Terahertz hot electron bolometer waveguide mixers for GREAT

Supplementing the publications based on the first-light observations with the German Receiver for Astronomy at Terahertz frequencies (GREAT) on SOFIA, we present background information on the underlying heterodyne detector technology. We describe the superconducting hot electron bolometer (HEB) detectors that are used as frequency mixers in the L1 (1400 GHz), L2 (1900 GHz), and M (2500 GHz) channels of GREAT. Measured performance of the detectors is presented and background information on their operation in GREAT is given. Our mixer units are waveguide-based and couple to free-space radiation via a feedhorn antenna. The HEB mixers are designed, fabricated, characterized, and flight-qualified in-house. We are able to use the full intermediate frequency bandwidth of the mixers using silicon-germanium multi-octave cryogenic low-noise amplifiers with very low input return loss. Superconducting HEB mixers have proven to be practical and sensitive detectors for high-resolution THz frequency spectroscopy on SOFIA. We show that our niobium-titanium-nitride (NbTiN) material HEBs on silicon nitride (SiN) membrane substrates have an intermediate frequency (IF) noise roll-off frequency above 2.8 GHz, which does not limit the current receiver IF bandwidth. Our mixer technology development efforts culminate in the first successful operation of a waveguide-based HEB mixer at 2.5 THz and deployment for radioastronomy. A significant contribution to the success of GREAT is made by technological development, thorough characterization and performance optimization of the mixer and its IF interface for receiver operation on SOFIA. In particular, the development of an optimized mixer IF interface contributes to the low passband ripple and excellent stability, which GREAT demonstrated during its initial successful astronomical observation runs.Comment: Accepted for publication in A&A (SOFIA/GREAT special issue

Superconducting 4-8-GHz Hybrid Assembly for 2SB Cryogenic THz Receivers

We present here the design and characterization of an intermediate frequency (IF) assembly comprising a compact 90 hybrid chip (coupled line coupler - Lange coupler- coupled line coupler), two bias-T circuits for biasing the superconductor-insulator-superconductor (SIS) mixers, and two transmission-line circuits. Specifically, the miniaturized three-section hybrid chip fabricated using thin-film technology utilizes superconducting Niobium (Nb) transmission lines, air bridges to connect the fingers of the Lange coupler (middle section), and is complemented with two bias-T circuits with integrated MIM capacitors. The assembly was designed to ensure amplitude and phase imbalances better than 0.6 dB and +/- 2 degrees, respectively. Experimental verification of the assembly at 4 K shows good agreement between the measurements and simulations with amplitude imbalance of 0.5 dB and maximum phase imbalance of +/- 2 degrees. The ALMA band-5 (163-211 GHz) receiver will include such assembly. The receiver tests shows sideband rejection ratio better than 15 dB over the entire RF band, i.e., a systematic improvement of 3-9 dB as compared with the previously reported results

Ultra-thin film NbN depositions for HEB heterodyne mixer on Si-substrates

The key of improving hot-electron bolometer (HEB) mixer performance lies inevitably in the quality of ultra-thin NbN films itself. This work presents a thorough investigation of crucial process parameters of NbN films deposited by means of reactive DC-sputtering on Si-substrates at elevated temperatures up to 750°C. The polycrystalline NbN films with thickness of 4 to 10nm were characterized by DC resistivity measurements, ellipsometry and high resolution transmission electron microscopy (HRTEM) in order to confirm thickness and film structure. Since the macroscopic properties such as critical temperature, thickness as well as the transition width to the superconducting state are directly linked to HEB mixer noise temperature and IF bandwidth, a set of experiments were conducted to enhance aforementioned properties. We considered deposition temperature, RF biasing, nitrogen and argon partial and total pressure during deposition as major process variable parameters. Careful optimization of the deposition conditions allowed setting up a process resulting in high-quality NbN ultra-thin films with thickness of 5.5nm exhibiting Tc of 10.5K. Moreover, the transition width could be kept as low as 1.4K. The produced films were stored at ambient conditions and re-characterized over a period of 4 month without measurable degradation

Terahertz components packaging using integrated waveguide technology

We present an integrated waveguide based packaging solution compatible with different THz component technologies, both for room temperature and cryogenic operations, employing space-qualified wire-bonding for electrical contacts. The proposed waveguide packaging relies on the combination of all-metal micro-machined THz waveguide and active component chip layouts suitable for the realization of systems from 200 up to 5000 GHz. It provides possibility of making 3-dimensional structures via facilitating of multi-level (layered) designs. The surface roughness of the fabricated THz waveguide structure was demonstrated to be 20 nm, while a 2 μm alignment accuracy of the active component chip was verified. \ua9 2011 IEEE

A Technology Demonstrator for 1.6–2.0 THz Waveguide HEB Receiver with a Novel Mixer Layout

In this paper, we present our studies on a technology demonstrator for a balanced waveguide hot-electron bolometer (HEB) mixer operating in the 1.6–2.0 THz band. The design employs a novel layout for the HEB mixer combining several key technologies: all-metal THz waveguide micromachining, ultra-thin NbN film deposition and a micromachining of a silicon-on-insulator (SOI) substrate to manufacture the HEB mixer. In this paper, we present a novel mixer layout that greatly facilitates handling and mounting of the mixer chip via self-aligning as well as provides easy electrical interfacing. In our opinion, this opens up a real prospective for building multi-pixel waveguide THz receivers. Such receivers could be of interest for SOFIA, possible follow up of the Herschel HIFI, and even for ground based telescopes yet over limited periods of time with extremely dry weather (PWV less than 0.1 mm)

Electronic Structure Shift of Deep Nanoscale Silicon by SiO2_2- vs. Si3_3N4_4-Embedding as Alternative to Impurity Doping

Conventional impurity doping of deep nanoscale silicon (dns-Si) used in ultra large scale integration (ULSI) faces serious challenges below the 14 nm technology node. We report on a new fundamental effect in theory and experiment, namely the electronic structure of dns-Si experiencing energy offsets of ca. 1 eV as a function of SiO$_2$- vs. Si$_3$N$_4$-embedding with a few monolayers (MLs). An interface charge transfer (ICT) from dns-Si specific to the anion type of the dielectric is at the core of this effect and arguably nested in quantum-chemical properties of oxygen (O) and nitrogen (N) vs. Si. We investigate the size up to which this energy offset defines the electronic structure of dns-Si by density functional theory (DFT), considering interface orientation, embedding layer thickness, and approximants featuring two Si nanocrystals (NCs); one embedded in SiO$_2$ and the other in Si$_3$N$_4$. Working with synchrotron ultraviolet photoelectron spectroscopy (UPS), we use SiO$_2$- vs. Si$_3$N$_4$-embedded Si nanowells (NWells) to obtain their energy of the top valence band states. These results confirm our theoretical findings and gauge an analytic model for projecting maximum dns-Si sizes for NCs, nanowires (NWires) and NWells where the energy offset reaches full scale, yielding to a clear preference for electrons or holes as majority carriers in dns-Si. Our findings can replace impurity doping for n/p-type dns-Si as used in ultra-low power electronics and ULSI, eliminating dopant-related issues such as inelastic carrier scattering, thermal ionization, clustering, out-diffusion and defect generation. As far as majority carrier preference is concerned, the elimination of those issues effectively shifts the lower size limit of Si-based ULSI devices to the crystalization limit of Si of ca. 1.5 nm and enables them to work also under cryogenic conditions.Comment: 14 pages, 17 Figures with a total 44 graph

Waveguide-to-substrate transition based on unilateral substrateless finline structure: Design, fabrication, and characterization

We report on a novel waveguide-to-substrate transition with prospective use for broadband mixer design. The transition employs a substrateless finline, i.e., a unilateral finline structure with the substrate removed between the fins. This distinctive feature diminishes the overall insertion loss and facilitates matching with the waveguide. The transition is designed on a thin silicon substrate covered by a superconducting niobium thin layer. An auxiliary Au layer situated on top of the Nb layer provides grounding for the fins and facilitates the mounting process in the split-block waveguide mount. Aiming to compare simulations with measurements, a back-to-back transition arrangement for the 211-373 GHz frequency band was designed, fabricated, and characterized at cryogenic temperatures. The simulation results for the back-to-back structure show an insertion loss of less than 0.6 dB in the whole band, i.e., 0.3 dB per transition. Furthermore, a remarkable fractional bandwidth of 55% with a return loss better than 15 dB is predicted. Experimental verification shows consistent results with simulations

Frequency Multiplier Based on Distributed Superconducting Tunnel Junctions: Theory, Design, and Characterization

In this paper, we present the analysis, design, and characterization of the first frequency multiplier using distributed superconductor–insulator–superconductor (SIS) junctions. We derived analytical expressions describing the properties of the distributed SIS junction as a frequency multiplier. The modeling of the distributed SIS junctions shows that high conversion efficiency can be achieved when used as the multiplier. The measured output power generated by such multiplier employing the distributed SIS junction at the second harmonic of the input frequency is in good agreement with the model. Furthermore, the frequency multiplier based on the distributed SIS junction for the first time was able to pump an SIS mixer. The multiplication efficiency of the distributed SIS junction is 15–30% for a fractional bandwidth of 10% with excellent spectral line purity. The –3 dB line width of the multiplied signal is 1 Hz, which was limited by the resolution bandwidth of the spectrum analyzer. The results attained in this paper show that the distributed SIS junction frequency multiplier has considerable future potential, and could possibly be used in LO source in single-end and multipixel SIS mixer receivers

Millimeter-Wave Wideband Waveguide Power Divider with Improved Isolation between Output Ports

We present a novel compact wideband waveguide T-junction power divider especially suited for mm-wave and THz frequencies. It incorporates substrate-based elements into a waveguide structure to provide the output port\u27s isolation and matching. The internal port is introduced at the apex of the T-junction formed as an E-probe on a substrate. This facilitates efficient coupling of the reflected energy from the output port to a novel thin-film-based resistive termination integrated with the E-probe onto the same substrate and fabricated by means of thin-film technology. A power divider was designed, simulated, and fabricated for the frequency band 150-220 GHz, to experimentally verify the theoretical and simulated performance. The results showed excellent agreement between the simulations and measurements with the devices demonstrating a remarkable return loss of 20 dB for both the input and output ports for a three-port device with equal split and isolation better than 17 dB between the output ports. Furthermore, the measured insertion loss is less than 0.3 dB and the amplitude and phase imbalance are 0.15 dB and 0\ub0, respectively. Moreover, the divider\u27s remarkable tolerance to the dimensions and sheet resistance of the resistive material of the built-in absorbing load, makes the device a very practical component for mm-wave and THz systems, in particular radio-astronomy receivers