72 research outputs found
Electrical and structural characterizations of BGaN thin films grown by metal-organic vapor-phase epitaxy
International audienceno abstrac
GaN thin films on z- and x-cut LiNbO3 substrates by MOVPE
International audienceWe report epitaxial growth of GaN layers on z- and x-cut LiNbO3 substrates using MOVPE. GaN layers with the thick- ness of 450 nm were characterized using X-ray diffraction. For both, z- and x-cut orientations of LiNbO3 substrates, the GaN layers have c-axis orientation normal to the substrate plane and the in-plane lattice orientation of GaN layers coincides with the primary axes of LiNbO3 substrates. Although GaN layers exhibit almost complete strain relaxation, the re- sidual compressive strain determined with respect to a free-standing GaN is of the order of +0.37% and +0.2% for z- and x-cut substrates, respectively
Novel approach for chemical lift-off and wafer bonding of InGaN besed devices using sacrificial ZnO template layers
International audienc
Optical Characterization Of Thick InGaN Layers For Solar Cell Applications
International audienc
Crystal quality characterization of MO-VPE InxGa1-xN thin films using disorder parameters
LGEP 2011 ID = 756International audienc
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