Wavelength controlled multilayer-stacked linear InAs quantum dot arrays on InGaAsP/InP(100) by self-organized anisotropic strain engineering : a self-ordered quantum dot crystal

Multilayer-stacked linear InAs quantum dot (QD) arrays are created on InAs/InGaAsP superlattice templates formed by self-organized anisotropic strain engineering on InP (100) substrates in chemical beam epitaxy. Stacking of the QD arrays with identical emission wavelength in the 1.55 µm region at room temperature is achieved through the insertion of ultrathin GaAs interlayers beneath the QDs with increasing interlayer thickness in successive layers. The increment in the GaAs interlayer thickness compensates the QD size/wavelength increase during strain correlated stacking. This is the demonstration of a three-dimensionally self-ordered QD crystal with fully controlled structural and optical properties

Quantum dots for future nanophotonic devices: Lateral ordering, position, and number control

We review our recent advances in the lateral ordering, position, and number control of self-organized epitaxial semiconductor quantum dots based on self-organized anisotropic strain engineering, growth on patterned substrates, and selective area growth

Size dependent exciton g-factor in self-assembled InAs/InP quantum dots

We have studied the size dependence of the exciton g-factor in self-assembled InAs/InP quantum dots. Photoluminescence measurements on a large ensemble of these dots indicate a multimodal height distribution. Cross-sectional Scanning Tunneling Microscopy measurements have been performed and support the interpretation of the macro photoluminescence spectra. More than 160 individual quantum dots have systematically been investigated by analyzing single dot magneto-luminescence between 1200nm and 1600 nm. We demonstrate a strong dependence of the exciton g-factor on the height and diameter of the quantum dots, which eventually gives rise to a sign change of the g-factor. The observed correlation between exciton g-factor and the size of the dots is in good agreement with calculations. Moreover, we find a size dependent anisotropy splitting of the exciton emission in zero magnetic field.Comment: 15 pages, 7 figure

Photon trains and lasing : The periodically pumped quantum dot

We propose to pump semiconductor quantum dots with surface acoustic waves which deliver an alternating periodic sequence of electrons and holes. In combination with a good optical cavity such regular pumping could entail anti-bunching and sub-Poissonian photon statistics. In the bad-cavity limit a train of equally spaced photons would arise.Comment: RevTex, 5 pages, 1 figur

Regimes of operations of semiconductor ring lasers under optical injection and applications to optical signal processing

We present a detailed characterization of the semiconductor ring-laser operating regimes with special emphasis on the response to optical injection. Applications to an optical set/reset bistable memory and four-wave-mixing tunable THz signals generation are demonstrated.</p

Optical pumping and readout of bismuth hyperfine states in silicon for atomic clock applications

The push for a semiconductor-based quantum information technology has renewed interest in the spin states and optical transitions of shallow donors in silicon, including the donor bound exciton transitions in the near-infrared and the Rydberg, or hydrogenic, transitions in the mid-infrared. The deepest group V donor in silicon, bismuth, has a large zero-field ground state hyperfine splitting, comparable to that of rubidium, upon which the now-ubiquitous rubidium atomic clock time standard is based. Here we show that the ground state hyperfine populations of bismuth can be read out using the mid-infrared Rydberg transitions, analogous to the optical readout of the rubidium ground state populations upon which rubidium clock technology is based. We further use these transitions to demonstrate strong population pumping by resonant excitation of the bound exciton transitions, suggesting several possible approaches to a solid-state atomic clock using bismuth in silicon, or eventually in enriched 28Si

Entanglement transmission and generation under channel uncertainty: Universal quantum channel coding

We determine the optimal rates of universal quantum codes for entanglement transmission and generation under channel uncertainty. In the simplest scenario the sender and receiver are provided merely with the information that the channel they use belongs to a given set of channels, so that they are forced to use quantum codes that are reliable for the whole set of channels. This is precisely the quantum analog of the compound channel coding problem. We determine the entanglement transmission and entanglement-generating capacities of compound quantum channels and show that they are equal. Moreover, we investigate two variants of that basic scenario, namely the cases of informed decoder or informed encoder, and derive corresponding capacity results.Comment: 45 pages, no figures. Section 6.2 rewritten due to an error in equation (72) of the old version. Added table of contents, added section 'Conclusions and further remarks'. Accepted for publication in 'Communications in Mathematical Physics

Quasiparticle properties of a coupled quantum wire electron-phonon system

We study leading-order many-body effects of longitudinal optical (LO) phonons on electronic properties of one-dimensional quantum wire systems. We calculate the quasiparticle properties of a weakly polar one dimensional electron gas in the presence of both electron-phonon and electron-electron interactions. The leading-order dynamical screening approximation (GW approximation) is used to obtain the electron self-energy, the quasiparticle spectral function, and the quasiparticle damping rate in our calculation by treating electrons and phonons on an equal footing. Our theory includes effects (within the random phase approximation) of Fermi statistics, Landau damping, plasmon-phonon mode coupling, phonon renormalization, dynamical screening, and impurity scattering. In general, electron-electron and electron-phonon many-body renormalization effects are found to be nonmultiplicative and nonadditive in our theoretical results for quasiparticle properties.Comment: 21 pages, Revtex, 12 figures enclose

Electron spin coherence and electron nuclear double resonance of Bi donors in natural Si

Donors in silicon hold considerable promise for emerging quantum technologies, due to the their uniquely long electron spin coherence times. Bi donors in silicon differ from P and other Group V donors in several significant respects: they have the strongest binding energy (70.98 meV), a large nuclear spin (I = 9/2) and strong hyperfine coupling constant (A = 1475.4 MHz). These larger energy scales allow a detailed test of theoretical models describing the spectral diffusion mechanism that is known to govern the electron spin coherence time (T2e) of P-donors in natural silicon. We report the electron nuclear double resonance spectra of the Bi donor, across the range 200 MHz to 1.4 GHz, and confirm that coherence transfer is possible between electron and nuclear spin degrees of freedom at these higher frequencies