Silicon Betavoltaic Batteries Structures

For low-power miniature energy creation sources the particular interest is nickel Ni63. This paper discusses the main types of betavoltaic battery structures with the prospects for industrial application using - isotope of nickel Ni63. It is shown that the prospects for improving the effective efficiency are planar multijunction betavoltaic batteries

Silicon Photodetectors Matrix Coordinate Bipolar Functionally Integrated Structures

In this paper a new approach for solving the detection and coordinate the detection of radiation in the optical range of 0.3-1.1 microns, based on the use of so-called bipolar functionally integrated structures (BI-FIS) in pixels photodetector arrays is discussed. Variants of new technical solutions based on photodetectors matrix pixel BI-FIS structures are shown. Their effectiveness and scope are evaluated

Microchannel Structures of Betavoltaic Silicon Convertors

The paper presents the first results of experimental research on the microchannel structures of betavoltaic silicon converters based on the 63Ni isotope. The areas for further optimization of constructive and technological performance with high conversion efficiency were detected experimentally

Investigation of the Irradiation Influence with High-energy Electrons on the Electrical Parameters of the IGBT-transistors

The results of studies of the effectiveness of the radiation method for control the characteristics of the IGBT transistors are shown. Experimental results on the effect of irradiation with high-energy electrons with an energy of 6 MeV for dynamic and static parameters of the IGBT transistors of company International Rectifier IRGB14C40L are discussed

Investigation of the Irradiation Influence with High-energy Electrons on the Electrical Parameters of the IGBT-transistors

The results of studies of the effectiveness of the radiation method for control the characteristics of the IGBT transistors are shown. Experimental results on the effect of irradiation with high-energy electrons with an energy of 6 MeV for dynamic and static parameters of the IGBT transistors of company International Rectifier IRGB14C40L are discussed

Thermal and Magnetic Field Sensors Based on Injection-coupled Devices

Operation principle and possible applications of a novel type of silicon integrated circuit (IC) device – injection-coupled device (ICD) – are addressed. Examples of possible ICD electrical and physical designs are examined in detail. These are based on the existing CMOS and use bipolar technologies. It is shown that in active mode only one cell of ICD-based sensor chain consumes power. This circumstance enables one to achieve an extraordinarily low power consumption compared to the CMOS ICs. This is because the power consumption of an ICD as a whole is not different of that of a single cell in its IC matrix. These advantages make ICDs highly attractive for a number of important applications, such as, e.g., radiation detectors or magnetic and thermal field detectors. When you are citing the document, use the following link http://essuir.sumdu.edu.ua/handle/123456789/3625

Photosensitive AlGaAs / GaAs Structures Grown by Molecular Beam Epitaxy

AlGaAs / GaAs photosensitive structures were grown by molecular beam epitaxy and photodetector de-vices were fabricated. The structures were characterized by reflection high-energy electron diffraction (RHEED), reflectance anisotropy spectroscopy (RAS) and atomic force microscopy (AFM). Spectral charac-teristics of p-i-n structures were calculated. It is shown that obtained structures have atomically smooth surface and abrupt heterointerfaces. Room-temperature I-V measurements of fabricated photodetectors showed low dark current Id=3.38 nA at reverse bias Urev=5 V. When you are citing the document, use the following link http://essuir.sumdu.edu.ua/handle/123456789/3613

Simulation the Beta Power Sources Characteristics

In this paper the simulation of silicon beta-stimulated power sources spectral sensitivity characteristics was carried out. It was analyzed the influence of the semiconductor material characteristics (the doping level, lifetime) and power supply design on the photosensitive structures characteristics in order to optimize them

The Current-voltage Characteristics Simulation of the Betavoltaic Power Supply

In order to optimize betavoltaic power supply it was calculated the current-voltage characteristics when changing the depth of the upper p-layer and at changing doping levels structure areas. It is shown that an increase in the depth reduces the short-circuit current and thus reduces the open circuit voltage. It has been observed that the concentration of the lightly doped region more significantly influence on the current-voltage characteristics than the depth of the p-n-junction. The concentration of the n-region, equal to 1014 cm – 3, can be considered as during betavoltaic power supply design. It is shown that, by increasing the power supply activity the conversion efficiency of the structure increases, too

Monolithic Silicon Photodetector - Detector of Ionizing Radiation Based on Functional Integrated MOS Structures

This paper describes the principle of operation, construction, architecture and fabrication of a new type of monolithic silicon coordinate photodetector - detector of optical and ionizing radiation (MSCP) on the basis of functional integrated MOS structures. The analytical estimation of electrophysical characteristics MSCP is given. It is shown that MSCP is a specialized monolithic silicon VLSI containing two-dimensional pixel array with high and low voltage functionally integrated structures (FIS) and peripheral electronic circuits of amplification and signal processing matrix. Estimations and presents comparative characteristics are presented. They show potential MSCP possibilities for registration of optical and ionizing radiation. Experimental results of -particles and electrons registration. The possible areas of application, with the possibility of its use in a wide X-ray panels medical supplies, X-rays, etc are considered. When you are citing the document, use the following link http://essuir.sumdu.edu.ua/handle/123456789/3625