4,759 research outputs found
Formation of ultrafine-grained structure in Al-Mg-Mn-Zr sheets by severe plastic deformation and subsequent rolling
The effect of cold rolling and subsequent annealing on microstructure and mechanical properties of ultrafine-grained Al-Mg-Mn-Zr aluminum alloy was studie
Hole density dependence of effective mass, mobility and transport time in strained Ge channel modulation-doped heterostructures
We performed systematic low-temperature (T = 350 mK–15 K) magnetotransport measurements on the two-dimensional hole gas with various sheet carrier densities Ps = (0.57–2.1)×1012 cm–2 formed in the strained Ge channel modulation-doped (MOD) SiGe heterostructures grown on Si substrates. It was found that the effective hole mass deduced by temperature dependent Shubnikov–de Hass oscillations increased monotonically from (0.087±0.05)m0 to (0.19±0.01)m0 with the increase of Ps, showing large band nonparabolicity in strained Ge. In contrast to this result, the increase of the mobility with increasing Ps (up to 29 000 cm2/V s) was observed, suggesting that Coulomb scattering played a dominant role in the transport of the Ge channel at low temperatures. In addition, the Dingle ratio of the transport time to the quantum lifetime was found to increase with increasing Ps, which was attributed to the increase of remote impurity scattering with the increase of the doping concentration in MOD SiGe layers
Extremely high room-temperature two-dimensional hole gas mobility in Ge/Si0.33Ge0.67/Si(001) p-type modulation-doped heterostructures
To extract the room-temperature drift mobility and sheet carrier density of two-dimensional hole gas (2DHG) that form in Ge strained channels of various thicknesses in Ge/Si0.33Ge0.67/Si(001) p-type modulation-doped heterostructures, the magnetic field dependences of the magnetoresistance and Hall resistance at temperature of 295 K were measured and the technique of maximum entropy mobility spectrum analysis was applied. This technique allows a unique determination of mobility and sheet carrier density of each group of carriers present in parallel conducting multilayers semiconductor heterostructures. Extremely high room-temperature drift mobility (at sheet carrier density) of 2DHG 2940 cm2 V–1 s–1 (5.11×1011 cm–2) was obtained in a sample with a 20 nm thick Ge strained channel
Mechanisms of arsenic clustering in silicon
A model of arsenic clustering in silicon is proposed and analyzed. The main
feature of the proposed model is the assumption that negatively charged arsenic
complexes play a dominant role in the clustering process. To confirm this
assumption, electron density and concentration of impurity atoms incorporated
into the clusters are calculated as functions of the total arsenic
concentration. A number of the negatively charged clusters incorporating a
point defect and one or more arsenic atoms are investigated. It is shown that
for the doubly negatively charged clusters or for clusters incorporating more
than one arsenic atom the electron density reaches a maximum value and then
monotonically and slowly decreases as total arsenic concentration increases. In
the case of doubly negatively charged cluster incorporating two arsenic atoms,
the calculated electron density agrees well with the experimental data.
Agreement with the experiment confirms the conclusion that two arsenic atoms
participate in the cluster formation. Among all present models, the proposed
model of clustering by formation of doubly negatively charged cluster
incorporating two arsenic atoms gives the best fit to the experimental data and
can be used in simulation of high concentration arsenic diffusion.Comment: 13 pages, 4 figures. Revised and shortened version of the paper has
been published in Phys. Rev. B, Vol.74 (3), art. no. 035205 (2006
Combination of fluorescent and spin labels: a powerful method for the optimization of hydrophilic membranes for the separation of oil-in-water emulsions
A new method for assessing the quality of fibre coating based on a combination of fluorescence microscopy and electron paramagnetic resonance is presented in this work. An influence of the carboxymethylcellulose/polyvinylamine gel preparation method on the mobility of the spin label was established. The mobility of the spin label changes from 3.5 ns in the case of a polyvinylamine solution to 12.8 ns in the case of a cross-linked gel on the surface of the glass fibre. A qualitative relationship was found between the mobility of the spin label in the gel applied to the glass fibre and the rate of spreading of crude oil over its surface. This method can be used to make membranes for the separation of water-in-oil emulsions
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