An Investigation of the Longitudinal Proximity Effect in Superconducting and Normal Metal TES

As the TES volume and (effective) Tc become very small - for volume > the TES Tc, connected at opposite ends of TES approaches zero, superconductivity is induced parallel to the current flow, or longitudinally, and results in a much higher effective TES Te. Here we present effective Te measurements of Mo/Au TES bounded by Nb leads as a function of L which ranges between 4 and 36 micrometer. We observe that the effective Te is suppressed for current density of order 10(exp -6) A/sq micrometers. We also explore the possibility of using a normal metal TES

Development of Superconducting Transition Edge Sensors Based on Electron-Phonon Decoupling

We have successfully fabricated a superconducting transition edge sensor (TES), bolometer that centers on the use of electron-phonon decoupling (EPD) for thermal isolation. We have selected a design approach that separates the two functions of far-infrared and THz radiative power absorption and temperature measurement, allowing separate optimization of the performance of each element. We have integrated molybdenum/gold (Mo/Au) bilayer TES and ion assisted thermally evaporated (IAE) bismuth (Bi) films as radiation absorber coupled to a low-loss microstripline from niobium (Nb) ground plane to a twin-slot antenna structure. The thermal conductance (G) and the time constant for the different geometry device have been measured. For one such device, the measured G is 1.16 x 10(exp -10) W/K (plus or minus 0.61 x 10(exp- 10) W/K) at 60 mK, which corresponds to noise equivalent power (NEP) = 1.65 X 10(exp -18)W/vHz and time constant of approximately 5 microseconds

Ultrasensitive Superconducting Transition Edge Sensors Based On Electron-Phonon Decoupling

We have successfully fabricated the superconducting transition edge sensor (TES), bolometer technology that centers on the use of electron-phonon decoupling (EPD) to thermally isolate the bolometer. Along with material characterization for large format antenna coupled bolometer arrays, we present the initial test results of bolometer based on EPD designed for THz detection. We have selected a design approach that separates the two functions of photon absorption and temperature measurement, allowing separate optimization of the performance of each element. We have integrated Molybdenum/Gold (Mo/Au) bilayer TES and ion assisted thermally evaporated (IAE) Bismuth (Bi) films as radiation absorber coupled to a low-loss microstripline from Niobium (Nb) ground plane to a twin-slot antenna structure. The thermal conductance and the time constant of these devices have been measured, and are consistent with our calculations. The device exhibits a single time constant at 0.1 K of approx.160 IlS, which is compatible with readout by a high-bandwidth single SQUID or a time domain SQUID multiplexer. The effects of thermal conductance and electrothermal feedback are major determinants of the time constant, but the electronic heat capacity also plays a major role. The NEP achieved in the device described above is 2.5x10(exp -17)W(gamma)Hz. Our plan is to demonstrate a reduction of the volume in the superconducting element to 5 microns x 5 microns in films of half the thickness at Tc = 60mK. By calculation, this new geometry corresponds to an NEP reduction of two orders of magnitude to 2.5x10(exp -19)W/(gamma)Hz, with a time constant of ~130/ls

Developing a Novel Platform for Characterizing Thermoelectric Materials for Uncooled Detectors for Land Imaging Applications

Thermal land imaging (imaging at ~8-14 micron optical wavelength) is an essential tool for understanding and managing terrestrial freshwater resources. Current thermal imaging instruments employ low temperature detectors, which require cryocoolers. Consequently, cost-saving reductions in size, weight, and power can be achieved by employing uncooled detectors. One uncooled detector concept, which NASA is pursuing, is a thermopile detector with sub-micron thick doped-Si thermoelectric materials. In order to characterize the thermoelectric properties of the doped silicon, we designed and optimized a novel apparatus. This simple apparatus measures the Seebeck coefficient with thermally isolated stages and LABVIEW automation. We optimized thermal stability using PID tuning and optimized the thermal contact between the thin film samples and stages using electrically conductive springs. Utilizing our apparatus, we measured the Seebeck coefficient of 0.45 micron thick phosphorus-doped single crystal Si samples bonded to alumina substrates. Using these Seebeck coefficient measurements and four-wire electrical resistivity measurements, we determined the relationship between the thermoelectric figure of merit and dopant concentration. These characterization results for doped-Si will guide our thermopile detector design to provide an optimal and competitive detector alternative for future thermal imaging instruments

Auxiliary Components for Kilopixel Transition Edge Sensor Arrays

We have fabricated transition edge sensor bolometer focal plane arrays sensitive to mm-submillimeter (0.1-3 THz) radiation for the Atacama Cosmology Telescope (ACT), which will probe the cosmic microwave background at 0.147,0.215, and 0.279 GHz. Central to the performance of these bolometers is a set of auxiliary resistive components. Here we discuss shunt resistors, which allow for tight optimization of bolometer time constant and sensitivity. Our shunt resistors consist of AuPd strips grown atop of interdigitated superconducting MoN, wires. We can tailor the shunt resistance by altering the dimensions of the AuPd strips and the pitch and width of the MoN, wires and can fabricate over 1000 shunts on a single 4" wafer. By modeling the resistance dependence of these parameters, a variety of different 0.77 +I-0.13 mOhm shunt resistors have been fabricated. This variety includes different shunts possessing MoN, wires with wire width equal to 1.5 and 10 microns and pitch equal to 4.5 and 26 microns, respectively. Our ability to set the resistance of the shunts hints at the scalability of our design. We have also integrated a Si02 capping layer into our shunt resistor fabrication scheme, which inhibits metal corrosion and eventual degradation of the shunt. Consequently, their robustness coupled with their high packing density makes these resistive components attractive for future kilopixel detector arrays

A Path to High Efficiency Optical Coupling for HIRMES

The high-resolution mid-infrared spectrometer (HIRMES) under development for SOFIA (Stratospheric Observatory for Infrared Astronomy) is an instrument operating in the 25-122 m spectral range with a spectral resolution R= / ~100,000 and has two absorber-coupled transition edge sensor (TES) bolometric detector focal planes. We have developed novel NbTiN low stress absorber coatings which have the required optical impedance across the HIRMES operating band. The low intrinsic stress of these coatings allow for a peak-to-valley corrugation amplitude < 5 m of the 450 nm thick, 1.4 mm x 1.7 mm detector pixels. Furthermore, these coatings have a superconducting transition temperature ~ 10 K, which allows them to simultaneously serve as an absorber in the desired signal band and a rejection filter at long wavelengths. This attribute makes them especially attractive for ultrasensitive absorber-coupled bolometric detector applications, because it helps in controlling the optical loading from out-of band radiation. We also discuss a novel method for integrating a wedged reflective absorber-termination to the detector array

Fabrication of Ultrasensitive Transition Edge Sensor Bolometric Detectors for HIRMES

The high resolution mid-infrared spectrometer (HIRMES) is a high resolving power (R approx. 100,000) instrument operating in the 25-122 micron spectral range and will fly on board the Stratospheric Observatory for Far-Infrared Astronomy (SOFIA) in 2019. Central ot HIRMES are its two transition edge sensor (TES) bolometric cameras, an 8x16 detector high resolution array and a 64x16 detector low resolution array. Both types of detectors consist of MoAu TES fabricated on leg-isolated Si membranes. Whereas the high resolution detectors, with noise equivalent power (NEP) approx. 2 aW/square root of (Hz), are fabricated on 0.45 micron Si substrates, the low resolution detectors, with NEP approx. 10 aW/square root of (Hz), are fabricated on 1.40 micron Si. Here we discuss the similarities and difference in the fabrication methodologies used to realize the two types of detectors

MEMS Microshutter Array System for James Webb Space Telescope

A complex MEMS microshutter array system has been developed at NASA Goddard Space Flight Center (GSFC) for use as a multi-object aperture array for a Near-Infrared Spectrometer (NIRSpec). The NIRSpec is one of the four major instruments carried by the James Webb Space Telescope (JWST), the next generation of space telescope after the Hubble Space Telescope retires. The microshutter arrays (MSAs) are designed for the selective transmission of light with high efficiency and high contrast. It is demonstrated in Figure 1 how a MSA is used as a multiple object selector in deep space. The MSAs empower the NIRSpec instrument simultaneously collect spectra from more than 100 targets therefore increases the instrument efficiency 100 times or more. The MSA assembly is one of three major innovations on JWST and the first major MEMS devices serving observation missions in space. The MSA system developed at NASA GSFC is assembled with four quadrant fully addressable 365x171 shutter arrays that are actuated magnetically, latched and addressed electrostatically. As shown in Figure 2, each MSA is fabricated out of a 4' silicon-on-insulator (SOI) wafer using MEMS bulk-micromachining technology. Individual shutters are close-packed silicon nitride membranes with a pixel size close to 100x200 pm (Figure 3). Shutters are patterned with a torsion flexure permitting shutters to open 90 degrees with a minimized mechanical stress concentration. In order to prevent light leak, light shields are made on to the surrounding frame of each shutter to cover the gaps between the shutters and the Game (Figure 4). Micro-ribs and sub-micron bumps are tailored on hack walls and light shields, respectively, to prevent sticktion, shown in Figures 4 and 5. JWST instruments are required to operate at cryogenic temperatures as low as 35K, though they are to be subjected to various levels of ground tests at room temperature. The shutters should therefore maintain nearly flat in the entire temperature range between 35K and 300K. Through intensive numerical simulations and experimental studies, an optically opaque and electrically conductive metal-nitride thin film was selected as a coating material deposited on the shutters with the best thermal-expansion match to silicon nitride - the shutter blade thin film material. A shutter image shown in Figure 6 was taken at room temperature, presenting shutters slightly bowing down as expected. Shutters become flat when the temperature decreases to 35K. The MSAs are then bonded to silicon substrates that are fabricated out of 6" single-silicon wafers in the thickness of 2mm. The bonding is conducted using a novel single-sided indium flip-chip bonding technology. Indium bumps fabricated on a substrate are shown in Figure 7. There are 180,000 indium bumps for bonding a flight format MSA array to its substrate. Besides a MSA, each substrate houses five customer-designed ASIC (Application Specific Integrated Circuit) multiplexer/address chips for 2-dimensional addressing, twenty capacitors, two temperature sensors, numbers of resistors and all necessary interconnects, as shown in Figure 8. Complete MSA quadrant assemblies have been successfully manufactured and fully functionally tested. The assemblies have passed a series of critical reviews required by JWST in satisfying all the design specifications. The qualification tests cover programmable 2-D addressing, life tests, optical contrast tests, and environmental tests including radiation, vibration, and acoustic tests. A 2-D addressing pattern with 'ESA' letters programmed in a MSA is shown in Figure 9. The MSAs passed 1 million cycle life tests and achieved high optical contrast over 10,000. MSA teams are now making progress in final fabrication, testing and assembly (Figure 10). The delivery of flight-format MSA system is scheduled at the end of 2008 for being integrated to the focal plane of the NIRSpec detectors

Characterization of Si-Membrane TES Bolometer Arrays for the HIRMES Instrument

The High Resolution Mid-Infrared Spectrometer (HIRMES) instrument will fly onboard NASA's airborne Stratospheric Observatory for Infrared Astronomy (SOFIA) in 2019. HIRMES will provide astronomers with a unique observing window (25 122 m) for exploring the evolution of protoplanetary disks into young solar systems, and the composition of our Solar System. There are two focal plane detector arrays for the instrument: a high-resolution (/ = 100,000) 8x16 detector array with a target noise-equivalent power, NEP 3x10-18 W/Hz; and a low-resolution (/ = 2,000 19,000) 16x64 detector array with a target NEP 2x10-17 W/Hz. The detectors for both of these arrays are superconducting Mo/Au bilayer transition edge sensor (TES) bolometers on thin suspended single-crystal silicon membranes. Here we present our characterization results for the detectors in both arrays, including measurements of thermal conductance with comparison to phonon transport models, saturation power, noise, and array uniformity