Nonlinear absorption of InN/InGaN multiple-quantum-well structures at optical telecommunication wavelengths

We report on the nonlinear optical absorption of InN/ InxGa 1-x N (x=0.8,0.9) multiple-quantum-well structures characterized at 1.55 μm by the Z-scan method in order to obtain the effective nonlinear absorption coefficient (α2) of the samples at high repetition rate. Saturable absorption is observed for the sample with x=0.9, with an effective α2 ∼-9× 103 cm/GW for the studied optical regime. For lower In content in the barrier, reverse saturable absorption is observed, which is attributed to two-photon absorption. © 2011 American Institute of Physics.Peer Reviewe

Non-linear absorption of InN/InGaN multiple-quantum-well structures at optical telecommunication wavelengths

We report on the nonlinear optical absorption of InN/ InxGa1−xN x=0.8, 0.9 multiple-quantum-well structures characterized at 1.55 m by the Z-scan method in order to obtain the effective nonlinear absorption coefficient 2 of the samples at high repetition rate. Saturable absorption is observed for the sample with x=0.9, with an effective 2 −9 103 cm/GW for the studied optical regime. For lower In content in the barrier, reverse saturable absorption is observed, which is attributed to two-photon absorption.Ministerio de Ciencia e InnovaciónComunidad de Madri