4,580 research outputs found
Measurement of the energy dependence of phase relaxation by single electron tunneling
Single electron tunneling through a single impurity level is used to probe
the fluctuations of the local density of states in the emitter. The energy
dependence of quasi-particle relaxation in the emitter can be extracted from
the damping of the fluctuations of the local density of states (LDOS). At
larger magnetic fields Zeeman splitting is observed.Comment: 2 pages, 4 figures; 25th International Conference on the Physics of
Semiconductors, Osaka, Japan, September 17-22, 200
Electron release of rare gas atom clusters under an intense laser pulse
Calculating the energy absorption of atomic clusters as a function of the
laser pulse length we find a maximum for a critical . We show that
can be linked to an optimal cluster radius . The existence of this
radius can be attributed to the enhanced ionization mechanism originally
discovered for diatomic molecules. Our findings indicate that enhanced
ionization should be operative for a wide class of rare gas clusters. From a
simple Coulomb explosion ansatz, we derive an analytical expression relating
the maximum energy release to a suitably scaled expansion time which can be
expressed with the pulse length .Comment: 4 pages, 5 figure
Energy spectrum and Landau levels in bilayer graphene with spin-orbit interaction
We present a theoretical study of the bandstructure and Landau levels in
bilayer graphene at low energies in the presence of a transverse magnetic field
and Rashba spin-orbit interaction in the regime of negligible trigonal
distortion. Within an effective low energy approach (L\"owdin partitioning
theory) we derive an effective Hamiltonian for bilayer graphene that
incorporates the influence of the Zeeman effect, the Rashba spin-orbit
interaction, and inclusively, the role of the intrinsic spin-orbit interaction
on the same footing. Particular attention is spent to the energy spectrum and
Landau levels. Our modeling unveil the strong influence of the Rashba coupling
in the spin-splitting of the electron and hole bands. Graphene
bilayers with weak Rashba spin-orbit interaction show a spin-splitting linear
in momentum and proportional to , but scales inversely proportional
to the interlayer hopping energy . However, at robust spin-orbit
coupling the energy spectrum shows a strong warping behavior near
the Dirac points. We find the bias-induced gap in bilayer graphene to be
decreasing with increasing Rashba coupling, a behavior resembling a topological
insulator transition. We further predict an unexpected assymetric
spin-splitting and crossings of the Landau levels due to the interplay between
the Rashba interaction and the external bias voltage. Our results are of
relevance for interpreting magnetotransport and infrared cyclotron resonance
measurements, including also situations of comparatively weak spin-orbit
coupling.Comment: 25 pages, 5 figure
Symmetry of boundary conditions of the Dirac equation for electrons in carbon nanotubes.
We consider the effective mass model of spinless electrons in single wall carbon nanotubes that is equivalent to the Dirac equation for massless fermions. Within this framework we derive all possible energy independent hard wall boundary conditions that are applicable to metallic tubes. The boundary conditions are classified in terms of their symmetry properties and we demonstrate that the use of different boundary conditions will result in varying degrees of valley degeneracy breaking of the single particle energy spectrum
Gate-tunable bandgap in bilayer graphene
The tight-binding model of bilayer graphene is used to find the gap between
the conduction and valence bands, as a function of both the gate voltage and as
the doping by donors or acceptors. The total Hartree energy is minimized and
the equation for the gap is obtained. This equation for the ratio of the gap to
the chemical potential is determined only by the screening constant. Thus the
gap is strictly proportional to the gate voltage or the carrier concentration
in the absence of donors or acceptors. In the opposite case, where the donors
or acceptors are present, the gap demonstrates the asymmetrical behavior on the
electron and hole sides of the gate bias. A comparison with experimental data
obtained by Kuzmenko et al demonstrates the good agreement.Comment: 6 pages, 5 figure
Magnetotransport Properties of Quasi-Free Standing Epitaxial Graphene Bilayer on SiC: Evidence for Bernal Stacking
We investigate the magnetotransport properties of quasi-free standing
epitaxial graphene bilayer on SiC, grown by atmospheric pressure graphitization
in Ar, followed by H intercalation. At the charge neutrality point the
longitudinal resistance shows an insulating behavior, which follows a
temperature dependence consistent with variable range hopping transport in a
gapped state. In a perpendicular magnetic field, we observe quantum Hall states
(QHSs) both at filling factors () multiple of four (), as
well as broken valley symmetry QHSs at and . These results
unambiguously show that the quasi-free standing graphene bilayer grown on the
Si-face of SiC exhibits Bernal stacking.Comment: 12 pages, 5 figure
High On/Off Ratios in Bilayer Graphene Field Effect Transistors Realized by Surface Dopants
The unique property of bilayer graphene to show a band gap tunable by
external electrical fields enables a variety of different device concepts with
novel functionalities for electronic, optoelectronic and sensor applications.
So far the operation of bilayer graphene based field effect transistors
requires two individual gates to vary the channel's conductance and to create a
band gap. In this paper we report on a method to increase the on/off ratio in
single gated bilayer graphene field effect transistors by adsorbate doping. The
adsorbate dopants on the upper side of the graphene establish a displacement
field perpendicular to the graphene surface breaking the inversion symmetry of
the two graphene layers. Low temperature measurements indicate, that the
increased on/off ratio is caused by the opening of a mobility gap. Beside field
effect transistors the presented approach can also be employed for other
bilayer graphene based devices like photodetectors for THz to infrared
radiation, chemical sensors and in more sophisticated structures such as
antidot- or superlattices where an artificial potential landscape has to be
created.Comment: 4 pages, 4 figure
Self-referent versus other-referent information processing in dysphoric, clinically depressed and remitted depressed subjects
Examined the processing of responses directed toward the self versus others by dysphoric, clinically depressed and remitted depressed Ss. In Exp 1, 30 dysphoric Ss found positive and negative responses toward the self equally informative. 30 nondysphoric Ss found positive responses toward the self more informative. When responses were directed toward others, dysphorics found positive responses more informative than negative responses, while nondysphorics found positive and negative responses directed toward others equally informative. Exp 2 replicated these results with 27 clinically depressed and 27 nondysphoric Ss, showing that remitted depressed Ss found positive responses more informative, regardless of direction to self or others. Results suggest that positive and negative constructs are differentially accessible for these groups
Tunable Excitons in Biased Bilayer Graphene
Recent measurements have shown that a continuously tunable bandgap of up to
250 meV can be generated in biased bilayer graphene [Y. Zhang et al., Nature
459, 820 (2009)], opening up pathway for possible graphene-based nanoelectronic
and nanophotonic devices operating at room temperature. Here, we show that the
optical response of this system is dominated by bound excitons. The main
feature of the optical absorbance spectrum is determined by a single symmetric
peak arising from excitons, a profile that is markedly different from that of
an interband transition picture. Under laboratory conditions, the binding
energy of the excitons may be tuned with the external bias going from zero to
several tens of meV's. These novel strong excitonic behaviors result from a
peculiar, effective ``one-dimensional'' joint density of states and a
continuously-tunable bandgap in biased bilayer graphene. Moreover, we show that
the electronic structure (level degeneracy, optical selection rules, etc.) of
the bound excitons in a biased bilayer graphene is markedly different from that
of a two-dimensional hydrogen atom because of the pseudospin physics
Electrostatically confined Quantum Rings in bilayer Graphene
We propose a new system where electron and hole states are electrostatically
confined into a quantum ring in bilayer graphene. These structures can be
created by tuning the gap of the graphene bilayer using nanostructured gates or
by position-dependent doping. The energy levels have a magnetic field ()
dependence that is strikingly distinct from that of usual semiconductor quantum
rings. In particular, the eigenvalues are not invariant under a
transformation and, for a fixed total angular momentum index , their field
dependence is not parabolic, but displays two minima separated by a saddle
point. The spectra also display several anti-crossings, which arise due to the
overlap of gate-confined and magnetically-confined states.Comment: 5 pages, 6 figures, to appear in Nano Letter
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