Bipolar "table with legs" resistive switching in epitaxial perovskite heterostructures

We report the experimental investigation of bipolar resistive switching with "table with legs" shaped hysteresis switching loops in epitaxial perovskite GdBaCo O /LaNiO bilayers deposited by pulsed laser deposition. The possibility of varying the resistivity of GdBaCo O by changing its oxygen content allowed engineering this perovskite heterostructure with controlled interfaces creating two symmetric junctions. It has been proved that the resistance state of the device can be reproducibly varied by both continuous voltage sweeps and by electrical pulses. The symmetric devices show slightly non-symmetric resistance profiles, which can be explained by a valence change resistive switching model, and presented promising multilevel properties required for novel memories and neuromorphic computing

Experimental and simulation investigation of the out-of-equilibrium phenomena on the pseudo-MOSFET configuration under transient linear voltage ramps

International audienceThe pseudo-MOSFET configuration is an electrical characterization technique developed for silicon-on-insulator (SOI) wafers. The wide variety of experiments that have been performed to date have also extended recently in the study of out-of-equilibrium phenomena for bio-sensing applications. However, the lack of a full understanding of the ohmic contact behaviour between the probes and the low doped silicon film results in simulation inconsistencies. This work proposes a simulated device structure that is capable of reproducing the behaviour of the device and further extends the experiments into large-signal linear ramps which are also reproduced through simulations

Low temperature measurements on organic thin film transistors

session poster (L.1.25)International audienc

Correlation between the Dimensions and Piezoelectric Properties of ZnO Nanowires Grown by PLI-MOCVD with Different Flow Rates

International audienceZinc oxide nanowires (ZnO NWs) have gained considerable attention in the field of piezoelectricity in the past two decades. However, the impact of growth-process conditions on their dimensions and polarity, as well as the piezoelectric properties, has not been fully explored, specifically when using pulsed-liquid injection metal-organic chemical vapor deposition (PLI-MOCVD). In this study, we investigate the influence of the O2 gas and DEZn solution flow rates on the formation process of ZnO NWs and their related piezoelectric properties. While the length and diameter of ZnO NWs were varied by adjusting the flow-rate conditions through different growth regimes limited either by the O2 gas or DEZn reactants, their polarity was consistently Zn-polar, as revealed by piezoresponse force microscopy. Moreover, the piezoelectric coefficient of ZnO NWs exhibits a strong correlation with their length and diameter. The highest mean piezoelectric coefficient of 3.7 pm/V was measured on the ZnO NW array with the length above 800 nm and the diameter below 65 nm. These results demonstrate the ability of the PLI-MOCVD system to modify the dimensions of ZnO NWs, as well as their piezoelectric properties

Study of Hot-Carrier-Induced Traps in Nanoscale UTBB FD-SOI MOSFETs by Low-Frequency Noise Measurements

International audienceThe hot carrier (HC)-induced traps in nanoscale fully depleted ultrathin body and buried oxide nMOSFETs are investigated by low-frequency noise (LFN) measurements in the frequency and time domains. The measured noise spectra are composed of 1/f and Lorentzian-type components. The Lorentzian noise is due to either generation-recombination noise or random telegraph noise (RTN). Based on the LFN results, the effect of the HC stress on fully depleted silicon-on-insulator MOSFETs is investigated after short- and long-time stress. The capture and emission time constants responsible for the RTN noise were calculated as the average duration time of the high/low drain current state, respectively. Analysis of RTN traps detected in fresh and HC-stressed devices indicates that the RTN amplitude is uncorrelated to the trap time constants, i.e., the impact of the trap depth from the interface is masked by that of the trap location over the channel. The overall results lead to an analytical expression for the RTN amplitude, enabling to predict the RTN changes from the subthreshold to the above-threshold region

Modelling and Development of 4H-SiC Nanowire/Nanoribbon Biosensing FET Structures

A SiCNWFET device serving as a biosensor was designed and simulated using Silvaco ATLAS device simulation software. The performance of the designed device in charges sensing was investigated. The device shows the ability to recognize different interface charge values ranging from-1.10E11 to-5.10E12 cm -2 applied on the surface of the silicon carbide nanowire channel to simulate target charge biomolecules that bound to the biosensor. A significant change in the output current is observed due to the presence of different values of fixed interface charge densities. An optimum, according to the TCAD simulation, the 4H-SiC epitaxial structure has been grown. The designed device was fully fabricated on this structure and it exhibited acceptable electrical characteristics

Low temperature behavior of FD-SOI MOSFETs from micro- to nano-meter channel lengths

International audienc

Temperature dependence of the electromechanical characteristics of superconducting RF‐MEMS switches

International audienceMicro-electro-mechanical-system (MEMS) switches are very interesting for high frequency applications. These switches are electrostatically actuated micromechanical meanders-suspended bridges. In the field of millimeter wave radio astronomy, cryogenic circuits are frequently made of superconducting niobium and elements combining these circuits with MEMS devices of compatible technologies are of high potential for new applications. The initial profile of the bridge has been numerically simulated. This suggested the influence of possible residual stress in Nb thin films on the behavior of MEMS. A study of the capacitance variation as a function of the applied voltage has been performed for this type of MEMS at room and low temperatures down to 150K. It is associated with a mechanical study of the vibrating modes of the structure and with X-rays characterization of the Nb film. An identification of specific sets of geometric parameters to reach good performance and temperature stability was done

Parameter Extraction and Compact Modeling of OTFTs From 150 K to 350 K

International audienc

Resistive Switching in GbBaCo2O5?/LaNiO3 perovskite thin film devices

Session poster (R.P1.42)International audienc