129 research outputs found

    Comment on ``Analytic Structure of One-Dimensional Localization Theory: Re-Examining Mott's Law''

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    The low-frequency conductivity of a disordered Fermi gas in one spatial dimension is governed by the Mott-Berezinskii law σ(ω)ω2lnω2\sigma(\omega) \propto \omega^2 \ln \omega^2. In a recent Letter [Phys. Rev. Lett. 84, 1760 (2000)] A. O. Gogolin claimed that this law is invalid, challenging our basic understanding of disordered systems and a massive amount of previous theoretical work. We point out two calculational errors in Gogolin's paper. Once we correct them, the Mott-Berezinskii formula is fully recovered. We also present numerical results supporting the Mott-Berezinskii formula but ruling out that of Gogolin.Comment: 1 page, 1 figure, RevTeX

    Neutrality point of graphene with coplanar charged impurities

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    The ground-state and the transport properties of graphene subject to the potential of in-plane charged impurities are studied. The screening of the impurity potential is shown to be nonlinear, producing a fractal structure of electron and hole puddles. Statistical properties of this density distribution as well as the charge compressibility of the system are calculated in the leading-log approximation. The conductivity depends logarithmically on α\alpha, the dimensionless strength of the Coulomb interaction. The theory is asymptotically exact when α\alpha is small, which is the case for graphene on a substrate with a high dielectric constant.Comment: (v3) 4 pages main paper, 2 pages supplementary info, no figure

    Electronic response of graphene to linelike charge perturbations

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    The problem of electrostatic screening of a charged line by undoped or weakly doped graphene is treated beyond the linear-response theory. The induced electron density is found to be approximately doping independent, n(x)~(log x)^2/x^2, at intermediate distances x from the charged line. At larger x, twin p-n junctions may form if the external perturbation is repulsive for graphene charge carriers. The effect of such inhomogeneities on conductance and quantum capacitance of graphene is calculated. The results are relevant for transport properties of graphene grain boundaries and for local electrostatic control of graphene with ultrathin gates.Comment: Fixed typos and added reference

    Dynamics of disordered quantum Hall crystals

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    Charge density waves are thought to be common in two-dimensional electron systems in quantizing magnetic fields. Such phases are formed by the quasiparticles of the topmost occupied Landau level when it is partially filled. One class of charge density wave phases can be described as electron solids. In weak magnetic fields (at high Landau levels) solids with many particles per unit cell - bubble phases - predominate. In strong magnetic fields (at the lowest Landau level) only crystals with one particle per unit cell - Wigner crystals - can form. Experimental identification of these phases is facilitated by the fact that even a weak disorder influences their dc and ac magnetotransport in a very specific way. In the ac domain, a range of frequencies appears where the electromagnetic response is dominated by magnetophonon collective modes. The effect of disorder is to localize the collective modes and to create an inhomogeneously broadened absorption line, the pinning mode. In recent microwave experiments pinning modes have been discovered both at the lowest and at high Landau levels. We present the theory of the pinning mode for a classical two-dimensional electron crystal collectively pinned by weak impurities. We show that long-range Coulomb interaction causes a dramatic line narrowing, in qualitative agreement with the experiments.Comment: 6 pages, 3 figures. To be presented at EP2DS-15, Nara, Japan. One typo correcte

    A simple variational method for calculating energy and quantum capacitance of an electron gas with screened interactions

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    We describe a variational procedure for calculating the energy of an electron gas in which the long-range Coulomb interaction is truncated by the screening effect of a nearby metallic gate. We use this procedure to compute the quantum capacitance of the system as a function of electron density and spin polarization. The accuracy of the method is verified against published Monte-Carlo data. The results compare favorably with a recent experiment.Comment: 4 pages, 3 figure

    Feshbach resonance of heavy exciton-polaritons

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    We study interactions between polaritons formed by hybridization of excitons in a two-dimensional (2D) semiconductor with surface optical phonons or plasmons. These quasiparticles have a high effective mass and can bind into bipolaritons near a Feshbach-like scattering resonance. We analyze the phase diagram of a many-body condensate of heavy polaritons and bipolaritons and calculate their absorption and luminescence spectra, which can be measured experimentally.Comment: 11 pages, 7 figure

    Late Gas accretion onto Primordial Minihalos: a Model for Leo T, Dark Galaxies and Extragalactic High-Velocity Clouds

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    In this letter we revisit the idea of reionization feedback on dwarf galaxy formation. We show that primordial minihalos with v_cir<20 km/s stop accreting gas after reionization, as it is usually assumed, but in virtue of their increasing concentration and the decreasing temperature of the intergalactic medium as redshift decreases below z=3, they have a late phase of gas accretion and possibly star formation. We expect that pre-reionization fossils that evolved on the outskirts of the Milky Way or in isolation show a bimodal star formation history with 12 Gyr old and <10 Gyr old population of stars. Leo T fits with this scenario. Another prediction of the model is the possible existence of a population of gas rich minihalos that never formed stars. More work is needed to understand whether a subset of compact high-velocity clouds can be identified as such objects or whether an undiscovered population exists in the voids between galaxies.Comment: 5 pages, 4 figures, accepted version MNRAS 392, L4
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