A Graphene-based Hot Electron Transistor

We experimentally demonstrate DC functionality of graphene-based hot electron transistors, which we call Graphene Base Transistors (GBT). The fabrication scheme is potentially compatible with silicon technology and can be carried out at the wafer scale with standard silicon technology. The state of the GBTs can be switched by a potential applied to the transistor base, which is made of graphene. Transfer characteristics of the GBTs show ON/OFF current ratios exceeding 50.000.Comment: 18 pages, 6 figure

1200 V 4H-SiC BJTs with a Common Emitter Current Gain of 60 and Low On-resistance

This paper reports a 4H-SiC bipolar junction transistor (BJT) with a breakdown voltage (BV(CEO)) of 1200 V, a maximum current gain (beta) of 60 and the low on-resistance (R(sp-on))of 5.2 m Omega cm(2). The high gain is attributed to an improved surface passivation SiO(2) layer which was grown in N(2)O ambient in a diffusion furnace. The SiC BJTs with passivation oxide grown in N(2)O ambient show less emitter size dependence than reference SiC BJTs, with conventional SiO(2) passivation, due to a reduced surface recombination current. SiC BJT devices with an active area of 1.8 mm x 1.8 mm showed a current gain of 53 in pulsed mode and a forward voltage drop Of V(CE)=2V at I(C)=15 A (J(C)=460 A/cm(2))