A second-order class-D audio amplifier

Class-D audio amplifiers are particularly efficient, and this efficiency has led to their ubiquity in a wide range of modern electronic appliances. Their output takes the form of a high-frequency square wave whose duty cycle (ratio of on-time to off-time) is modulated at low frequency according to the audio signal. A mathematical model is developed here for a second-order class-D amplifier design (i.e., containing one second-order integrator) with negative feedback. We derive exact expressions for the dominant distortion terms, corresponding to a general audio input signal, and confirm these predictions with simulations. We also show how the observed phenomenon of “pulse skipping” arises from an instability of the analytical solution upon which the distortion calculations are based, and we provide predictions of the circumstances under which pulse skipping will take place, based on a stability analysis. These predictions are confirmed by simulations

Pioglitazone versus Rosiglitazone: Effects on Lipids, Lipoproteins, and Apolipoproteins in Head-to-Head Randomized Clinical Studies

Peroxisome proliferator-activated receptors (PPARs) play an important role in regulating both glucose and lipid metabolism. Agonists for both PPARγ and PPARγ have been used to treat dyslipidemia and hyperglycemia, respectively. In addition to affecting glucose metabolism, PPARγ agonists also regulate lipid metabolism. In this review, we will focus on the randomized clinical trials that directly compared the lipid effects of the thiazolidinedione class of PPARγ agonists, pioglitazone and rosiglitazone, head-to-head either as monotherapy or in combination with other lipid-altering or glucose-lowering agent

The journey continues in Clinical Diabetes and Endocrinology

https://deepblue.lib.umich.edu/bitstream/2027.42/145188/1/40842_2018_Article_67.pd

How Bad is Single-Path Routing

This paper investigates the network performance loss of using only single-path routing when multiple paths are available. The performance metric is the aggregate utility achieved by the joint optimization of congestion control and routing. As computing the exact loss for a general network topology is NP-hard, we develop analytical bounds on this "cost of not splitting". Our bound is independent of the number of source-destination pairs when the latter one is larger than the number of links in a network. We also propose a vertex projection method and combine it with branch-and-bound to provide progressively tighter bounds on the performance loss. Numerical examples are used to show the effectiveness of our approximation technique

Enabling Thin and Flexible Solid-State Composite Electrolytes by the Scalable Solution Process

All solid-state batteries (ASSBs) have the potential to deliver higher energy densities, wider operating temperature range, and improved safety compared with today's liquid-electrolyte-based batteries. However, of the various solid-state electrolyte (SSE) classes - polymers, sulfides, or oxides - none alone can deliver the combined properties of ionic conductivity, mechanical, and chemical stability needed to address scalability and commercialization challenges. While promising strategies to overcome these include the use of polymer/oxide or sulfide composites, there is still a lack of fundamental understanding between different SSE-polymer-solvent systems and its selection criteria. Here, we isolate various SSE-polymer-solvent systems and study their molecular level interactions by combining various characterization tools. With these findings, we introduce a suitable Li7P3S11SSE-SEBS polymer-xylene solvent combination that significantly reduces SSE thickness (∼50 μm). The SSE-polymer composite displays high room temperature conductivity (0.7 mS cm-1) and good stability with lithium metal by plating and stripping over 2000 h at 1.1 mAh cm-2. This study suggests the importance of understanding fundamental SSE-polymer-solvent interactions and provides a design strategy for scalable production of ASSBs

Superconductivity and electronic fluctuations in Ba1−xKxFe2As2 studied by Raman scattering

Using polarization-resolved electronic Raman scattering we study underdoped, optimally doped, and overdoped Ba1−xKxFe2As2 samples in the normal and superconducting states. We show that low-energy nematic fluctuations are universal for all studied doping ranges. In the superconducting state, we observe two distinct superconducting pair-breaking peaks corresponding to one large and one small superconducting gap. In addition, we detect a collective mode below the superconducting transition in the B2g channel and determine the evolution of its binding energy with doping. Possible scenarios are proposed to explain the origin of the in-gap collective mode. In the superconducting state of the underdoped regime, we detect a reentrance transition below which the spectral background changes and the collective mode vanishes

Universal conductance fluctuations and phase-coherent transport in a semiconductor Bi2_2O2_2Se nanoplate with strong spin-orbit interaction

We report on phase-coherent transport studies of a Bi$_2$O$_2$Se nanoplate and on observation of universal conductance fluctuations and spin-orbit interaction induced reduction in fluctuation amplitude in the nanoplate. Thin-layered Bi$_2$O$_2$Se nanoplates are grown by chemical vapor deposition (CVD) and transport measurements are made on a Hall-bar device fabricated from a CVD-grown nanoplate. The measurements show weak antilocalization at low magnetic fields at low temperatures, as a result of spin-orbit interaction, and a crossover toward weak localization with increasing temperature. Temperature dependences of characteristic transport lengths, such as spin relaxation length, phase coherence length, and mean free path, are extracted from the low-field measurement data. Universal conductance fluctuations are visible in the low-temperature magnetoconductance over a large range of magnetic fields and the phase coherence length extracted from the autocorrelation function is in consistence with the result obtained from the weak localization analysis. More importantly, we find a strong reduction in amplitude of the universal conductance fluctuations and show that the results agree with the analysis assuming strong spin-orbit interaction in the Bi$_2$O$_2$Se nanoplate.Comment: 11 pages, 4 figures, supplementary material

Strong spin-orbit interaction and magnetotransport in semiconductor Bi2_2O2_2Se nanoplates

Semiconductor Bi$_2$O$_2$Se nanolayers of high crystal quality have been realized via epitaxial growth. These two-dimensional (2D) materials possess excellent electron transport properties with potential application in nanoelectronics. It is also strongly expected that the 2D Bi$_2$O$_2$Se nanolayers could be of an excellent material platform for developing spintronic and topological quantum devices, if the presence of strong spin-orbit interaction in the 2D materials can be experimentally demonstrated. Here, we report on experimental determination of the strength of spin-orbit interaction in Bi$_2$O$_2$Se nanoplates through magnetotransport measurements. The nanoplates are epitaxially grown by chemical vapor deposition and the magnetotransport measurements are performed at low temperatures. The measured magnetoconductance exhibits a crossover behavior from weak antilocalization to weak localization at low magnetic fields with increasing temperature or decreasing back gate voltage. We have analyzed this transition behavior of the magnetoconductance based on an interference theory which describes the quantum correction to the magnetoconductance of a 2D system in the presence of spin-orbit interaction. Dephasing length and spin relaxation length are extracted from the magnetoconductance measurements. Comparing to other semiconductor nanostructures, the extracted relatively short spin relaxation length of ~150 nm indicates the existence of strong spin-orbit interaction in Bi$_2$O$_2$Se nanolayers.Comment: 14 pages, 4 figures, and 5 pages of Supplementary Material