Longitudinal RNA-Seq analysis of acute and chronic neurogenic skeletal muscle atrophy.

Skeletal muscle is a highly adaptable tissue capable of changes in size, contractility, and metabolism according to functional demands. Atrophy is a decline in mass and strength caused by pathologic loss of myofibrillar proteins, and can result from disuse, aging, or denervation caused by injury or peripheral nerve disorders. We provide a high-quality longitudinal RNA-Seq dataset of skeletal muscle from a cohort of adult C57BL/6J male mice subjected to tibial nerve denervation for 0 (baseline), 1, 3, 7, 14, 30, or 90 days. Using an unbiased genomics approach to identify gene expression changes across the entire longitudinal course of muscle atrophy affords the opportunity to (1) establish acute responses to denervation, (2) detect pathways that mediate rapid loss of muscle mass within the first week after denervation, and (3) capture the molecular phenotype of chronically atrophied muscle at a stage when it is largely resistant to recovery

Interplay of Superconductivity and Spin-Dependent Disorder

The finite temperature phase diagram for the 2D attractive fermion Hubbard model with spin-dependent disorder is considered within Bogoliubov-de Gennes mean field theory. Three types of disorder are studied. In the first, only one species is coupled to a random site energy; in the second, the two species both move in random site energy landscapes which are of the same amplitude, but different realizations; and finally, in the third, the disorder is in the hopping rather than the site energy. For all three cases we find that, unlike the case of spin-symmetric randomness, where the energy gap and average order parameter do not vanish as the disorder strength increases, a critical disorder strength exists separating distinct phases. In fact, the energy gap and the average order parameter vanish at distinct transitions, $V_{c}^{\rm gap}$ and $V_{c}^{\rm op}$, allowing for a gapless superconducting (gSC) phase. The gSC phase becomes smaller with increasing temperature, until it vanishes at a temperature $T^{\ast}$.Comment: 9 pages, 7 figure

Cost effective power amplifiers for pulsed NMR sensors

Sensors that measure magnetic resonance relaxation times are increasingly finding applications in areas such as food and drink authenticity and waste water treatment control. Modern permanent magnets are used to provide the static magnetic field in many commercial instruments and advances in electronics, such as field programmable gate arrays, have provided lower cost console electronics for generating and detecting the pulse sequence. One area that still remains prohibitively expensive for many sensor applications of pulsed NMR is the requirement for a high frequency power amplifier. With many permanent magnet sensors providing a magnetic field in the 0.25T to 0.5T range, a power amplifier that operates in the 10MHz to 20MHz rage is required. In this work we demonstrate that some low cost commercial amplifiers can be used, with minor modification, to operate as pulsed NMR power amplifiers. We demonstrate two amplifier systems, one medium power that can be constructed for less than Euro 100 and a second much high power system that produces comparable results to commercial pulse amplifiers that are an order of magnitude more expensive. Data is presented using both the commercial NMR MOUSE and a permanent magnet system used for monitoring the clog state of constructed wetlands

miR-375 gene dosage in pancreatic β-cells: implications for regulation of β-cell mass and biomarker development

MicroRNAs play a crucial role in the regulation of cell growth and differentiation. Mice with genetic deletion of miR-375 exhibit impaired glycemic control due to decreased β-cell and increased α-cell mass and function. The relative importance of these processes for the overall phenotype of miR-375KO mice is unknown. Here, we show that mice overexpressing miR-375 exhibit normal β-cell mass and function. Selective re-expression of miR-375 in β-cells of miR-375KO mice normalizes both, α- and β-cell phenotypes as well as glucose metabolism. Using this model, we also analyzed the contribution of β-cells to the total plasma miR-375 levels. Only a small proportion (≈1 %) of circulating miR-375 originates from β-cells. Furthermore, acute and profound β-cell destruction is sufficient to detect elevations of miR-375 levels in the blood. These findings are supported by higher miR-375 levels in the circulation of type 1 diabetes (T1D) subjects but not mature onset diabetes of the young (MODY) and type 2 diabetes (T2D) patients. Together, our data support an essential role for miR-375 in the maintenance of β-cell mass and provide in vivo evidence for release of miRNAs from pancreatic β-cells. The small contribution of β-cells to total plasma miR-375 levels make this miRNA an unlikely biomarker for β-cell function but suggests a utility for the detection of acute β-cell death for autoimmune diabetes

Field Effect Transistor Nanosensor for Breast Cancer Diagnostics

Silicon nanochannel field effect transistor (FET) biosensors are one of the most promising technologies in the development of highly sensitive and label-free analyte detection for cancer diagnostics. With their exceptional electrical properties and small dimensions, silicon nanochannels are ideally suited for extraordinarily high sensitivity. In fact, the high surface-to-volume ratios of these systems make single molecule detection possible. Further, FET biosensors offer the benefits of high speed, low cost, and high yield manufacturing, without sacrificing the sensitivity typical for traditional optical methods in diagnostics. Top down manufacturing methods leverage advantages in Complementary Metal Oxide Semiconductor (CMOS) technologies, making richly multiplexed sensor arrays a reality. Here, we discuss the fabrication and use of silicon nanochannel FET devices as biosensors for breast cancer diagnosis and monitoring

Investigation of Mobility Limiting Mechanisms in Undoped Si/SiGe Heterostructures

We perform detailed magnetotransport studies on two-dimensional electron gases (2DEGs) formed in undoped Si/SiGe heterostructures in order to identify the electron mobility limiting mechanisms in this increasingly important materials system. By analyzing data from 26 wafers with different heterostructure growth profiles we observe a strong correlation between the background oxygen concentration in the Si quantum well and the maximum mobility. The highest quality wafer supports a 2DEG with a mobility of 160,000 cm^2/Vs at a density 2.17 x 10^11/cm^2 and exhibits a metal-to-insulator transition at a critical density 0.46 x 10^11/cm^2. We extract a valley splitting of approximately 150 microeV at a magnetic field of 1.8 T. These results provide evidence that undoped Si/SiGe heterostructures are suitable for the fabrication of few-electron quantum dots.Comment: Related papers at http://pettagroup.princeton.ed