Tunable graphene system with two decoupled monolayers

The use of two truly two-dimensional gapless semiconductors, monolayer and bilayer graphene, as current-carrying components in field-effect transistors (FET) gives access to new types of nanoelectronic devices. Here, we report on the development of graphene-based FETs containing two decoupled graphene monolayers manufactured from a single one folded during the exfoliation process. The transport characteristics of these newly-developed devices differ markedly from those manufactured from a single-crystal bilayer. By analyzing Shubnikov-de Haas oscillations, we demonstrate the possibility to independently control the carrier densities in both layers using top and bottom gates, despite there being only a nanometer scale separation between them

A discrete time-dependent method for metastable atoms in intense fields

The full-dimensional time-dependent Schrodinger equation for the electronic dynamics of single-electron systems in intense external fields is solved directly using a discrete method. Our approach combines the finite-difference and Lagrange mesh methods. The method is applied to calculate the quasienergies and ionization probabilities of atomic and molecular systems in intense static and dynamic electric fields. The gauge invariance and accuracy of the method is established. Applications to multiphoton ionization of positronium and hydrogen atoms and molecules are presented. At very high intensity above saturation threshold, we extend the method using a scaling technique to estimate the quasienergies of metastable states of the hydrogen molecular ion. The results are in good agreement with recent experiments.Comment: 10 pages, 9 figure, 4 table

Measurement of the energy dependence of phase relaxation by single electron tunneling

Single electron tunneling through a single impurity level is used to probe the fluctuations of the local density of states in the emitter. The energy dependence of quasi-particle relaxation in the emitter can be extracted from the damping of the fluctuations of the local density of states (LDOS). At larger magnetic fields Zeeman splitting is observed.Comment: 2 pages, 4 figures; 25th International Conference on the Physics of Semiconductors, Osaka, Japan, September 17-22, 200

Gate-tunable bandgap in bilayer graphene

The tight-binding model of bilayer graphene is used to find the gap between the conduction and valence bands, as a function of both the gate voltage and as the doping by donors or acceptors. The total Hartree energy is minimized and the equation for the gap is obtained. This equation for the ratio of the gap to the chemical potential is determined only by the screening constant. Thus the gap is strictly proportional to the gate voltage or the carrier concentration in the absence of donors or acceptors. In the opposite case, where the donors or acceptors are present, the gap demonstrates the asymmetrical behavior on the electron and hole sides of the gate bias. A comparison with experimental data obtained by Kuzmenko et al demonstrates the good agreement.Comment: 6 pages, 5 figure

Spin-polarized tunneling through randomly transparent magnetic junctions: Reentrant magnetoresistance approaching the Julliere limit

Electron conductance in planar magnetic tunnel junctions with long-range barrier disorder is studied within Glauber-eikonal approximation enabling exact disorder ensemble averaging by means of the Holtsmark-Markov method. This allows us to address a hitherto unexplored regime of the tunneling magnetoresistance effect characterized by the crossover from momentum-conserving to random tunneling as a function of the defect concentration. We demonstrate that such a crossover results in a reentrant magnetoresistance: It goes through a pronounced minimum before reaching disorder- and geometry-independent Julliere's value at high defect concentrations.Comment: 7 pages, 5 figures, derivation of Eq. (39) added, errors in Ref. 7 correcte

Energy spectrum and Landau levels in bilayer graphene with spin-orbit interaction

We present a theoretical study of the bandstructure and Landau levels in bilayer graphene at low energies in the presence of a transverse magnetic field and Rashba spin-orbit interaction in the regime of negligible trigonal distortion. Within an effective low energy approach (L\"owdin partitioning theory) we derive an effective Hamiltonian for bilayer graphene that incorporates the influence of the Zeeman effect, the Rashba spin-orbit interaction, and inclusively, the role of the intrinsic spin-orbit interaction on the same footing. Particular attention is spent to the energy spectrum and Landau levels. Our modeling unveil the strong influence of the Rashba coupling $\lambda_R$ in the spin-splitting of the electron and hole bands. Graphene bilayers with weak Rashba spin-orbit interaction show a spin-splitting linear in momentum and proportional to $\lambda_R$, but scales inversely proportional to the interlayer hopping energy $\gamma_1$. However, at robust spin-orbit coupling $\lambda_R$ the energy spectrum shows a strong warping behavior near the Dirac points. We find the bias-induced gap in bilayer graphene to be decreasing with increasing Rashba coupling, a behavior resembling a topological insulator transition. We further predict an unexpected assymetric spin-splitting and crossings of the Landau levels due to the interplay between the Rashba interaction and the external bias voltage. Our results are of relevance for interpreting magnetotransport and infrared cyclotron resonance measurements, including also situations of comparatively weak spin-orbit coupling.Comment: 25 pages, 5 figure

In search of ‘lost’ knowledge and outsourced expertise in flood risk management

This paper examines the parallel discourses of ‘lost’ local flood expertise and the growing use of commercial consultancies to outsource aspects of flood risk work. We critically examine the various claims and counter-claims about lost, local and external expertise in flood management, focusing on the aftermath of the 2007 floods in East Yorkshire, England. Drawing on interviews with consultants, drainage engineers and others, we caution against claims that privilege ‘local’ floods knowledge as ‘good’ and expert knowledge as somehow suspect. This paper urges carefulness in interpreting claims about local knowledge, arguing that it is important always to think instead of hybrid knowledge formations. We conclude by arguing that experiments in the co-production of flood risk knowledge need to be seen as part of a spectrum of ways for producing shared knowledge

Magnetotransport Properties of Quasi-Free Standing Epitaxial Graphene Bilayer on SiC: Evidence for Bernal Stacking

We investigate the magnetotransport properties of quasi-free standing epitaxial graphene bilayer on SiC, grown by atmospheric pressure graphitization in Ar, followed by H$_2$ intercalation. At the charge neutrality point the longitudinal resistance shows an insulating behavior, which follows a temperature dependence consistent with variable range hopping transport in a gapped state. In a perpendicular magnetic field, we observe quantum Hall states (QHSs) both at filling factors ($\nu$) multiple of four ($\nu=4, 8, 12$), as well as broken valley symmetry QHSs at $\nu=0$ and $\nu=6$. These results unambiguously show that the quasi-free standing graphene bilayer grown on the Si-face of SiC exhibits Bernal stacking.Comment: 12 pages, 5 figure

The developmental environment modulates mating-induced aggression and fighting success in adult female Drosophila

Funding Information Rhodes Trust Brazilian Research Council. Grant Number: 211668/2013‐3 St. John's College, University of Oxford Christ Church College, University of Oxford Biotechnology and Biological Sciences Research Council. Grant Number: BB/K014544/1Peer reviewedPublisher PD