Temperature-dependent thermal conductivity and diffusivity of a Mg-doped insulating β\beta-Ga2O3\mathrm{Ga_2O_3} single crystal along [100], [010] and [001]

The monoclinic crystal structure of $\beta$-$\mathrm{Ga_2O_3}$ leads to significant anisotropy of the thermal properties. The 2$\omega$-method is used to measure the thermal diffusivity $D$ in [010] and [001] direction respectively and to determine the thermal conductivity values $\lambda$ of the [100], [010] and [001] direction from the same insulating Mg doped $\beta$-$\mathrm{Ga_2O_3}$ single crystal. We detect a temperature independent anisotropy factor of both the thermal diffusivity and conductivity values of $D_{[010]}/D_{[001]}=\lambda_{[010]}/\lambda_{[001]}=1.4\pm 0.1$. The temperature-dependence is in accord with phonon-phonon-Umklapp scattering processes from 300 K down to 150 K. Below 150 K point-defect-scattering lowers the estimated phonon-phonon-Umklapp-scattering values.Comment: 11 pages, 8 figure

Thermal conductivity, diffusivity and specific heat capacity of as-grown, degenerate single-crystalline ZnGa2O4

This work provides the first experimental determination of the low-temperature thermal properties for novel highly pure single-crystalline ZnGa2O4. The temperature dependence of the thermal conductivity, diffusivity and specific heat capacity of as-grown, degenerated ZnGa2O4 single crystals is measured using the 2ω-method between T = 27 K and room temperature. At room temperature the thermal diffusivity is D ≈ 6.9 · 10−6 m2s, the thermal conductivity is λ ≈ 22.9 W mK−1 and the specific heat capacity is CV ≈ 537 J kgK−1. The thermal conductivity increases with decreasing temperatures due to reduced phonon-phonon Umklapp scattering down to T = 50 K. For lower temperatures the thermal conductivity is limited by boundary scattering.Deutsche Forschungsgemeinschafthttps://doi.org/10.13039/501100001659Peer Reviewe

Charge carrier density, mobility and Seebeck coefficient of melt-grown bulk ZnGa2O4 single crystals

The temperature dependence of the charge carrier density, mobility and Seebeck coefficient of melt-grown, bulk ZnGa2O4 single crystals was measured between 10 K and 310 K. The electrical conductivity at room temperature is about s = 286 S/cm due to a high electron concentration of n = 3.26*10^(19) cm^(-3), caused by unintenional doping. The mobility at room temperature is mu = 55 cm^2/Vs, whereas the scattering on ionized impurities limits the mobility to mu =62 cm^2/Vs for temperatures lower than 180 K. The Seebeck coefficient relative to aluminum at room temperature is S_(ZnGa2O4-Al) = (-125+-2) muV/K and shows a temperature dependence as expected for degenerate semiconductors. At low temperatures, around 60 K we observed a maximum of the Seebeck coefficient due to the phonon drag effect

Temperature dependence of the Seebeck coefficient of epitaxial β -Ga2O3 thin films

The temperature dependence of the Seebeck coefficient of homoepitaxial metal organic vapor phase grown, silicon doped β-Ga 2 O 3 thin films was measured relative to aluminum. For room temperature, we found the relative Seebeck coefficient of Sβ-Ga2O3-Al=(-300±20) μV/K. At high bath temperatures T > 240 K, the scattering is determined by electron-phonon-interaction. At lower bath temperatures between T = 100 K and T = 300 K, an increase in the magnitude of the Seebeck coefficient is explained in the frame of Stratton's formula. The influence of different scattering mechanisms on the magnitude of the Seebeck coefficient is discussed and compared with Hall measurement results. © 2019 Author(s)

Free-standing millimetre-long Bi2Te3 sub-micron belts catalyzed by TiO2 nanoparticles

Physical vapour deposition (PVD) is used to grow millimetre-long Bi2Te3 sub-micron belts catalysed by TiO2 nanoparticles. The catalytic efficiency of TiO2 nanoparticles for the nanostructure growth is compared with the catalyst-free growth employing scanning electron microscopy. The catalyst-coated and catalyst-free substrates are arranged side-by-side, and overgrown at the same time, to assure identical growth conditions in the PVD furnace. It is found that the catalyst enhances the yield of the belts. Very long belts were achieved with a growth rate of 28 nm/min. A ∼1-mm-long belt with a rectangular cross section was obtained after 8 h of growth. The thickness and width were determined by atomic force microscopy, and their ratio is ∼1:10. The chemical composition was determined to be stoichiometric Bi2Te3 using energy-dispersive X-ray spectroscopy. Temperature-dependent conductivity measurements show a characteristic increase of the conductivity at low temperatures. The room temperature conductivity of 0.20 × 10(5) S m (-1) indicates an excellent sample quality

Transport Properties and Finite Size Effects in β-Ga2O3 Thin Films

Thin films of the wide band gap semiconductor β-Ga2O3 have a high potential for applications in transparent electronics and high power devices. However, the role of interfaces remains to be explored. Here, we report on fundamental limits of transport properties in thin films. The conductivities, Hall densities and mobilities in thin homoepitaxially MOVPE grown (100)-orientated β-Ga2O3 films were measured as a function of temperature and film thickness. At room temperature, the electron mobilities ((115 ± 10) cm2/Vs) in thicker films (>150 nm) are comparable to the best of bulk. However, the mobility is strongly reduced by more than two orders of magnitude with decreasing film thickness ((5.5 ± 0.5) cm2/Vs for a 28 nm thin film). We find that the commonly applied classical Fuchs-Sondheimer model does not explain sufficiently the contribution of electron scattering at the film surfaces. Instead, by applying an electron wave model by Bergmann, a contribution to the mobility suppression due to the large de Broglie wavelength in β-Ga2O3 is proposed as a limiting quantum mechanical size effect