Jarašiūnas, K.

Karaliūnas, M.

Kato, M.

Manolis, G.

Miasojedovas, S.

Onufrijevs, P.

Ščajev, P.

English

Электронная библиотека БГУ

121 
STUDY OF OPTICAL AND PHOTOELECTRICAL PROPERTIES  
OF 3C-SiC SINGLE CRYSTALS AND HETEROSTRUCTURES  
P. Onufrijevs, P. Ščajev, M. Kato, G. Manolis, M. Karaliūnas,  
S. Miasojedovas, and K. Jarašiūnas 
Institute of Applied Research, Vilnius University, Vilnius, Lithuania 
Cubic silicon carbide (3C-SiC) with the energy band gap 2.36 eV 
(T=300K) possess relatively high electron mobility and appears as promising 
material for applications in high power and temperature electronics and de-
vices for harsh environment. We review optical techniques able to investigate 
the optical and photoelectrical properties of SiC at high injection levels. The 
excess carriers were injected by a short laser pulse and monitored by time-
resolved free-carrier absorption (FCA) and light-induced transient grating 
(LITG) techniques. We also investigated spectra of room-temperature photo-
luminecense (RTPL), as a complementary technique to reveal defect-related 
properties. We note that latter technique up to now was mainly used to study 
low-temperature photoluminescence spectra of SiC.  
We investigated thin layers of 3C-SiC, grown by VLS technique and 
thicker sublimation layers on 6H substartes, as well bulk 3C-SiC crystals 
grown by chemical vapor deposition on undulant Si. Free standing 3C-SiC 
layers were obtained after mechanically polishing and chemically etching 
away the Si substrate. High concentration of defects, e.g., microtwins, disloca-
tions and stacking faults as well unintentional doping by nitrogen impurity is 
typical for 3C polytype. 
Time-resolved FCA kinetics revealed features of linear and nonlinear car-
rier recombination rates, strongly varying with the growth techniques. Filling 
of Al or N impurity states by optical pulse and their subsequent thermal recov-
ery rate was studied by differential absorption technique in microsecond time 
scale. LITG technique provided carrier mobilites in a wide temperature range 
(10 - 800 K). PL spectra of bulk 3C-SiC revealed edge emission band at 2.28 
eV and unexpected broad band at 3.20 eV (above Eg), which might be attrib-
uted to the emission from 4H-SiC stacking faults. The properties of both free 
standing 3C-SiC surfaces were analyzed.  
Acknowledgement. The authors acknowledge support by the European Commission 
Contract No. MRTN-CT-2006-35735. 


Study of optical and photoelectrical properties of 3C-SiC single crystals and heterostructures

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Study of optical and photoelectrical properties of 3C-SiC single crystals and heterostructures

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