Luminescence in Highly Excited InGaN/GaN Multiple Quantum Wells Grown on GaN and Sapphire Substrates

We report on high-excitation luminescence spectroscopy in In x Ga 1−x N/GaN multiple quantum wells grown by MOCVD over sapphire and bulk GaN substrates. High excitation conditions enabled us to achieve a screening of the built-in field by free carriers. This allowed for the evaluation of the influence of band potential fluctuations due to the variation in In-content on efficiency of spontaneous and stimulated emission. InGaN/GaN multiple quantum wells grown on bulk GaN substrate exhibit a significantly lower stimulated emission threshold and thus enhanced lateral emission. Transient and dynamic properties of luminescence indicate a significant reduction in compositional disorder in homoepitaxially grown structures

Алгоритм выбора точки интерконнекции распределенной генерации и ее интеграция в работу энергосистемы

В статье представлен алгоритм выбора точки интерконнекции распределенной генерации с учетом поставленных критериев. Рассмотрены основные факторы, влияющие на режимы работы энергосистемы в зависимости от точки интерконнекции источников распределенной генерации

Luminescence decay in highly excited GaN grown by hydride vapor-phase epitaxy

Contains fulltext : 112521.pdf (publisher's version ) (Open Access

Luminescence transients in highly excited GaN grown by hydride vapor-phase epitaxy

Contains fulltext : 60520.pdf (publisher's version ) (Closed access

Photoluminescence and Photoconductivity Dynamics in Semi-Insulating Epitaxial GaN Layers

The transients of fast free-carrier recombination and of multi-trapping processes due to different species of defects have been investigated by photoluminescence and by contact and microwave photoconductivity. Three distinct stages of relaxation, namely, of stimulated emission, of recombination due to point defects and capture into trapping centers associated with dislocations, and a non-exponential stage with a stretched-exponent asymptotic decay ascribed to dislocations mediated multi-trapping were distinguished by correlated examination of time-resolved photoluminescence and photoconductivity transients

Photoluminescence and Photoconductivity Dynamics in Semi-Insulating Epitaxial GaN Layers

The transients of fast free-carrier recombination and of multi-trapping processes due to different species of defects have been investigated by photoluminescence and by contact and microwave photoconductivity. Three distinct stages of relaxation, namely, of stimulated emission, of recombination due to point defects and capture into trapping centers associated with dislocations, and a non-exponential stage with a stretched-exponent asymptotic decay ascribed to dislocations mediated multi-trapping were distinguished by correlated examination of time-resolved photoluminescence and photoconductivity transients

Concentration effects on emission of bay-substituted perylene diimide derivatives in a polymer matrix

10.1016/j.dyepig.2011.09.017Dyes and Pigments9231285-1291DYPI