Compressibility and probabilistic proofs

We consider several examples of probabilistic existence proofs using compressibility arguments, including some results that involve Lov\'asz local lemma.Comment: Invited talk for CiE 2017 (full version

The Preparation and Certification of High School Teachers with Special Reference to Tennessee

Statistics relative to the actual preparation that the high school teachers of Tennessee have had are very difficult to obtain. At the beginning of the study of this subject, the writer sent the accompanying questionnaire, to all the high school teachers-including both country and city schools-of the state, but the number returned was not sufficient to form any scientific conclusion on the subject. Of the four hundred fifty blanks sent to the various high school teachers of the state only sixty were returned giving the desired information. Of the sixty returned, twenty-seven hold certificates issued on diplomas which is evidence that they hold a bachelor\u27s degree from a college or university requiring four years of work to obtain the degree. Three were graduates of some high school with only a high school diploma, while thirty hold diplomas from some college but have not had the full four year course necessary to obtain a certificate on diploma

Heavily Irradiated N-in-p Thin Planar Pixel Sensors with and without Active Edges

We present the results of the characterization of silicon pixel modules employing n-in-p planar sensors with an active thickness of 150 $\mathrm{\mu}$m, produced at MPP/HLL, and 100-200 $\mathrm{\mu}$m thin active edge sensor devices, produced at VTT in Finland. These thin sensors are designed as candidates for the ATLAS pixel detector upgrade to be operated at the HL-LHC, as they ensure radiation hardness at high fluences. They are interconnected to the ATLAS FE-I3 and FE-I4 read-out chips. Moreover, the n-in-p technology only requires a single side processing and thereby it is a cost-effective alternative to the n-in-n pixel technology presently employed in the LHC experiments. High precision beam test measurements of the hit efficiency have been performed on these devices both at the CERN SpS and at DESY, Hamburg. We studied the behavior of these sensors at different bias voltages and different beam incident angles up to the maximum one expected for the new Insertable B-Layer of ATLAS and for HL-LHC detectors. Results obtained with 150 $\mathrm{\mu}$m thin sensors, assembled with the new ATLAS FE-I4 chip and irradiated up to a fluence of 4$\times$10$^{15}\mathrm{n}_{\mathrm{eq}}/\mathrm{cm}^2$, show that they are excellent candidates for larger radii of the silicon pixel tracker in the upgrade of the ATLAS detector at HL-LHC. In addition, the active edge technology of the VTT devices maximizes the active area of the sensor and reduces the material budget to suit the requirements for the innermost layers. The edge pixel performance of VTT modules has been investigated at beam test experiments and the analysis after irradiation up to a fluence of 5$\times$10$^{15}\mathrm{n}_{\mathrm{eq}}/\mathrm{cm}^2$ has been performed using radioactive sources in the laboratory.Comment: Proceedings for iWoRiD 2013 conference, submitted to JINS

Production and Characterisation of SLID Interconnected n-in-p Pixel Modules with 75 Micrometer Thin Silicon Sensors

The performance of pixel modules built from 75 micrometer thin silicon sensors and ATLAS read-out chips employing the Solid Liquid InterDiffusion (SLID) interconnection technology is presented. This technology, developed by the Fraunhofer EMFT, is a possible alternative to the standard bump-bonding. It allows for stacking of different interconnected chip and sensor layers without destroying the already formed bonds. In combination with Inter-Chip-Vias (ICVs) this paves the way for vertical integration. Both technologies are combined in a pixel module concept which is the basis for the modules discussed in this paper. Mechanical and electrical parameters of pixel modules employing both SLID interconnections and sensors of 75 micrometer thickness are covered. The mechanical features discussed include the interconnection efficiency, alignment precision and mechanical strength. The electrical properties comprise the leakage currents, tuning characteristics, charge collection, cluster sizes and hit efficiencies. Targeting at a usage at the high luminosity upgrade of the LHC accelerator called HL-LHC, the results were obtained before and after irradiation up to fluences of $10^{16}$ $\mathrm{n}_{\mathrm{eq}}/\mathrm{cm}^2$ (1 MeV neutrons).Comment: 16 pages, 22 figure

Thin n-in-p pixel sensors and the SLID-ICV vertical integration technology for the ATLAS upgrade at the HL-LHC

The R&D activity presented is focused on the development of new modules for the upgrade of the ATLAS pixel system at the High Luminosity LHC (HL-LHC). The performance after irradiation of n-in-p pixel sensors of different active thicknesses is studied, together with an investigation of a novel interconnection technique offered by the Fraunhofer Institute EMFT in Munich, the Solid-Liquid-InterDiffusion (SLID), which is an alternative to the standard solder bump-bonding. The pixel modules are based on thin n-in-p sensors, with an active thickness of 75 um or 150 um, produced at the MPI Semiconductor Laboratory (MPI HLL) and on 100 um thick sensors with active edges, fabricated at VTT, Finland. Hit efficiencies are derived from beam test data for thin devices irradiated up to a fluence of 4e15 neq/cm^2. For the active edge devices, the charge collection properties of the edge pixels before irradiation is discussed in detail, with respect to the inner ones, using measurements with radioactive sources. Beyond the active edge sensors, an additional ingredient needed to design four side buttable modules is the possibility of moving the wire bonding area from the chip surface facing the sensor to the backside, avoiding the implementation of the cantilever extruding beyond the sensor area. The feasibility of this process is under investigation with the FE-I3 SLID modules, where Inter Chip Vias are etched, employing an EMFT technology, with a cross section of 3 um x 10 um, at the positions of the original wire bonding pads.Comment: Proceedings for Pixel 2012 Conference, submitted to NIM A, 6 page

Bohmian trajectories and Klein's paradox

We compute the Bohmian trajectories of the incoming scattering plane waves for Klein's potential step in explicit form. For finite norm incoming scattering solutions we derive their asymptotic space-time localization and we compute some Bohmian trajectories numerically. The paradox, which appears in the traditional treatments of the problem based on the outgoing scattering asymptotics, is absent.Comment: 14 pages, 3 figures; minor format change

Characterization of Thin Pixel Sensor Modules Interconnected with SLID Technology Irradiated to a Fluence of 2⋅1015\cdot 10^{15}\,neq_{\mathrm{eq}}/cm2^2

A new module concept for future ATLAS pixel detector upgrades is presented, where thin n-in-p silicon sensors are connected to the front-end chip exploiting the novel Solid Liquid Interdiffusion technique (SLID) and the signals are read out via Inter Chip Vias (ICV) etched through the front-end. This should serve as a proof of principle for future four-side buttable pixel assemblies for the ATLAS upgrades, without the cantilever presently needed in the chip for the wire bonding. The SLID interconnection, developed by the Fraunhofer EMFT, is a possible alternative to the standard bump-bonding. It is characterized by a very thin eutectic Cu-Sn alloy and allows for stacking of different layers of chips on top of the first one, without destroying the pre-existing bonds. This paves the way for vertical integration technologies. Results of the characterization of the first pixel modules interconnected through SLID as well as of one sample irradiated to $2\cdot10^{15}$\,\neqcm{} are discussed. Additionally, the etching of ICV into the front-end wafers was started. ICVs will be used to route the signals vertically through the front-end chip, to newly created pads on the backside. In the EMFT approach the chip wafer is thinned to (50--60)\,$\mu$m.Comment: Proceedings to PSD

VLTI/PIONIER images the Achernar disk swell

Context. The mechanism of disk formation around fast-rotating Be stars is not well understood. In particular, it is not clear which mechanisms operate, in addition to fast rotation, to produce the observed variable ejection of matter. The star Achernar is a privileged laboratory to probe these additional mechanisms because it is close, presents B-Be phase variations on timescales ranging from 6 yr to 15 yr, a companion star was discovered around it, and probably presents a polar wind or jet. Aims. Despite all these previous studies, the disk around Achernar was never directly imaged. Therefore we seek to produce an image of the photosphere and close environment of the star. Methods. We used infrared long-baseline interferometry with the PIONIER/VLTI instrument to produce reconstructed images of the photosphere and close environment of the star over four years of observations. To study the disk formation, we compared the observations and reconstructed images to previously computed models of both the stellar photosphere alone (normal B phase) and the star presenting a circumstellar disk (Be phase). Results. The observations taken in 2011 and 2012, during the quiescent phase of Achernar, do not exhibit a disk at the detection limit of the instrument. In 2014, on the other hand, a disk was already formed and our reconstructed image reveals an extended H-band continuum excess flux. Our results from interferometric imaging are also supported by several H-alpha line profiles showing that Achernar started an emission-line phase sometime in the beginning of 2013. The analysis of our reconstructed images shows that the 2014 near-IR flux extends to 1.7 - 2.3 equatorial radii. Our model-independent size estimation of the H-band continuum contribution is compatible with the presence of a circumstellar disk, which is in good agreement with predictions from Be-disk models