΌΠΏΠ΅Π½ΡΠΈΡΡΡΡΠΈΠ΅ ΠΈΡ
Π²ΠΎΠ΄ΠΎΡΠΎΠ΄ΠΎΠΏΠΎΠ΄ΠΎΠ±Π½ΡΠ΅ Π°ΠΊΡΠ΅ΠΏΡΠΎΡΡ Π² Π·Π°ΡΡΠ΄ΠΎΠ²ΠΎΠΌ ΡΠΎΡΡΠΎΡΠ½ΠΈΠΈ (β1); 2) ΠΎΠ΄Π½ΠΎΡΠΎΠ΄Π½ΡΠΉ ΠΏΠΎΠ»ΡΠΏΡΠΎΠ²ΠΎΠ΄Π½ΠΈΠΊ, ΡΠΎΠ΄Π΅ΡΠΆΠ°ΡΠΈΠΉ ΡΠΎΠ±ΡΡΠ²Π΅Π½Π½ΡΠ΅ t-Π΄Π΅ΡΠ΅ΠΊΡΡ Π² Π·Π°ΡΡΠ΄ΠΎΠ²ΡΡ
ΡΠΎΡΡΠΎΡΠ½ΠΈΡΡ
(β1, 0, +1), Π° ΡΠ°ΠΊΠΆΠ΅ ΠΈΠΎΠ½Ρ Π΄ΠΎΠ½ΠΎΡΠΎΠ² ΠΈ Π°ΠΊΡΠ΅ΠΏΡΠΎΡΠΎΠ² Π΄Π»Ρ ΡΠΏΡΠ°Π²Π»Π΅Π½ΠΈΡ ΡΠ°ΡΠΏΡΠ΅Π΄Π΅Π»Π΅Π½ΠΈΠ΅ΠΌ t-Π΄Π΅ΡΠ΅ΠΊΡΠΎΠ² ΠΏΠΎ Π·Π°ΡΡΠ΄ΠΎΠ²ΡΡ
ΡΠΎΡΡΠΎΡΠ½ΠΈΡΠΌ. ΠΡΠΎΠ°Π½Π°Π»ΠΈΠ·ΠΈΡΠΎΠ²Π°Π½Ρ Π·ΠΎΠ½Π½ΡΠ΅ Π΄ΠΈΠ°Π³ΡΠ°ΠΌΠΌΡ ΠΏΡΠ΅Π΄Π»Π°Π³Π°Π΅ΠΌΡΡ
ΡΠ»Π΅ΠΌΠ΅Π½ΡΠΎΠ² ΠΠ΅Π»ΡΡΡΠ΅ Π² ΡΠ°Π²Π½ΠΎΠ²Π΅ΡΠΈΠΈ Β ΠΈ ΠΏΡΠΈ Π²ΠΎΠ·Π±ΡΠΆΠ΄Π΅Π½ΠΈΠΈ ΡΡΠ°ΡΠΈΠΎΠ½Π°ΡΠ½ΠΎΠ³ΠΎ ΠΏΡΡΠΆΠΊΠΎΠ²ΠΎΠ³ΠΎ ΡΠ»Π΅ΠΊΡΡΠΈΡΠ΅ΡΠΊΠΎΠ³ΠΎ ΡΠΎΠΊΠ°.Π Π°ΡΡΠΌΠΎΡΡΠ΅Π½Π° ΠΌΠΎΠ΄Π΅Π»Ρ h-Π΄ΠΈΠΎΠ΄Π°, ΡΠΎΠ΄Π΅ΡΠΆΠ°ΡΠ΅Π³ΠΎ Π²ΠΎΠ΄ΠΎΡΠΎΠ΄ΠΎΠΏΠΎΠ΄ΠΎΠ±Π½ΡΠ΅ Π΄ΠΎΠ½ΠΎΡΡ Π΄Π²ΡΡ
ΡΠΎΡΡΠΎΠ² |d1) ΠΈ |d2) Ρ ΠΏΡΡΠΆΠΊΠΎΠ²ΠΎΠΉ ΠΌΠΈΠ³ΡΠ°ΡΠΈΠ΅ΠΉ ΠΌΠ΅ΠΆΠ΄Ρ Π½ΠΈΠΌΠΈ ΡΠ»Π΅ΠΊΡΡΠΎΠ½ΠΎΠ² ΠΏΡΠΈ ΠΊΠΎΠΌΠΏΠ΅Π½ΡΠ°ΡΠΈΠΈ ΠΈΡ
Π½Π° 50 % Π°ΠΊΡΠ΅ΠΏΡΠΎΡΠ°ΠΌΠΈ. ΠΠΎΠΊΠ°Π·Π°Π½ΠΎ, ΡΡΠΎ ΠΏΡΠΈ ΠΎΠ±ΡΠ°ΡΠ½ΠΎΠΌ (ΠΏΡΡΠΌΠΎΠΌ) ΡΠ»Π΅ΠΊΡΡΠΈΡΠ΅ΡΠΊΠΎΠΌ ΡΠΌΠ΅ΡΠ΅Π½ΠΈΠΈ Π΄ΠΈΠΎΠ΄Π° Π²ΠΎΠ·ΠΌΠΎΠΆΠ½ΠΎ ΠΎΡ
Π»Π°ΠΆΠ΄Π΅Π½ΠΈΠ΅ (Π½Π°Π³ΡΠ΅Π²Π°Π½ΠΈΠ΅) ΠΎΠ±Π»Π°ΡΡΠΈ Π΄Π²ΠΎΠΉΠ½ΠΎΠ³ΠΎ ΡΠ»Π΅ΠΊΡΡΠΈΡΠ΅ΡΠΊΠΎΠ³ΠΎ ΡΠ»ΠΎΡ ΠΌΠ΅ΠΆΠ΄Ρ |d1)ΠΈ |d2)-ΠΎΠ±Π»Π°ΡΡΡΠΌΠΈ.Π Π°ΡΡΠΌΠΎΡΡΠ΅Π½ ΡΠ»Π΅ΠΌΠ΅Π½Ρ ΠΠ΅Π»ΡΡΡΠ΅ Π½Π° ΠΎΡΠ½ΠΎΠ²Π΅ ΠΏΠΎΠ»ΡΠΏΡΠΎΠ²ΠΎΠ΄Π½ΠΈΠΊΠ° Ρ ΡΠΎΡΠ΅ΡΠ½ΡΠΌΠΈ t-Π΄Π΅ΡΠ΅ΠΊΡΠ°ΠΌΠΈ. ΠΡΠΈΠ½ΠΈΠΌΠ°Π»ΠΎΡΡ, ΡΡΠΎ ΡΠ΅ΠΌΠΏΠ΅ΡΠ°ΡΡΡΠ°, Π° ΡΠ°ΠΊΠΆΠ΅ ΠΊΠΎΠ½ΡΠ΅Π½ΡΡΠ°ΡΠΈΠΈ ΠΈΠΎΠ½ΠΎΠ² Π²ΠΎΠ΄ΠΎΡΠΎΠ΄ΠΎΠΏΠΎΠ΄ΠΎΠ±Π½ΡΡ
Π°ΠΊΡΠ΅ΠΏΡΠΎΡΠΎΠ² ΠΈ Π΄ΠΎΠ½ΠΎΡΠΎΠ² ΡΠ°ΠΊΠΎΠ²Ρ, ΡΡΠΎ ΠΏΡΠ°ΠΊΡΠΈΡΠ΅ΡΠΊΠΈ Π²ΡΠ΅ t-Π΄Π΅ΡΠ΅ΠΊΡΡ Π½Π°Ρ
ΠΎΠ΄ΡΡΡΡ Π² Π·Π°ΡΡΠ΄ΠΎΠ²ΠΎΠΌ ΡΠΎΡΡΠΎΡΠ½ΠΈΠΈ (0). ΠΠΎΠΊΠ°Π·Π°Π½ΠΎ, ΡΡΠΎ Π² ΡΠ°ΠΊΠΎΠΌ ΡΠ»Π΅ΠΌΠ΅Π½ΡΠ΅ Π²ΠΎΠ·ΠΌΠΎΠΆΠ½ΠΎ ΠΎΡ
Π»Π°ΠΆΠ΄Π΅Π½ΠΈΠ΅ ΠΊΠΎΠ½ΡΠ°ΠΊΡΠ° ΠΌΠ΅ΡΠ°Π»Π»-ΠΏΠΎΠ»ΡΠΏΡΠΎΠ²ΠΎΠ΄Π½ΠΈΠΊ, Π½Π°Ρ
ΠΎΠ΄ΡΡΠ΅Π³ΠΎΡΡ ΠΏΠΎΠ΄ ΠΎΡΡΠΈΡΠ°ΡΠ΅Π»ΡΠ½ΡΠΌ ΡΠ»Π΅ΠΊΡΡΠΈΡΠ΅ΡΠΊΠΈΠΌ ΠΏΠΎΡΠ΅Π½ΡΠΈΠ°Π»ΠΎΠΌ, ΠΈ Π½Π°Π³ΡΠ΅Π²Π°Π½ΠΈΠ΅ ΠΏΡΠΎΡΠΈΠ²ΠΎΠΏΠΎΠ»ΠΎΠΆΠ½ΠΎΠ³ΠΎ ΠΊΠΎΠ½ΡΠ°ΠΊΡΠ°, ΠΏΠΎΠ΄ ΠΏΠΎΠ»ΠΎΠΆΠΈΡΠ΅Π»ΡΠ½ΡΠΌ ΠΏΠΎΡΠ΅Π½ΡΠΈΠ°Π»ΠΎΠΌ
Inductive Type Impedance of Mo/n-Si Barrier Structures Irradiated with Alpha Particles
In silicon microelectronics, flat metal spirals are formed to create an integrated inductance. However, the maximum specific inductance of such spirals at low frequencies is limited to a value of the order of tens of microhenries per square centimeter. Gyrators, devices based on operational amplifiers with approximately the same specific inductance as spirals, are also used. Despite the fact that such solutions have been introduced into the production of integrated circuits, the task of searching for new elements with high values of specific inductance is relevant. An alternative to coils and gyrators can be the effect of negative differential capacitance (i.e., inductive type impedance), which is observed in barrier structures based on silicon. The purpose of the work is to study the low-frequency impedance of Schottky diodes (Mo/n-Si) containing defects induced by Ξ±-particles irradiation and determination of the parameters of these defects by methods of low-frequency impedance spectroscopy and DLTS (Deep Level Transient Spectroscopy). Unpackaged Schottky diodes Mo/n-Si (epitaxial layer of 5.5 ΞΌm thickness and resistivity of 1 Ohmβcm) produced by JSC βIntegralβ are studied. Inductance measurements were carried out on the as manufactured diodes and on the diodes irradiated with alpha particles (the maximum kinetic energy of an Ξ±- particle is 5.147 MeV). The impedance of inductive type of the Schottky diodes at the corresponding DC forward current of 10 ΞΌA were measured in the AC frequency range from 20 Hz to 2 MHz. DLTS spectra were used to determine the parameters of radiation-induced defects. It is shown that irradiation of diodes with alpha particles produces three types of radiation-induced defects: A-centers with thermal activation energy of E1 β 190 meV, divacancies with activation energies of E2 β 230 meV and E3 β 410 meV, and Ecenters with activation energy of E4 β 440 meV measured relative to the bottom of c-band of silicon
ΠΠΌΠΏΠ΅Π΄Π°Π½Ρ ΠΈΠ½Π΄ΡΠΊΡΠΈΠ²Π½ΠΎΠ³ΠΎ ΡΠΈΠΏΠ° Π±Π°ΡΡΠ΅ΡΠ½ΡΡ ΡΡΡΡΠΊΡΡΡ Mo/n-Si, ΠΎΠ±Π»ΡΡΡΠ½Π½ΡΡ Π°Π»ΡΡΠ°-ΡΠ°ΡΡΠΈΡΠ°ΠΌΠΈ
In silicon microelectronics, flat metal spirals are formed to create an integrated inductance. However, the maximum specific inductance of such spirals at low frequencies is limited to a value of the order of tens of microhenries per square centimeter. Gyrators, devices based on operational amplifiers with approximately the same specific inductance as spirals, are also used. Despite the fact that such solutions have been introduced into the production of integrated circuits, the task of searching for new elements with high values of specific inductance is relevant. An alternative to coils and gyrators can be the effect of negative differential capacitance (i.e., inductive type impedance), which is observed in barrier structures based on silicon.The purpose of the work is to study the low-frequency impedance of Schottky diodes (Mo/n-Si) containing defects induced by Ξ±-particles irradiation and determination of the parameters of these defects by methods of low-frequency impedance spectroscopy and DLTS (Deep Level Transient Spectroscopy).Unpackaged Schottky diodes Mo/n-Si (epitaxial layer of 5.5 ΞΌm thickness and resistivity of 1 Ohmβcm) produced by JSC βIntegralβ are studied. Inductance measurements were carried out on the as manufactured diodes and on the diodes irradiated with alpha particles (the maximum kinetic energy of an Ξ±particle is 5.147 MeV). The impedance of inductive type of the Schottky diodes at the corresponding DC forward current of 10 Β΅A were measured in the AC frequency range from 20 Hz to 2 MHz. DLTS spectra were used to determine the parameters of radiation-induced defects. It is shown that irradiation of diodes with alpha particles produces three types of radiation-induced defects: A-centers with thermal activation energy of E1Β β 190 meV, divacancies with activation energies of E2Β β 230 meV and E3Β β 410 meV, and Ecenters with activation energy of E4Β β 440 meV measured relative to the bottom of c-band of silicon.Π ΠΊΡΠ΅ΠΌΠ½ΠΈΠ΅Π²ΠΎΠΉ ΠΌΠΈΠΊΡΠΎΡΠ»Π΅ΠΊΡΡΠΎΠ½ΠΈΠΊΠ΅ Π΄Π»Ρ ΡΠΎΠ·Π΄Π°Π½ΠΈΡ ΠΈΠ½ΡΠ΅Π³ΡΠ°Π»ΡΠ½ΠΎΠΉ ΠΈΠ½Π΄ΡΠΊΡΠΈΠ²Π½ΠΎΡΡΠΈ ΡΠΎΡΠΌΠΈΡΡΡΡ ΠΏΠ»ΠΎΡΠΊΠΈΠ΅ ΠΌΠ΅ΡΠ°Π»Π»ΠΈΡΠ΅ΡΠΊΠΈΠ΅ ΡΠΏΠΈΡΠ°Π»ΠΈ. ΠΠ΄Π½Π°ΠΊΠΎ ΠΌΠ°ΠΊΡΠΈΠΌΠ°Π»ΡΠ½Π°Ρ ΡΠ΄Π΅Π»ΡΠ½Π°Ρ ΠΈΠ½Π΄ΡΠΊΡΠΈΠ²Π½ΠΎΡΡΡ ΡΠ°ΠΊΠΈΡ
ΡΠΏΠΈΡΠ°Π»Π΅ΠΉ Π½Π° Π½ΠΈΠ·ΠΊΠΈΡ
ΡΠ°ΡΡΠΎΡΠ°Ρ
ΠΎΠ³ΡΠ°Π½ΠΈΡΠ΅Π½Π° Π·Π½Π°ΡΠ΅Π½ΠΈΠ΅ΠΌ ΠΏΠΎΡΡΠ΄ΠΊΠ° Π΄Π΅ΡΡΡΠΊΠΎΠ² ΠΌΠΈΠΊΡΠΎΠ³Π΅Π½ΡΠΈ Π½Π° ΠΊΠ²Π°Π΄ΡΠ°ΡΠ½ΡΠΉ ΡΠ°Π½ΡΠΈΠΌΠ΅ΡΡ. ΠΡΠΏΠΎΠ»ΡΠ·ΡΡΡΡΡ ΡΠ°ΠΊΠΆΠ΅ Π³ΠΈΡΠ°ΡΠΎΡΡ β ΡΡΡΡΠΎΠΉΡΡΠ²Π° Π½Π° ΠΎΡΠ½ΠΎΠ²Π΅ ΠΎΠΏΠ΅ΡΠ°ΡΠΈΠΎΠ½Π½ΡΡ
ΡΡΠΈΠ»ΠΈΡΠ΅Π»Π΅ΠΉ, ΠΏΡΠΈΠΌΠ΅ΡΠ½ΠΎ Ρ ΡΠ°ΠΊΠΎΠΉ ΠΆΠ΅ ΡΠ΄Π΅Π»ΡΠ½ΠΎΠΉ ΠΈΠ½Π΄ΡΠΊΡΠΈΠ²Π½ΠΎΡΡΡΡ, ΠΊΠ°ΠΊ ΠΈ ΡΠΏΠΈΡΠ°Π»ΠΈ. ΠΠ΅ΡΠΌΠΎΡΡΡ Π½Π° ΡΠΎ, ΡΡΠΎ ΡΠ°ΠΊΠΈΠ΅ ΡΠ΅ΡΠ΅Π½ΠΈΡ Π²Π½Π΅Π΄ΡΠ΅Π½Ρ Π² ΠΏΡΠΎΠΈΠ·Π²ΠΎΠ΄ΡΡΠ²ΠΎ ΠΈΠ½ΡΠ΅Π³ΡΠ°Π»ΡΠ½ΡΡ
ΠΌΠΈΠΊΡΠΎΡΡ
Π΅ΠΌ, Π°ΠΊΡΡΠ°Π»ΡΠ½ΠΎΠΉ ΡΠ²Π»ΡΠ΅ΡΡΡ Π·Π°Π΄Π°ΡΠ° ΠΏΠΎΠΈΡΠΊΠ° Π½ΠΎΠ²ΡΡ
ΡΠ»Π΅ΠΌΠ΅Π½ΡΠΎΠ² Ρ Π±ΠΎΠ»ΡΡΠΈΠΌΠΈ Π·Π½Π°ΡΠ΅Π½ΠΈΡΠΌΠΈ ΡΠ΄Π΅Π»ΡΠ½ΠΎΠΉ ΠΈΠ½Π΄ΡΠΊΡΠΈΠ²Π½ΠΎΡΡΠΈ. ΠΠ»ΡΡΠ΅ΡΠ½Π°ΡΠΈΠ²ΠΎΠΉ ΡΠΏΠΈΡΠ°Π»ΡΠΌ ΠΈ Π³ΠΈΡΠ°ΡΠΎΡΠ°ΠΌ ΠΌΠΎΠΆΠ΅Ρ ΡΡΠ°ΡΡ ΡΡΡΠ΅ΠΊΡ ΠΎΡΡΠΈΡΠ°ΡΠ΅Π»ΡΠ½ΠΎΠΉ Π΄ΠΈΡΡΠ΅ΡΠ΅Π½ΡΠΈΠ°Π»ΡΠ½ΠΎΠΉ ΡΠΌΠΊΠΎΡΡΠΈ (Ρ. Π΅. ΠΈΠΌΠΏΠ΅Π΄Π°Π½ΡΠ° ΠΈΠ½Π΄ΡΠΊΡΠΈΠ²Π½ΠΎΠ³ΠΎ ΡΠΈΠΏΠ°), Π½Π°Π±Π»ΡΠ΄Π°Π΅ΠΌΡΠΉ Π² Π±Π°ΡΡΠ΅ΡΠ½ΡΡ
ΡΡΡΡΠΊΡΡΡΠ°Ρ
Π½Π° ΠΊΡΠ΅ΠΌΠ½ΠΈΠΈ.Π¦Π΅Π»Ρ ΡΠ°Π±ΠΎΡΡ β ΠΈΡΡΠ»Π΅Π΄ΠΎΠ²Π°Π½ΠΈΠ΅ Π½ΠΈΠ·ΠΊΠΎΡΠ°ΡΡΠΎΡΠ½ΠΎΠ³ΠΎ ΠΈΠΌΠΏΠ΅Π΄Π°Π½ΡΠ° Π΄ΠΈΠΎΠ΄ΠΎΠ² Π¨ΠΎΡΡΠΊΠΈ (Mo/n-Si), ΡΠΎΠ΄Π΅ΡΠΆΠ°ΡΠΈΡ
ΡΠ°Π΄ΠΈΠ°ΡΠΈΠΎΠ½Π½ΡΠ΅ Π΄Π΅ΡΠ΅ΠΊΡΡ, ΡΠΎΠ·Π΄Π°Π²Π°Π΅ΠΌΡΠ΅ Ξ±-ΡΠ°ΡΡΠΈΡΠ°ΠΌΠΈ, ΠΈ ΠΎΠΏΡΠ΅Π΄Π΅Π»Π΅Π½ΠΈΠ΅ ΠΏΠ°ΡΠ°ΠΌΠ΅ΡΡΠΎΠ² ΡΡΠΈΡ
Π΄Π΅ΡΠ΅ΠΊΡΠΎΠ² ΠΌΠ΅ΡΠΎΠ΄Π°ΠΌΠΈ Π½ΠΈΠ·ΠΊΠΎΡΠ°ΡΡΠΎΡΠ½ΠΎΠΉ ΠΈΠΌΠΏΠ΅Π΄Π°Π½ΡΠ½ΠΎΠΉ ΡΠΏΠ΅ΠΊΡΡΠΎΡΠΊΠΎΠΏΠΈΠΈ ΠΈ ΡΠΏΠ΅ΠΊΡΡΠΎΡΠΊΠΎΠΏΠΈΠΈ DLTS (Deep Level Transient Spectroscopy).ΠΡΡΠ»Π΅Π΄ΠΎΠ²Π°Π½Ρ Π±Π΅ΡΠΊΠΎΡΠΏΡΡΠ½ΡΠ΅ Π΄ΠΈΠΎΠ΄Ρ Π¨ΠΎΡΡΠΊΠΈ 5.5ΠΠΠ€-1 (Mo/n-Si) ΠΏΡΠΎΠΈΠ·Π²ΠΎΠ΄ΡΡΠ²Π° ΠΠΠ Β«ΠΠ½ΡΠ΅Π³ΡΠ°Π»Β». ΠΠ·ΠΌΠ΅ΡΠ΅Π½ΠΈΡ ΠΈΠ½Π΄ΡΠΊΡΠΈΠ²Π½ΠΎΡΡΠΈ ΠΏΡΠΎΠ²ΠΎΠ΄ΠΈΠ»ΠΈΡΡ Π½Π° ΠΈΡΡ
ΠΎΠ΄Π½ΡΡ
Π΄ΠΈΠΎΠ΄Π°Ρ
ΠΈ Π½Π° Π΄ΠΈΠΎΠ΄Π°Ρ
, ΠΎΠ±Π»ΡΡΡΠ½Π½ΡΡ
Π°Π»ΡΡΠ°-ΡΠ°ΡΡΠΈΡΠ°ΠΌΠΈ (ΠΌΠ°ΠΊΡΠΈΠΌΠ°Π»ΡΠ½Π°Ρ ΠΊΠΈΠ½Π΅ΡΠΈΡΠ΅ΡΠΊΠ°Ρ ΡΠ½Π΅ΡΠ³ΠΈΡ Ξ±-ΡΠ°ΡΡΠΈΡΡ 5.147 ΠΡΠ). Π ΠΈΠ½ΡΠ΅ΡΠ²Π°Π»Π΅ ΡΠ°ΡΡΠΎΡ ΠΏΠ΅ΡΠ΅ΠΌΠ΅Π½Π½ΠΎΠ³ΠΎ ΡΠΎΠΊΠ° ΠΎΡ 20 ΠΡ Π΄ΠΎ 2 ΠΠΡ ΠΈΠ·ΠΌΠ΅ΡΠ΅Π½ ΠΈΠΌΠΏΠ΅Π΄Π°Π½Ρ ΠΈΠ½Π΄ΡΠΊΡΠΈΠ²Π½ΠΎΠ³ΠΎ ΡΠΈΠΏΠ° Π΄ΠΈΠΎΠ΄ΠΎΠ² ΠΏΡΠΈ ΠΏΠΎΡΡΠΎΡΠ½Π½ΠΎΠΌ ΠΏΡΡΠΌΠΎΠΌ ΡΠΎΠΊΠ΅ 10 ΠΌΠΊΠ. ΠΠ»Ρ ΠΎΠΏΡΠ΅Π΄Π΅Π»Π΅Π½ΠΈΡ ΠΏΠ°ΡΠ°ΠΌΠ΅ΡΡΠΎΠ² ΡΠ°Π΄ΠΈΠ°ΡΠΈΠΎΠ½Π½ΡΡ
Π΄Π΅ΡΠ΅ΠΊΡΠΎΠ² ΠΈΠ·ΠΌΠ΅ΡΡΠ»ΠΈΡΡ ΡΠΏΠ΅ΠΊΡΡΡ DLTS. ΠΠΎΠΊΠ°Π·Π°Π½ΠΎ, ΡΡΠΎ ΠΏΡΠΈ ΠΎΠ±Π»ΡΡΠ΅Π½ΠΈΠΈ Π΄ΠΈΠΎΠ΄ΠΎΠ² Π¨ΠΎΡΡΠΊΠΈ Π°Π»ΡΡΠ°-ΡΠ°ΡΡΠΈΡΠ°ΠΌΠΈ ΠΎΠ±ΡΠ°Π·ΡΠ΅ΡΡΡ ΡΡΠΈ ΡΠΈΠΏΠ° ΡΠ°Π΄ΠΈΠ°ΡΠΈΠΎΠ½Π½ΡΡ
Π΄Π΅ΡΠ΅ΠΊΡΠΎΠ²: A-ΡΠ΅Π½ΡΡΡ Ρ ΡΠ½Π΅ΡΠ³ΠΈΠ΅ΠΉ ΡΠ΅ΡΠΌΠΈΡΠ΅ΡΠΊΠΎΠΉ Π°ΠΊΡΠΈΠ²Π°ΡΠΈΠΈ E1Β β 190 ΠΌΡΠ, Π΄ΠΈΠ²Π°ΠΊΠ°Π½ΡΠΈΠΈ Ρ ΡΠ½Π΅ΡΠ³ΠΈΡΠΌΠΈ Π°ΠΊΡΠΈΠ²Π°ΡΠΈΠΈ E2Β β 230 ΠΌΡΠ ΠΈ E3Β β 410 ΠΌΡΠ ΠΈ E-ΡΠ΅Π½ΡΡΡ Ρ ΡΠ½Π΅ΡΠ³ΠΈΠ΅ΠΉ Π°ΠΊΡΠΈΠ²Π°ΡΠΈΠΈ E4Β β 440 ΠΌΡΠ, ΠΎΡΡΡΠΈΡΠ°Π½Π½ΡΠ΅ ΠΎΡ Π΄Π½Π° c-Π·ΠΎΠ½Ρ ΠΊΡΠ΅ΠΌΠ½ΠΈΡ
Spin dependent point potentials in one and three dimensions
We consider a system realized with one spinless quantum particle and an array
of spins 1/2 in dimension one and three. We characterize all the
Hamiltonians obtained as point perturbations of an assigned free dynamics in
terms of some ``generalized boundary conditions''. For every boundary condition
we give the explicit formula for the resolvent of the corresponding
Hamiltonian. We discuss the problem of locality and give two examples of spin
dependent point potentials that could be of interest as multi-component
solvable models.Comment: 15 pages, some misprints corrected, one example added, some
references modified or adde
Π ΠΠ‘Π§ΠΠ’ Π‘Π’ΠΠ’ΠΠ§ΠΠ‘ΠΠΠ₯ ΠΠΠ ΠΠΠΠ’Π ΠΠ ΠΠ ΠΠΠΠΠΠΠΠΠ ΠΠΠΠΠ, Π‘ΠΠΠΠ ΠΠΠ©ΠΠΠ Π Π‘ΠΠΠΠΠ’Π ΠΠ§ΠΠΠ pβn-ΠΠΠ ΠΠ₯ΠΠΠ Ξ΄-Π‘ΠΠΠ Π’ΠΠ§ΠΠ§ΠΠ«Π₯ Π’Π ΠΠ₯ΠΠΠ Π―ΠΠΠ«Π₯ ΠΠΠ€ΠΠΠ’ΠΠ
The study of semiconductor materials and devices containing a narrow layer of impurity atoms and/or intrinsic point defects of the crystal lattice is of fundamental and practical interest. The aim of the study is to calculate the electric parameters of a symmetric silicon diode, in the flat pβn-junction of which a Ξ΄-layer of point triple-charged t-defects is formed. Such a diode is called pβtβn-diode, similarly to pβiβn-diode.Each t-defect can be in one of the three charge states (β1, 0, and +1; in the units of the elementary charge). It is assumed that at room temperature all hydrogen-like acceptors in p-region and hydrogen-like donors in n-region are ionized. It was assumed that the cross-section for v-band hole capture on t-defects is greater than the cross-section for c-band electron capture on t-defects.The system of stationary nonlinear differential equations, which describe in the drift-diffusion approximation a migration of electrons and holes in semiconductors, is solved numerically. The static capacityvoltage and current-voltage characteristics of the silicon diode with nondegenerate regions of pand n-type of electrical conductivity are calculated for forward and reverse electric bias voltage.It is shown by calculation that in the pβtβn-diode containing the Ξ΄-layer of t-defects, at the forward bias a region of current density stabilization occurs. At the reverse bias the current density in such a diode is much greater than the one in a pβn-diode without t-defects. With the reverse bias the capacitance of the pβtβn-diode, in contrast to the pβn-diode, increases at first and then decreases.ΠΠ°ΡΡΠ½ΡΠΉ ΠΈ ΠΏΡΠ°ΠΊΡΠΈΡΠ΅ΡΠΊΠΈΠΉ ΠΈΠ½ΡΠ΅ΡΠ΅Ρ ΠΏΡΠ΅Π΄ΡΡΠ°Π²Π»ΡΠ΅Ρ ΠΈΠ·ΡΡΠ΅Π½ΠΈΠ΅ ΠΏΠΎΠ»ΡΠΏΡΠΎΠ²ΠΎΠ΄Π½ΠΈΠΊΠΎΠ²ΡΡ
ΠΌΠ°ΡΠ΅ΡΠΈΠ°Π»ΠΎΠ² ΠΈ ΠΏΡΠΈΠ±ΠΎΡΠΎΠ² Ρ ΡΠ·ΠΊΠΈΠΌ ΡΠ»ΠΎΠ΅ΠΌ Π°ΡΠΎΠΌΠΎΠ² ΠΏΡΠΈΠΌΠ΅ΡΠ΅ΠΉ ΠΈ/ΠΈΠ»ΠΈ ΡΠΎΠ±ΡΡΠ²Π΅Π½Π½ΡΡ
ΡΠΎΡΠ΅ΡΠ½ΡΡ
Π΄Π΅ΡΠ΅ΠΊΡΠΎΠ² ΠΊΡΠΈΡΡΠ°Π»Π»ΠΈΡΠ΅ΡΠΊΠΎΠΉ ΡΠ΅ΡΠ΅ΡΠΊΠΈ. Π¦Π΅Π»Ρ ΡΠ°Π±ΠΎΡΡ β ΡΠ°ΡΡΡΠΈΡΠ°ΡΡ ΡΠ»Π΅ΠΊΡΡΠΈΡΠ΅ΡΠΊΠΈΠ΅ ΠΏΠ°ΡΠ°ΠΌΠ΅ΡΡΡ ΡΠΈΠΌΠΌΠ΅ΡΡΠΈΡΠ½ΠΎΠ³ΠΎ ΠΊΡΠ΅ΠΌΠ½ΠΈΠ΅Π²ΠΎΠ³ΠΎ Π΄ΠΈΠΎΠ΄Π°, Π² ΠΏΠ»ΠΎΡΠΊΠΎΠΌ pβn-ΠΏΠ΅ΡΠ΅Ρ
ΠΎΠ΄Π΅ ΠΊΠΎΡΠΎΡΠΎΠ³ΠΎ ΡΡΠΎΡΠΌΠΈΡΠΎΠ²Π°Π½ Ξ΄-ΡΠ»ΠΎΠΉ ΡΠΎΡΠ΅ΡΠ½ΡΡ
ΡΡΠ΅Ρ
Π·Π°ΡΡΠ΄Π½ΡΡ
t-Π΄Π΅ΡΠ΅ΠΊΡΠΎΠ². Π’Π°ΠΊΠΎΠΉ Π΄ΠΈΠΎΠ΄ Π½Π°Π·ΡΠ²Π°Π΅ΡΡΡ pβtβn-Π΄ΠΈΠΎΠ΄ΠΎΠΌ, ΠΏΠΎΠ΄ΠΎΠ±Π½ΠΎ pβiβn-Π΄ΠΈΠΎΠ΄Ρ.ΠΠ°ΠΆΠ΄ΡΠΉ t-Π΄Π΅ΡΠ΅ΠΊΡ ΠΌΠΎΠΆΠ΅Ρ Π½Π°Ρ
ΠΎΠ΄ΠΈΡΡΡΡ Π² ΠΎΠ΄Π½ΠΎΠΌ ΠΈΠ· ΡΡΠ΅Ρ
Π·Π°ΡΡΠ΄ΠΎΠ²ΡΡ
ΡΠΎΡΡΠΎΡΠ½ΠΈΠΉ (β1, 0, +1; Π² Π΅Π΄ΠΈΠ½ΠΈΡΠ°Ρ
ΡΠ»Π΅ΠΌΠ΅Π½ΡΠ°ΡΠ½ΠΎΠ³ΠΎ Π·Π°ΡΡΠ΄Π°). Π‘ΡΠΈΡΠ°Π΅ΡΡΡ, ΡΡΠΎ ΠΏΡΠΈ ΠΊΠΎΠΌΠ½Π°ΡΠ½ΠΎΠΉ ΡΠ΅ΠΌΠΏΠ΅ΡΠ°ΡΡΡΠ΅ Π²ΡΠ΅ Π²ΠΎΠ΄ΠΎΡΠΎΠ΄ΠΎΠΏΠΎΠ΄ΠΎΠ±Π½ΡΠ΅ Π°ΠΊΡΠ΅ΠΏΡΠΎΡΡ Π² p-ΠΎΠ±Π»Π°ΡΡΠΈ ΠΈ Π²ΠΎΠ΄ΠΎΡΠΎΠ΄ΠΎΠΏΠΎΠ΄ΠΎΠ±Π½ΡΠ΅ Π΄ΠΎΠ½ΠΎΡΡ Π² n-ΠΎΠ±Π»Π°ΡΡΠΈ ΠΈΠΎΠ½ΠΈΠ·ΠΎΠ²Π°Π½Ρ. ΠΡΠΈΠ½ΠΈΠΌΠ°Π»ΠΎΡΡ, ΡΡΠΎ ΡΠ΅ΡΠ΅Π½ΠΈΠ΅ Π·Π°Ρ
Π²Π°ΡΠ° Π΄ΡΡΠΎΠΊ v-Π·ΠΎΠ½Ρ Π½Π° t-Π΄Π΅ΡΠ΅ΠΊΡΡ Π±ΠΎΠ»ΡΡΠ΅ ΡΠ΅ΡΠ΅Π½ΠΈΡ Π·Π°Ρ
Π²Π°ΡΠ° ΡΠ»Π΅ΠΊΡΡΠΎΠ½ΠΎΠ² c-Π·ΠΎΠ½Ρ Π½Π° t-Π΄Π΅ΡΠ΅ΠΊΡΡ.Π§ΠΈΡΠ»Π΅Π½Π½ΠΎ ΡΠ΅ΡΠ΅Π½Π° ΡΠΈΡΡΠ΅ΠΌΠ° cΡΠ°ΡΠΈΠΎΠ½Π°ΡΠ½ΡΡ
Π½Π΅Π»ΠΈΠ½Π΅ΠΉΠ½ΡΡ
Π΄ΠΈΡΡΠ΅ΡΠ΅Π½ΡΠΈΠ°Π»ΡΠ½ΡΡ
ΡΡΠ°Π²Π½Π΅Π½ΠΈΠΉ, ΠΎΠΏΠΈΡΡΠ²Π°ΡΡΠΈΡ
Π² Π΄ΡΠ΅ΠΉΡΠΎΠ²ΠΎ-Π΄ΠΈΡΡΡΠ·ΠΈΠΎΠ½Π½ΠΎΠΌ ΠΏΡΠΈΠ±Π»ΠΈΠΆΠ΅Π½ΠΈΠΈ ΠΌΠΈΠ³ΡΠ°ΡΠΈΡ ΡΠ»Π΅ΠΊΡΡΠΎΠ½ΠΎΠ² ΠΈ Π΄ΡΡΠΎΠΊ Π² ΠΏΠΎΠ»ΡΠΏΡΠΎΠ²ΠΎΠ΄Π½ΠΈΠΊΠ°Ρ
. Π Π°ΡΡΡΠΈΡΠ°Π½Ρ ΡΡΠ°ΡΠΈΡΠ΅ΡΠΊΠΈΠ΅ Π²ΠΎΠ»ΡΡ-ΡΠ°ΡΠ°Π΄Π½ΡΠ΅ ΠΈ Π²ΠΎΠ»ΡΡ-Π°ΠΌΠΏΠ΅ΡΠ½ΡΠ΅ Ρ
Π°ΡΠ°ΠΊΡΠ΅ΡΠΈΡΡΠΈΠΊΠΈ ΠΊΡΠ΅ΠΌΠ½ΠΈΠ΅Π²ΠΎΠ³ΠΎ Π΄ΠΈΠΎΠ΄Π° Ρ Π½Π΅Π²ΡΡΠΎΠΆΠ΄Π΅Π½Π½ΡΠΌΠΈ ΠΎΠ±Π»Π°ΡΡΡΠΌΠΈ p- ΠΈ n-ΡΠΈΠΏΠ° ΡΠ»Π΅ΠΊΡΡΠΎΠΏΡΠΎΠ²ΠΎΠ΄Π½ΠΎΡΡΠΈ ΠΏΡΠΈ ΠΏΡΡΠΌΠΎΠΌ ΠΈ ΠΎΠ±ΡΠ°ΡΠ½ΠΎΠΌ ΡΠ»Π΅ΠΊΡΡΠΈΡΠ΅ΡΠΊΠΎΠΌ Π½Π°ΠΏΡΡΠΆΠ΅Π½ΠΈΠΈ ΡΠΌΠ΅ΡΠ΅Π½ΠΈΡ.Π Π°ΡΡΠ΅ΡΠ½ΡΠΌ ΠΏΡΡΠ΅ΠΌ ΠΏΠΎΠΊΠ°Π·Π°Π½ΠΎ, ΡΡΠΎ Π² pβtβn-Π΄ΠΈΠΎΠ΄Π΅, ΡΠΎΠ΄Π΅ΡΠΆΠ°ΡΠ΅ΠΌ Ξ΄-ΡΠ»ΠΎΠΉ t-Π΄Π΅ΡΠ΅ΠΊΡΠΎΠ², ΠΏΡΠΈ ΠΏΡΡΠΌΠΎΠΌ ΡΠΌΠ΅ΡΠ΅Π½ΠΈΠΈ ΠΈΠΌΠ΅Π΅ΡΡΡ ΡΡΠ°ΡΡΠΎΠΊ ΡΡΠ°Π±ΠΈΠ»ΠΈΠ·Π°ΡΠΈΠΈ ΠΏΠ»ΠΎΡΠ½ΠΎΡΡΠΈ ΡΠΎΠΊΠ°. ΠΡΠΈ ΠΎΠ±ΡΠ°ΡΠ½ΠΎΠΌ ΡΠΌΠ΅ΡΠ΅Π½ΠΈΠΈ ΠΏΠ»ΠΎΡΠ½ΠΎΡΡΡ ΡΠΎΠΊΠ° Π² ΡΠ°ΠΊΠΎΠΌ Π΄ΠΈΠΎΠ΄Π΅ ΠΌΠ½ΠΎΠ³ΠΎ Π±ΠΎΠ»ΡΡΠ΅, ΡΠ΅ΠΌ Π² pβn-Π΄ΠΈΠΎΠ΄Π΅ Π±Π΅Π· t-Π΄Π΅ΡΠ΅ΠΊΡΠΎΠ². ΠΡΠΈ ΡΠ²Π΅Π»ΠΈΡΠ΅Π½ΠΈΠΈ ΠΎΠ±ΡΠ°ΡΠ½ΠΎΠ³ΠΎ ΡΠΌΠ΅ΡΠ΅Π½ΠΈΡ Π΅ΠΌΠΊΠΎΡΡΡ pβtβn-Π΄ΠΈΠΎΠ΄Π°, Π² ΠΎΡΠ»ΠΈΡΠΈΠ΅ ΠΎΡ pβn-Π΄ΠΈΠΎΠ΄Π°, Π²Π½Π°ΡΠ°Π»Π΅ ΡΠ²Π΅Π»ΠΈΡΠΈΠ²Π°Π΅ΡΡΡ, Π° Π·Π°ΡΠ΅ΠΌ ΡΠΌΠ΅Π½ΡΡΠ°Π΅ΡΡΡ
ΠΠΎΠ½ΡΡΠΎΠ»Ρ Π΄ΠΈΡΡΠ΅ΡΠ΅Π½ΡΠΈΠ°Π»ΡΠ½ΠΎΠ³ΠΎ ΡΠΎΠΏΡΠΎΡΠΈΠ²Π»Π΅Π½ΠΈΡ pβn-ΠΏΠ΅ΡΠ΅Ρ ΠΎΠ΄ΠΎΠ² Π±ΠΈΠΏΠΎΠ»ΡΡΠ½ΠΎΠ³ΠΎ ΡΡΠ°Π½Π·ΠΈΡΡΠΎΡΠ° Π² Π°ΠΊΡΠΈΠ²Π½ΠΎΠΌ ΡΠ΅ΠΆΠΈΠΌΠ΅ ΠΌΠ΅ΡΠΎΠ΄ΠΎΠΌ ΠΈΠΌΠΏΠ΅Π΄Π°Π½ΡΠ½ΠΎΠΉ ΡΠΏΠ΅ΠΊΡΡΠΎΡΠΊΠΎΠΏΠΈΠΈ
Controlling of parameters of manufactured transistors and interoperational controlling during their production are necessary conditions for production of competitive products of electronic industry. Traditionally for controlling of bipolar transistors the direct current measurements and registration of capacity-voltage characteristics are used. Carrying out measurements on alternating current in a wide interval of frequencies (20 Hzβ30 MHz) will allow to obtain additional information on parameters of bipolar transistors. The purpose of the work is to show the possibilities of the method of impedance spectroscopy for controlling of differential resistance ofΒ pβn-junctions of the bipolarΒ pβnβp-transistor in active mode.The KT814GΒ pβnβp-transistor manufactured by JSC βINTEGRALβ was studied by the method of impedance spectroscopy. The values of differential electrical resistance and capacitance for baseβemitter and baseβcollectorΒ pβn-junctions are defi at direct currents in base from 0.8 to 46 Β΅A.The results of the work can be applied to elaboration of techniques of fi checking of discrete bipolar semiconductor devices.ΠΠΎΠ½ΡΡΠΎΠ»Ρ ΠΏΠ°ΡΠ°ΠΌΠ΅ΡΡΠΎΠ² Π³ΠΎΡΠΎΠ²ΡΡ
ΡΡΠ°Π½Π·ΠΈΡΡΠΎΡΠΎΠ² ΠΈ ΠΌΠ΅ΠΆΠΎΠΏΠ΅ΡΠ°ΡΠΈΠΎΠ½Π½ΡΠΉ ΠΊΠΎΠ½ΡΡΠΎΠ»Ρ ΠΏΡΠΈ ΠΈΡ
ΠΈΠ·Π³ΠΎΡΠΎΠ²Π»Π΅Π½ΠΈΠΈ ΡΠ²Π»ΡΡΡΡΡ Π½Π΅ΠΎΠ±Ρ
ΠΎΠ΄ΠΈΠΌΡΠΌΠΈ ΡΡΠ»ΠΎΠ²ΠΈΡ Π²ΡΠΏΡΡΠΊΠ° ΠΊΠΎΠ½ΠΊΡΡΠ΅Π½ΡΠΎΡΠΏΠΎΡΠΎΠ±Π½ΡΡ
ΠΈΠ·Π΄Π΅Π»ΠΈΠΉ ΡΠ»Π΅ΠΊΡΡΠΎΠ½Π½ΠΎΠΉ ΠΏΡΠΎΠΌΡΡΠ»Π΅Π½Π½ΠΎΡΡΠΈ. Π’ΡΠ°Π΄ΠΈΡΠΈΠΎΠ½Π½ΠΎ Π΄Π»Ρ ΠΊΠΎΠ½ΡΡΠΎΠ»Ρ Π±ΠΈΠΏΠΎΠ»ΡΡΠ½ΡΡ
ΡΡΠ°Π½Π·ΠΈΡΡΠΎΡΠΎΠ² ΠΈΡΠΏΠΎΠ»ΡΠ·ΡΡΡΡΡ ΠΈΠ·ΠΌΠ΅ΡΠ΅Π½ΠΈΡ Π½Π° ΠΏΠΎΡΡΠΎΡΠ½Π½ΠΎΠΌ ΡΠΎΠΊΠ΅ ΠΈ ΡΠ΅Π³ΠΈΡΡΡΠ°ΡΠΈΡ Π²ΠΎΠ»ΡΡ-ΡΠ°ΡΠ°Π΄Π½ΡΡ
Ρ
Π°ΡΠ°ΠΊΡΠ΅ΡΠΈΡΡΠΈΠΊ. ΠΡΠΎΠ²Π΅Π΄Π΅Π½ΠΈΠ΅ ΠΈΠ·ΠΌΠ΅ΡΠ΅Π½ΠΈΠΉ Π½Π° ΠΏΠ΅ΡΠ΅ΠΌΠ΅Π½Π½ΠΎΠΌ ΡΠΎΠΊΠ΅ ΠΏΠΎΠ·Π²ΠΎΠ»ΠΈΡ ΠΏΠΎΠ»ΡΡΠΈΡΡ Π΄ΠΎΠΏΠΎΠ»Π½ΠΈΡΠ΅Π»ΡΠ½ΡΡ ΠΈΠ½ΡΠΎΡΠΌΠ°ΡΠΈΡ ΠΎ ΠΏΠ°ΡΠ°ΠΌΠ΅ΡΡΠ°Ρ
Π±ΠΈΠΏΠΎΠ»ΡΡΠ½ΡΡ
ΡΡΠ°Π½Π·ΠΈΡΡΠΎΡΠΎΠ².Π¦Π΅Π»Ρ ΡΠ°Π±ΠΎΡΡΒ βΒ ΠΏΠΎΠΊΠ°Π·Π°ΡΡ Π²ΠΎΠ·ΠΌΠΎΠΆΠ½ΠΎΡΡΠΈ ΠΌΠ΅ΡΠΎΠ΄Π° ΠΈΠΌΠΏΠ΅Π΄Π°Π½ΡΠ½ΠΎΠΉ ΡΠΏΠ΅ΠΊΡΡΠΎΡΠΊΠΎΠΏΠΈΠΈ Π΄Π»Ρ ΠΊΠΎΠ½ΡΡΠΎΠ»Ρ Π΄ΠΈΡΡΠ΅ΡΠ΅Π½ΡΠΈΠ°Π»ΡΠ½ΠΎΠ³ΠΎ ΡΠ»Π΅ΠΊΡΡΠΈΡΠ΅ΡΠΊΠΎΠ³ΠΎ ΡΠΎΠΏΡΠΎΡΠΈΠ²Π»Π΅Π½ΠΈΡΒ pβn-ΠΏΠ΅ΡΠ΅Ρ
ΠΎΠ΄ΠΎΠ² Π±ΠΈΠΏΠΎΠ»ΡΡΠ½ΠΎΠ³ΠΎΒ pβnβp-ΡΡΠ°Π½Π·ΠΈΡΡΠΎΡΠ° Π² Π°ΠΊΡΠΈΠ²Π½ΠΎΠΌ ΡΠ΅ΠΆΠΈΠΌΠ΅.ΠΠ΅ΡΠΎΠ΄ΠΎΠΌ ΠΈΠΌΠΏΠ΅Π΄Π°Π½ΡΠ½ΠΎΠΉ ΡΠΏΠ΅ΠΊΡΡΠΎΡΠΊΠΎΠΏΠΈΠΈ ΠΈΡΡΠ»Π΅Π΄ΠΎΠ²Π°Π½Β pβnβp-ΡΡΠ°Π½Π·ΠΈΡΡΠΎΡ ΠΠ’814Π ΠΏΡΠΎΠΈΠ·Π²ΠΎΠ΄ΡΡΠ²Π° ΠΠΠ Β«ΠΠΠ’ΠΠΠ ΠΠΒ». ΠΠ° ΠΏΠ΅ΡΠ΅ΠΌΠ΅Π½Π½ΠΎΠΌ ΡΠΎΠΊΠ΅ Π² ΠΈΠ½ΡΠ΅ΡΠ²Π°Π»Π΅ ΡΠ°ΡΡΠΎΡ 20 Hzβ30 MHz ΠΎΠΏΡΠ΅Π΄Π΅Π»Π΅Π½Ρ Π·Π½Π°ΡΠ΅Π½ΠΈΡ Π΄ΠΈΡΡΠ΅ΡΠ΅Π½ΡΠΈΠ°Π»ΡΠ½ΠΎΠ³ΠΎ ΡΠ»Π΅ΠΊΡΡΠΈΡΠ΅ΡΠΊΠΎΠ³ΠΎ ΡΠΎΠΏΡΠΎΡΠΈΠ²Π»Π΅Π½ΠΈΡ ΠΈ Π΅ΠΌΠΊΠΎΡΡΠΈΒ pβn-ΠΏΠ΅ΡΠ΅Ρ
ΠΎΠ΄ΠΎΠ² Π±Π°Π·Π°βΡΠΌΠΈΡΡΠ΅ΡΠ° ΠΈ Π±Π°Π·Π°βΠΊΠΎΠ»Π»Π΅ΠΊΡΠΎΡΠ° ΠΏΡΠΈ ΠΏΠΎΡΡΠΎΡΠ½Π½ΡΡ
ΡΠΎΠΊΠ°Ρ
Π±Π°Π·Ρ ΠΎΡ 0,8 Π΄ΠΎ 46 Β΅A.Π Π΅Π·ΡΠ»ΡΡΠ°ΡΡ ΡΠ°Π±ΠΎΡΡ ΠΌΠΎΠ³ΡΡ Π±ΡΡΡ ΠΈΡΠΏΠΎΠ»ΡΠ·ΠΎΠ²Π°Π½Ρ ΠΏΡΠΈ ΠΎΡΡΠ°Π±ΠΎΡΠΊΠ΅ ΠΌΠ΅ΡΠΎΠ΄ΠΈΠΊ Π²ΡΡ
ΠΎΠ΄Π½ΠΎΠ³ΠΎ ΠΊΠΎΠ½ΡΡΠΎΠ»Ρ Π΄ΠΈΡΠΊΡΠ΅ΡΠ½ΡΡ
Π±ΠΈΠΏΠΎΠ»ΡΡΠ½ΡΡ
ΠΏΠΎΠ»ΡΠΏΡΠΎΠ²ΠΎΠ΄Π½ΠΈΠΊΠΎΠ²ΡΡ
ΠΏΡΠΈΠ±ΠΎΡΠΎΠ²
Boundary relations and generalized resolvents of symmetric operators
The Kre\u{\i}n-Naimark formula provides a parametrization of all selfadjoint
exit space extensions of a, not necessarily densely defined, symmetric
operator, in terms of maximal dissipative (in \dC_+) holomorphic linear
relations on the parameter space (the so-called Nevanlinna families). The new
notion of a boundary relation makes it possible to interpret these parameter
families as Weyl families of boundary relations and to establish a simple
coupling method to construct the generalized resolvents from the given
parameter family. The general version of the coupling method is introduced and
the role of boundary relations and their Weyl families for the
Kre\u{\i}n-Naimark formula is investigated and explained.Comment: 47 page
ΠΠ»ΠΈΡΠ½ΠΈΠ΅ ΡΠΊΡΡΡΠ°ΠΊΡΠΈΠΈ Π΄ΡΡΠΎΠΊ ΠΈΠ· Π±Π°Π·ΠΎΠ²ΠΎΠΉ ΠΎΠ±Π»Π°ΡΡΠΈ ΠΊΡΠ΅ΠΌΠ½ΠΈΠ΅Π²ΠΎΠ³ΠΎ pβnβp-ΡΡΠ°Π½Π·ΠΈΡΡΠΎΡΠ° Π½Π° Π΅Π³ΠΎ ΡΠ΅Π°ΠΊΡΠΈΠ²Π½ΡΠΉ ΠΈΠΌΠΏΠ΅Π΄Π°Π½Ρ
Transistor structures are the basic elements of integrated circuitry and are often used to create not only transistors themselves, but also diodes, resistors, and capacitors. Determining the mechanism of the occurrence of inductive type impedance in semiconductor structures is an urgent task, the solution of which will create the prerequisites for the development of solid-state analogs of inductors. The purpose of the work is to establish the effect of extraction of non-equilibrium charge carriers from the base region on the reactive impedance of a bipolarΒ pβnβpΒ transistor.Using impedance spectroscopy in the frequency range 20 Hzβ30 MHz, the structures based onΒ pβnβpΒ transistors KT814G manufactured by JSC βINTEGRALβ were studied. It is shown that in the transistor structures it is possible to observe the βeffect of negative capacitanceβ (inductive type impedance). It is established that the most probable cause of the inductive type impedance is the accumulation of uncompensated charge of holes in the base, the value of inductive impedance is influenced by both the injection efficiency in the baseβemitter junction and the extraction efficiency in the baseβcollector junction.The results can be applied in the elaboration of technologies for the formation of elements of silicon based integrated circuits with an impedance of inductive type.Π’ΡΠ°Π½Π·ΠΈΡΡΠΎΡΠ½ΡΠ΅ ΡΡΡΡΠΊΡΡΡΡ ΡΠ²Π»ΡΡΡΡΡ Π±Π°Π·ΠΎΠ²ΡΠΌΠΈ ΡΠ»Π΅ΠΌΠ΅Π½ΡΠ°ΠΌΠΈ ΠΈΠ½ΡΠ΅Π³ΡΠ°Π»ΡΠ½ΠΎΠΉ ΡΡ
Π΅ΠΌΠΎΡΠ΅Ρ
Π½ΠΈΠΊΠΈ ΠΈ ΡΠ°ΡΡΠΎ ΠΈΡΠΏΠΎΠ»ΡΠ·ΡΡΡΡΡ Π΄Π»Ρ ΡΠΎΠ·Π΄Π°Π½ΠΈΡ Π½Π΅ ΡΠΎΠ»ΡΠΊΠΎ ΡΠΎΠ±ΡΡΠ²Π΅Π½Π½ΠΎ ΡΡΠ°Π½Π·ΠΈΡΡΠΎΡΠΎΠ², Π½ΠΎ ΠΈ Π΄ΠΈΠΎΠ΄ΠΎΠ², ΡΠ΅Π·ΠΈΡΡΠΎΡΠΎΠ², ΠΊΠΎΠ½Π΄Π΅Π½ΡΠ°ΡΠΎΡΠΎΠ². ΠΠΏΡΠ΅Π΄Π΅Π»Π΅Π½ΠΈΠ΅ ΠΌΠ΅Ρ
Π°Π½ΠΈΠ·ΠΌΠ° Π²ΠΎΠ·Π½ΠΈΠΊΠ½ΠΎΠ²Π΅Π½ΠΈΡ ΠΈΠΌΠΏΠ΅Π΄Π°Π½ΡΠ° ΠΈΠ½Π΄ΡΠΊΡΠΈΠ²Π½ΠΎΠ³ΠΎ ΡΠΈΠΏΠ° Π² ΠΏΠΎΠ»ΡΠΏΡΠΎΠ²ΠΎΠ΄Π½ΠΈΠΊΠΎΠ²ΡΡ
ΡΡΡΡΠΊΡΡΡΠ°Ρ
ΡΠ²Π»ΡΠ΅ΡΡΡ Π°ΠΊΡΡΠ°Π»ΡΠ½ΠΎΠΉ Π·Π°Π΄Π°ΡΠ΅ΠΉ, ΡΠ΅ΡΠ΅Π½ΠΈΠ΅ ΠΊΠΎΡΠΎΡΠΎΠΉ ΡΠΎΠ·Π΄Π°ΡΡ ΠΏΡΠ΅Π΄ΠΏΠΎΡΡΠ»ΠΊΠΈ ΠΊ ΡΠ°Π·ΡΠ°Π±ΠΎΡΠΊΠ΅ ΡΠ²Π΅ΡΠ΄ΠΎΡΠ΅Π»ΡΠ½ΡΡ
Π°Π½Π°Π»ΠΎΠ³ΠΎΠ² ΠΊΠ°ΡΡΡΠ΅ΠΊ ΠΈΠ½Π΄ΡΠΊΡΠΈΠ²Π½ΠΎΡΡΠΈ. Π¦Π΅Π»Ρ ΡΠ°Π±ΠΎΡΡ β ΡΡΡΠ°Π½ΠΎΠ²ΠΈΡΡ Π²Π»ΠΈΡΠ½ΠΈΠ΅ ΡΠΊΡΡΡΠ°ΠΊΡΠΈΠΈ Π½Π΅ΡΠ°Π²Π½ΠΎΠ²Π΅ΡΠ½ΡΡ
Π½ΠΎΡΠΈΡΠ΅Π»Π΅ΠΉ Π·Π°ΡΡΠ΄Π° ΠΈΠ· Π±Π°Π·ΠΎΠ²ΠΎΠΉ ΠΎΠ±Π»Π°ΡΡΠΈ Π½Π° ΡΠ΅Π°ΠΊΡΠΈΠ²Π½ΡΠΉ ΠΈΠΌΠΏΠ΅Π΄Π°Π½Ρ Π±ΠΈΠΏΠΎΠ»ΡΡΠ½ΠΎΠ³ΠΎΒ pβnβp-ΡΡΠ°Π½Π·ΠΈΡΡΠΎΡΠ°.ΠΠ΅ΡΠΎΠ΄ΠΎΠΌ ΠΈΠΌΠΏΠ΅Π΄Π°Π½ΡΠ½ΠΎΠΉ ΡΠΏΠ΅ΠΊΡΡΠΎΡΠΊΠΎΠΏΠΈΠΈ Π² ΠΈΠ½ΡΠ΅ΡΠ²Π°Π»Π΅ ΡΠ°ΡΡΠΎΡ 20 Hzβ30 MHz ΠΈΡΡΠ»Π΅Π΄ΠΎΠ²Π°Π½Ρ ΡΡΡΡΠΊΡΡΡΡ Π½Π° Π±Π°Π·Π΅Β pβnβp-ΡΡΠ°Π½Π·ΠΈΡΡΠΎΡΠΎΠ² ΠΠ’814Π ΠΏΡΠΎΠΈΠ·Π²ΠΎΠ΄ΡΡΠ²Π° ΠΠΠ Β«ΠΠΠ’ΠΠΠ ΠΠΒ». ΠΠΎΠΊΠ°Π·Π°Π½ΠΎ, ΡΡΠΎ Π² ΡΡΠ°Π½Π·ΠΈΡΡΠΎΡΠ½ΡΡ
ΡΡΡΡΠΊΡΡΡΠ°Ρ
Π²ΠΎΠ·ΠΌΠΎΠΆΠ½ΠΎ Π½Π°Π±Π»ΡΠ΄Π΅Π½ΠΈΠ΅ Β«ΡΡΡΠ΅ΠΊΡΠ° ΠΎΡΡΠΈΡΠ°ΡΠ΅Π»ΡΠ½ΠΎΠΉ ΡΠΌΠΊΠΎΡΡΠΈΒ» (ΠΈΠΌΠΏΠ΅Π΄Π°Π½Ρ ΠΈΠ½Π΄ΡΠΊΡΠΈΠ²Π½ΠΎΠ³ΠΎ ΡΠΈΠΏΠ°). Π£ΡΡΠ°Π½ΠΎΠ²Π»Π΅Π½ΠΎ, ΡΡΠΎ Π½Π°ΠΈΠ±ΠΎΠ»Π΅Π΅ Π²Π΅ΡΠΎΡΡΠ½ΠΎΠΉ ΠΏΡΠΈΡΠΈΠ½ΠΎΠΉ Π²ΠΎΠ·Π½ΠΈΠΊΠ½ΠΎΠ²Π΅Π½ΠΈΡ ΠΈΠΌΠΏΠ΅Π΄Π°Π½ΡΠ° ΠΈΠ½Π΄ΡΠΊΡΠΈΠ²Π½ΠΎΠ³ΠΎ ΡΠΈΠΏΠ° ΡΠ²Π»ΡΠ΅ΡΡΡ Π½Π°ΠΊΠΎΠΏΠ»Π΅Π½ΠΈΠ΅ Π½Π΅ΡΠΊΠΎΠΌΠΏΠ΅Π½ΡΠΈΡΠΎΠ²Π°Π½Π½ΠΎΠ³ΠΎ Π·Π°ΡΡΠ΄Π° Π΄ΡΡΠΎΠΊ Π² Π±Π°Π·Π΅, Π° Π½Π° Π²Π΅Π»ΠΈΡΠΈΠ½Ρ ΠΈΠ½Π΄ΡΠΊΡΠΈΠ²Π½ΠΎΠ³ΠΎ ΠΈΠΌΠΏΠ΅Π΄Π°Π½ΡΠ° Π²Π»ΠΈΡΠ΅Ρ ΠΊΠ°ΠΊ ΡΡΡΠ΅ΠΊΡΠΈΠ²Π½ΠΎΡΡΡ ΠΈΠ½ΠΆΠ΅ΠΊΡΠΈΠΈ Π² ΠΏΠ΅ΡΠ΅Ρ
ΠΎΠ΄Π΅ Π±Π°Π·Π°βΡΠΌΠΈΡΡΠ΅Ρ, ΡΠ°ΠΊ ΠΈ ΡΡΡΠ΅ΠΊΡΠΈΠ²Π½ΠΎΡΡΡ ΡΠΊΡΡΡΠ°ΠΊΡΠΈΠΈ Π² ΠΏΠ΅ΡΠ΅Ρ
ΠΎΠ΄Π΅ Π±Π°Π·Π°βΠΊΠΎΠ»Π»Π΅ΠΊΡΠΎΡ.Π Π΅Π·ΡΠ»ΡΡΠ°ΡΡ ΡΠ°Π±ΠΎΡΡ ΠΌΠΎΠ³ΡΡ Π±ΡΡΡ ΠΈΡΠΏΠΎΠ»ΡΠ·ΠΎΠ²Π°Π½Ρ ΠΏΡΠΈ ΡΠ°Π·ΡΠ°Π±ΠΎΡΠΊΠ΅ ΡΠ΅Ρ
Π½ΠΎΠ»ΠΎΠ³ΠΈΠΉ ΡΠΎΡΠΌΠΈΡΠΎΠ²Π°Π½ΠΈΡ ΡΠ»Π΅ΠΌΠ΅Π½ΡΠΎΠ² ΠΈΠ½ΡΠ΅Π³ΡΠ°Π»ΡΠ½ΡΡ
ΠΌΠΈΠΊΡΠΎΡΡ
Π΅ΠΌ Π½Π° ΠΎΡΠ½ΠΎΠ²Π΅ ΠΊΡΠ΅ΠΌΠ½ΠΈΡ Ρ ΠΈΠΌΠΏΠ΅Π΄Π°Π½ΡΠΎΠΌ ΠΈΠ½Π΄ΡΠΊΡΠΈΠ²Π½ΠΎΠ³ΠΎ ΡΠΈΠΏΠ°
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