Decomposition of NO studied by infrared emission and CO laser absorption

A diagnostic technique for monitoring the concentration of NO using absorption of CO laser radiation was developed and applied in a study of the decomposition kinetics of NO. Simultaneous measurements of infrared emission by NO at 5.3 microns were also made to validate the laser absorption technique. The data were obtained behind incident shocks in NO-N2O-Ar (or Kr) mixtures, with temperatures in the range 2400-4100 K. Rate constants for dominant reactions were inferred from comparisons with computer simulations of the reactive flow

Abstract Interpretation with Unfoldings

We present and evaluate a technique for computing path-sensitive interference conditions during abstract interpretation of concurrent programs. In lieu of fixed point computation, we use prime event structures to compactly represent causal dependence and interference between sequences of transformers. Our main contribution is an unfolding algorithm that uses a new notion of independence to avoid redundant transformer application, thread-local fixed points to reduce the size of the unfolding, and a novel cutoff criterion based on subsumption to guarantee termination of the analysis. Our experiments show that the abstract unfolding produces an order of magnitude fewer false alarms than a mature abstract interpreter, while being several orders of magnitude faster than solver-based tools that have the same precision.Comment: Extended version of the paper (with the same title and authors) to appear at CAV 201

Ultra-compact optical auto-correlator based on slow-light enhanced third harmonic generation in a silicon photonic crystal waveguide

The ability to use coherent light for material science and applications is directly linked to our ability to measure short optical pulses. While free-space optical methods are well-established, achieving this on a chip would offer the greatest benefit in footprint, performance, flexibility and cost, and allow the integration with complementary signal processing devices. A key goal is to achieve operation at sub-Watt peak power levels and on sub-picosecond timescales. Previous integrated demonstrations require either a temporally synchronized reference pulse, an off-chip spectrometer, or long tunable delay lines. We report the first device capable of achieving single-shot time-domain measurements of near-infrared picosecond pulses based on an ultra-compact integrated CMOS compatible device, with the potential to be fully integrated without any external instrumentation. It relies on optical third-harmonic generation in a slow-light silicon waveguide. Our method can also serve as a powerful in-situ diagnostic tool to directly map, at visible wavelengths, the propagation dynamics of near-infrared pulses in photonic crystals.Comment: 20 pages, 6 figures, 38 reference

Optical anisotropy and photoluminescence temperature dependence for self-assembled InAs quantum islands grown on vicinal (001) InP substrates

International audienceIn this paper, we report on a detailed investigation of the effect of misorientated InP(OOl) substrates on the optical properties of InAs quantum islands grown by molecular beam epitaxy in the Stranski-Krastanow regime. Temperature-dependent photoluminescence and polarization of photoluminescence (PPL) are studied. PPL shows a high degree of linear polarization, near 40%, for the sample grown on the substrate with 2°off miscut angle towards [110] direction (2°F) and only 16% for the sample grown on the substrate with 2°off miscut angle towards [010] direction (2°B). This result pointing out the growth ofInAs quantum wires (QWr) on 2°F substrate and of quasi-isotropic InAs quantum dots (QD) on 2°B substrate. The luminescence remains strong at 300 K as much as 36% of that at 8 K, indicating a strong spatial localization of the carriers in the InAs QIs grown on InP(OOl)

Optical properties of self-assembled InAs quantum islands grown on InP(001) vicinal substrates

International audienceWe have investigated the effect of misorientated InP001 substrates on the optical properties of InAs quantum islands QIs grown by molecular-beam epitaxy in the Stranski-Krastanow regime. Detailed temperature-dependent photoluminescence PL, excitation density PL, and polarization of photoluminescence PPL are studied. PPL shows a high degree of linear polarization near 40% for the nominally oriented substrate n and for the substrate with 2° off miscut angle toward the 110 direction (2° F), while it is near 15% for the substrate with 2° off miscut angle towards 010 direction (2° B), indicating the growth of InAs quantum wires on nominal and 2° F substrates and of InAs quantum dots on 2° B substrate. These island shapes are confirmed by morphological investigations performed by atomic force microscopy. The integrated PL intensity remains very strong at room temperature, as much as 36% of that at 8 K, indicating a strong spatial localization of the carriers in the InAs QIs grown on InP001

Characterizing photonic crystal waveguides with an expanded k-space evanescent coupling technique

We demonstrate a direct, single measurement technique for characterizing the dispersion of a photonic crystal waveguide (PCWG) using a tapered fiber evanescent coupling method. A highly curved fiber taper is used to probe the Fabry-Pérot spectrum of a closed PCWG over a broad k-space range, and from this measurement the dispersive properties of the waveguide can be found. Waveguide propagation losses can also be estimated from measurements of closed waveguides with different lengths. The validity of this method is demonstrated by comparing the results obtained on a ‘W1’ PCWG in chalcogenide glass with numerical simulation