Electrical and structural characterizations of BGaN thin films grown by metal-organic vapor-phase epitaxy

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GaN thin films on z- and x-cut LiNbO3 substrates by MOVPE

International audienceWe report epitaxial growth of GaN layers on z- and x-cut LiNbO3 substrates using MOVPE. GaN layers with the thick- ness of 450 nm were characterized using X-ray diffraction. For both, z- and x-cut orientations of LiNbO3 substrates, the GaN layers have c-axis orientation normal to the substrate plane and the in-plane lattice orientation of GaN layers coincides with the primary axes of LiNbO3 substrates. Although GaN layers exhibit almost complete strain relaxation, the re- sidual compressive strain determined with respect to a free-standing GaN is of the order of +0.37% and +0.2% for z- and x-cut substrates, respectively

Novel approach for chemical lift-off and wafer bonding of InGaN besed devices using sacrificial ZnO template layers

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Optical Characterization Of Thick InGaN Layers For Solar Cell Applications

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Crystal quality characterization of MO-VPE InxGa1-xN thin films using disorder parameters

LGEP 2011 ID = 756International audienc