Observation of lattice waves through observation of the photoluminescence Blinking in InGaN Quantum Well devices

The photoluminescence of III-V wide band-gap semiconductors as InGaN is characterized by local intensity fluctuations, known as 'blinking points', that despite decades of research are not yet completely understood. In this letter we report experimental data and a theoretical interpretation that suggests they are caused by the interference of thermal vibrations of the Quantum Well lattice. With far-field optical tests we could observe the lower frequency tail of these interference waves and study their dynamics as they propagate up to distances of several tens of microns.Comment: 4 pages, 4 figure

Elastic properties of the Non-Fermi liquid metal CeRu4Sb12Ce Ru_4 Sb_{12} and the Dense Kondo semiconductor CeOs4Sb12Ce Os_4 Sb_{12}

We have investigated the elastic properties of the Ce-based filled skutterudite antimonides CeRu$_{4}$Sb$_{12}$ and CeOs$_{4}$Sb$_{12}$ by means of ultrasonic measurements. CeRu$_{4}$Sb$_{12}$ shows a slight increase around 130 K in the temperature dependence of the elastic constants $C$$_{11}$, ($C$$_{11}$-$C$$_{12}$)/2 and $C$$_{44}$. No apparent softening toward low temperature due to a quadrupolar response of the 4$f$-electronic ground state of the Ce ion was observed at low temperatures. In contrast CeOs$_{4}$Sb$_{12}$ shows a pronounced elastic softening toward low temperature in the longitudinal $C$$_{11}$ as a function of temperature ($T$) below about 15 K, while a slight elastic softening was observed in the transverse $C$$_{44}$ below about 1.5 K. Furthermore, CeOs$_{4}$Sb$_{12}$ shows a steep decrease around a phase transition temperature of 0.9 K in both $C$$_{11}$ and$C$$_{44}$. The elastic softening observed in $C$$_{11}$ below about 15 K cannot be explained reasonably only by the crystalline electric field effect. It is most likely to be responsible for the coupling between the elastic strain and the quasiparticle band with a small energy gap in the vicinity of Fermi level. The elastic properties and the 4$f$ ground state of Ce ions in CeRu$_{4}$Sb$_{12}$ and CeOs$_{4}$Sb$_{12}$ are discussed from the viewpoint of the crystalline electric field effect and the band structure in the vicinity of Fermi level.Comment: 9 pages, 11 figures, regular pape

Simulations of the Population of Centaurs I: The Bulk Statistics

Large-scale simulations of the Centaur population are carried out. The evolution of 23328 particles based on the orbits of 32 well-known Centaurs is followed for up to 3 Myr in the forward and backward direction under the influence of the 4 massive planets. The objects exhibit a rich variety of dynamical behaviour with half-lives ranging from 540 kyr (1996 AR20) to 32 Myr (2000 FZ53). The mean half-life of the entire sample of Centaurs is 2.7 Myr. The data are analyzed using a classification scheme based on the controlling planets at perihelion and aphelion, previously given in Horner et al (2003). Transfer probabilities are computed and show the main dynamical pathways of the Centaur population. The total number of Centaurs with diameters larger than 1 km is estimated as roughly 44300, assuming an inward flux of one new short-period comet every 200 yrs. The flux into the Centaur region from the Edgeworth-Kuiper belt is estimated to be 1 new object every 125 yrs. Finally, the flux from the Centaur region to Earth-crossing orbits is 1 new Earth-crosser every 880 yrsComment: 15 pages, 2 figures, MNRAS in pres