Acceptor-like deep level defects in ion-implanted ZnO

N-type ZnO samples have been implanted with MeV Zn⁺ ions at room temperature to doses between 1×10⁸ and 2×10¹⁰cm⁻², and the defect evolution has been studied by capacitance-voltage and deep level transient spectroscopy measurements. The results show a dose dependent compensation by acceptor-like defects along the implantation depth profile, and at least four ion-induced deep-level defects arise, where two levels with energy positions of 1.06 and 1.2 eV below the conduction band increase linearly with ion dose and are attributed to intrinsic defects. Moreover, a re-distribution of defects as a function of depth is observed already at temperatures below 400 K.This work was supported by the Norwegian Research Council through the Frienergi program and the Australian Research Council through the Discovery projects program

Impact of minority concentration on fundamental (H)D ICRF heating performance in JET-ILW

ITER will start its operation with non-activated hydrogen and helium plasmas at a reduced magnetic field of B-0 = 2.65 T. In hydrogen plasmas, the two ion cyclotron resonance frequency (ICRF) heating schemes available for central plasma heating (fundamental H majority and 2nd harmonic He-3 minority ICRF heating) are likely to suffer from relatively low RF wave absorption, as suggested by numerical modelling and confirmed by previous JET experiments conducted in conditions similar to those expected in ITER's initial phase. With He-4 plasmas, the commonly adopted fundamental H minority heating scheme will be used and its performance is expected to be much better. However, one important question that remains to be answered is whether increased levels of hydrogen (due to e. g. H pellet injection) jeopardize the high performance usually observed with this heating scheme, in particular in a full-metal environment. Recent JET experiments performed with the ITER-likewall shed some light onto this question and the main results concerning ICRF heating performance in L-mode discharges are summarized here

Energetics of intrinsic defects and their complexes in ZnO investigated by density functional calculations

Formation energies of various intrinsic defects and defect complexes in ZnO have been calculated using a density-functional-theory-based pseudopotential all-electron method. The various defects considered are oxygen vacancy (VO), zinc vacancy (VZn), oxygen at an interstitial site (Oi), Zn at an interstitial site (Zni), Zn at VO (ZnO), O at VZn(OZn), and an antisite pair (combination of the preceding two defects). In addition, defect complexes like (VO+Zni) and Zn-vacancy clusters are studied. The Schokkty pair (VO+VZn) and Frenkel pairs [(VO+Oi) and (VZn+Zni)] are considered theoretically for the first time. Upon comparing the formation energies of these defects, we find that VO would be the dominant intrinsic defect under both Zn-rich and O-rich conditions and it is a deep double donor. Both ZnO and Zni are found to be shallow donors. The low formation energy of donor-type intrinsic defects could lead to difficulty in achieving p-type conductivity in ZnO. Defect complexes have charge transitions deep inside the band gap. The red, yellow, and green photoluminescence peaks of undoped samples can be assigned to some of the defect complexes considered. It is believed that the red luminescence originates from an electronic transition in VO, but we find that it can originate from the antisite ZnO defect. Charge density and electron-localization function analyses have been used to understand the effect of these defects on the ZnO lattice. The electronic structure of ZnO with intrinsic defects has been studied using density-of-states and electronic band structure plots. The acceptor levels introduced by VZn are relatively localized, making it difficult to achieve p-type conductivity with sufficient hole mobility.Peer reviewe

Deactivation of Li by vacancy clusters in ion-implanted and flash-annealed ZnO

Li is present in hydrothermally grown ZnO at high concentrations and is known to compensate both n- and p-type doping due to its amphoteric nature. However, Li can be manipulated by annealing and ion implantation in ZnO. Fast, 20 ms flash anneals in the 900–1400°C range result in vacancy cluster formation and, simultaneously, a low-resistive layer in the implanted part of the He- and Li-implanted ZnO. The vacancy clusters, involving 3-4 Zn vacancies, trap and deactivate Li, leaving other in-grown donors to determine the electrical properties. Such clusters are not present in sufficient concentrations after longer (1h) anneals because of a relatively low dissociation barrier ∼2.6 ± 0.3 eV, so ZnO remains compensated until Li diffuses out after 1250°C anneals.Peer reviewe

Vacancy generation in liquid phase epitaxy of Si

Concerted experiments and theoretical analysis are applied to conclusively demonstrate the vacancy generation during fast melting and regrowth of Si by laser irradiation. Experiments, based on the positron annihilation spectroscopy and designed to test the theoretical predictions, evidence a vacancy supersaturation after the laser process depending on the irradiation conditions. Stochastic atomistic simulations of the molten Si recrystallization show trapping of vacancies in the recrystallized region. Finally, continuum phase-field simulations of the full process, calibrated using the Monte Carlo results, show a defect evolution in close agreement with the experiments.Peer reviewe

Identification of substitutional Li in n-type ZnO and its role as an acceptor

Monocrystalline n-type zinc oxide (ZnO) samples prepared by different techniques and containing various amounts of lithium (Li) have been studied by positron annihilation spectroscopy (PAS) and secondary ion mass spectrometry. A distinct PAS signature of negatively charged Li atoms occupying a Zn-site (Li−Zn), so-called substitutional Li, is identified and thus enables a quantitative determination of the content of LiZn. In hydrothermally grown samples with a total Li concentration of ~2×10 exp 17 cm exp −3,LiZn is found to prevail strongly, with only minor influence, by other possible configurations of Li. Also in melt grown samples doped with Li to a total concentration as high as 1.5×10 exp 19 cm exp −3, a considerable fraction of the Li atoms (at least 20%) is shown to reside on the Zn-site, but despite the corresponding absolute acceptor concentration of ⩾(2–3)×10 exp 18 cm exp −3, the samples did not exhibit any detectable p-type conductivity. The presence of LiZn is demonstrated to account for the systematic difference in positron lifetime of 10–15 ps between Li-rich and Li-lean ZnO materials as found in the literature, but further work is needed to fully elucidate the role of residual hydrogen impurities and intrinsic open volume defects.Peer reviewe