Measurement of the energy dependence of phase relaxation by single electron tunneling

Single electron tunneling through a single impurity level is used to probe the fluctuations of the local density of states in the emitter. The energy dependence of quasi-particle relaxation in the emitter can be extracted from the damping of the fluctuations of the local density of states (LDOS). At larger magnetic fields Zeeman splitting is observed.Comment: 2 pages, 4 figures; 25th International Conference on the Physics of Semiconductors, Osaka, Japan, September 17-22, 200

Electron release of rare gas atom clusters under an intense laser pulse

Calculating the energy absorption of atomic clusters as a function of the laser pulse length $T$ we find a maximum for a critical $T^*$. We show that $T^*$ can be linked to an optimal cluster radius $R^*$. The existence of this radius can be attributed to the enhanced ionization mechanism originally discovered for diatomic molecules. Our findings indicate that enhanced ionization should be operative for a wide class of rare gas clusters. From a simple Coulomb explosion ansatz, we derive an analytical expression relating the maximum energy release to a suitably scaled expansion time which can be expressed with the pulse length $T^*$.Comment: 4 pages, 5 figure

Energy spectrum and Landau levels in bilayer graphene with spin-orbit interaction

We present a theoretical study of the bandstructure and Landau levels in bilayer graphene at low energies in the presence of a transverse magnetic field and Rashba spin-orbit interaction in the regime of negligible trigonal distortion. Within an effective low energy approach (L\"owdin partitioning theory) we derive an effective Hamiltonian for bilayer graphene that incorporates the influence of the Zeeman effect, the Rashba spin-orbit interaction, and inclusively, the role of the intrinsic spin-orbit interaction on the same footing. Particular attention is spent to the energy spectrum and Landau levels. Our modeling unveil the strong influence of the Rashba coupling $\lambda_R$ in the spin-splitting of the electron and hole bands. Graphene bilayers with weak Rashba spin-orbit interaction show a spin-splitting linear in momentum and proportional to $\lambda_R$, but scales inversely proportional to the interlayer hopping energy $\gamma_1$. However, at robust spin-orbit coupling $\lambda_R$ the energy spectrum shows a strong warping behavior near the Dirac points. We find the bias-induced gap in bilayer graphene to be decreasing with increasing Rashba coupling, a behavior resembling a topological insulator transition. We further predict an unexpected assymetric spin-splitting and crossings of the Landau levels due to the interplay between the Rashba interaction and the external bias voltage. Our results are of relevance for interpreting magnetotransport and infrared cyclotron resonance measurements, including also situations of comparatively weak spin-orbit coupling.Comment: 25 pages, 5 figure

Symmetry of boundary conditions of the Dirac equation for electrons in carbon nanotubes.

We consider the effective mass model of spinless electrons in single wall carbon nanotubes that is equivalent to the Dirac equation for massless fermions. Within this framework we derive all possible energy independent hard wall boundary conditions that are applicable to metallic tubes. The boundary conditions are classified in terms of their symmetry properties and we demonstrate that the use of different boundary conditions will result in varying degrees of valley degeneracy breaking of the single particle energy spectrum

Gate-tunable bandgap in bilayer graphene

The tight-binding model of bilayer graphene is used to find the gap between the conduction and valence bands, as a function of both the gate voltage and as the doping by donors or acceptors. The total Hartree energy is minimized and the equation for the gap is obtained. This equation for the ratio of the gap to the chemical potential is determined only by the screening constant. Thus the gap is strictly proportional to the gate voltage or the carrier concentration in the absence of donors or acceptors. In the opposite case, where the donors or acceptors are present, the gap demonstrates the asymmetrical behavior on the electron and hole sides of the gate bias. A comparison with experimental data obtained by Kuzmenko et al demonstrates the good agreement.Comment: 6 pages, 5 figure

Magnetotransport Properties of Quasi-Free Standing Epitaxial Graphene Bilayer on SiC: Evidence for Bernal Stacking

We investigate the magnetotransport properties of quasi-free standing epitaxial graphene bilayer on SiC, grown by atmospheric pressure graphitization in Ar, followed by H$_2$ intercalation. At the charge neutrality point the longitudinal resistance shows an insulating behavior, which follows a temperature dependence consistent with variable range hopping transport in a gapped state. In a perpendicular magnetic field, we observe quantum Hall states (QHSs) both at filling factors ($\nu$) multiple of four ($\nu=4, 8, 12$), as well as broken valley symmetry QHSs at $\nu=0$ and $\nu=6$. These results unambiguously show that the quasi-free standing graphene bilayer grown on the Si-face of SiC exhibits Bernal stacking.Comment: 12 pages, 5 figure

High On/Off Ratios in Bilayer Graphene Field Effect Transistors Realized by Surface Dopants

The unique property of bilayer graphene to show a band gap tunable by external electrical fields enables a variety of different device concepts with novel functionalities for electronic, optoelectronic and sensor applications. So far the operation of bilayer graphene based field effect transistors requires two individual gates to vary the channel's conductance and to create a band gap. In this paper we report on a method to increase the on/off ratio in single gated bilayer graphene field effect transistors by adsorbate doping. The adsorbate dopants on the upper side of the graphene establish a displacement field perpendicular to the graphene surface breaking the inversion symmetry of the two graphene layers. Low temperature measurements indicate, that the increased on/off ratio is caused by the opening of a mobility gap. Beside field effect transistors the presented approach can also be employed for other bilayer graphene based devices like photodetectors for THz to infrared radiation, chemical sensors and in more sophisticated structures such as antidot- or superlattices where an artificial potential landscape has to be created.Comment: 4 pages, 4 figure

Self-referent versus other-referent information processing in dysphoric, clinically depressed and remitted depressed subjects

Examined the processing of responses directed toward the self versus others by dysphoric, clinically depressed and remitted depressed Ss. In Exp 1, 30 dysphoric Ss found positive and negative responses toward the self equally informative. 30 nondysphoric Ss found positive responses toward the self more informative. When responses were directed toward others, dysphorics found positive responses more informative than negative responses, while nondysphorics found positive and negative responses directed toward others equally informative. Exp 2 replicated these results with 27 clinically depressed and 27 nondysphoric Ss, showing that remitted depressed Ss found positive responses more informative, regardless of direction to self or others. Results suggest that positive and negative constructs are differentially accessible for these groups

Tunable Excitons in Biased Bilayer Graphene

Recent measurements have shown that a continuously tunable bandgap of up to 250 meV can be generated in biased bilayer graphene [Y. Zhang et al., Nature 459, 820 (2009)], opening up pathway for possible graphene-based nanoelectronic and nanophotonic devices operating at room temperature. Here, we show that the optical response of this system is dominated by bound excitons. The main feature of the optical absorbance spectrum is determined by a single symmetric peak arising from excitons, a profile that is markedly different from that of an interband transition picture. Under laboratory conditions, the binding energy of the excitons may be tuned with the external bias going from zero to several tens of meV's. These novel strong excitonic behaviors result from a peculiar, effective ``one-dimensional'' joint density of states and a continuously-tunable bandgap in biased bilayer graphene. Moreover, we show that the electronic structure (level degeneracy, optical selection rules, etc.) of the bound excitons in a biased bilayer graphene is markedly different from that of a two-dimensional hydrogen atom because of the pseudospin physics

Electrostatically confined Quantum Rings in bilayer Graphene

We propose a new system where electron and hole states are electrostatically confined into a quantum ring in bilayer graphene. These structures can be created by tuning the gap of the graphene bilayer using nanostructured gates or by position-dependent doping. The energy levels have a magnetic field ($B_{0}$) dependence that is strikingly distinct from that of usual semiconductor quantum rings. In particular, the eigenvalues are not invariant under a $B_0 \to -B_0$ transformation and, for a fixed total angular momentum index $m$, their field dependence is not parabolic, but displays two minima separated by a saddle point. The spectra also display several anti-crossings, which arise due to the overlap of gate-confined and magnetically-confined states.Comment: 5 pages, 6 figures, to appear in Nano Letter