How PV systems can be cost-competitive for mobile BTS in remote areas of Algeria

Solar electricity for telecom infrastructure has became one of the main contributors of electrical energy to the energy system in the future, but solar technology needs support to find its way to the market. Since photovoltaic (PV) electricity always involves  very high costs compared to electricity from other sources, a striking question is: how can PVs achieve competitiveness? There are  different strategies for promoting applied PV electricity generation around the world. Here, we simulated and designed a 40 KWp injected PV power, to evaluate the energy of the incident photon flux, that produced by PV panels and the energy injected into the electricity grid, and judge whether the installation is profitable, and if the technology is economical. The results reveal that the site of Tamanrasset (in the extreme south of Algeria) could produce an annual energy production 73879 kWh, which justify the reason the German Academy has chosen such site for the famous desert project, lastly launched between the two countries

Nanostructured AlGaAsSb materials for thermophotovoltaic solar cells applications

Thermophotovoltaic conversion using heat to generate electricity in photovoltaic cells based on the detraction of thermal radiation suffers from many engineering challenges. The focus of this paper is to study the nanostructure of AlGaAsSb for thermophotovoltaic energy conversion using lattice-matched heterostructures of GaSb-based materials in order to overcome the current challenges. The XAFS spectroscopy technique was used to analyze electronic structures and optical properties of GaSb, (Al, In) GaSbAs. The XAFS spectroscopy analysis showed a powerful decay at peak intensity that reveals to be related to a loss in Sb amount and light As atoms replaced in Sb atoms by 25%. Moreover, it was found that Al/In doped samples have highly symmetric data features (same atomic species substitution). The narrow direct bandgap energy, Eg of Al0.125Ga0.875Sb0.75As0.25 material raised (0.4–0.6 eV) compared to conventional photovoltaic cell bandgap energy (which is generally less than 0.4 eV) with weak absorption coefficients. The thermoelectric properties of AlGaAsSb computed via Botlztrap code showed that the electrons made up the majority of the charge carriers in AlGaAsSb. This nanostructure material exhibited a higher and acceptable figure of merit and demonstrated a promising thermoelectric material for solar thermophotovoltaic applications

Ab initio LSDA+U Study of Optical Properties of RVO4 (R = Eu, Ho, Lu) Compounds

<div><p>A first principles investigation at the pressure 7 GPa of the optical properties of RVO4 (R= Eu, Ho, Lu) orthovanadates in the framework of the density functional theory (DFT) using the linearized-augmented plane-wave method is reported in order to predict new optical materials for continuous-wave lasers. The electronic structure of all orthovanadates is studied in zircon-type structure. DFT+U (Hubbard parameter found to be 8eV) calculations predict an antiferromagnetic and nonmagnetic insulating ground states -at ambient conditions- for (EuVO4, HoVO4) and LuVO4, respectively. The results show that these vanadates can be good candidates for laser-host materials, and indicate the possibility of material design to optimize the laser-host materials. The rare-earth ion-doped crystals could enhance the laser performances and improve the isolation characteristic of the optical isolators.</p></div