78 research outputs found
Differentiation between polaron-pair and triplet-exciton polaron spin-dependent mechanisms in organic light-emitting diodes by coherent spin beating
Pulsed electrically detected magnetic resonance offers a unique avenue to distinguish between polaron-pair (PP) and triplet-exciton polaron (TEP) spin-dependent recombination, which control the conductivity and magnetoresistivity of organic semiconductors. Which of these two fundamental processes dominates depends on carrier balance: by injecting surplus electrons we show that both processes simultaneously impact the device conductivity. The two mechanisms are distinguished by the presence of a half-field resonance, indicative of TEP interactions, and transient spin beating, the signature of PPs. Coherent spin Rabi flopping in the half-field (triplet) channel is observed, demonstrating that the triplet exciton has an ensemble phase coherence time of at least 60 ns, offering insight into the effect of carrier correlations on spin dephasing
Slow Hopping and Spin Dephasing of Coulombically Bound Polaron Pairs in an Organic Semiconductor at Room Temperature
Polaron pairs are intermediate electronic states that are integral to the optoelectronic conversion process in organic semiconductors. Here, we report on electrically detected spin echoes arising from direct quantum control of polaron pair spins in an organic light-emitting diode at room temperature. This approach reveals phase coherence on a microsecond time scale, and offers a direct way to probe charge recombination and dissociation processes in organic devices, revealing temperature-independent intermolecular carrier hopping on slow time scales. In addition, the long spin phase coherence time at room temperature is of potential interest for developing quantum-enhanced sensors and information processing systems which operate at room temperature
The effect of low-energy ion-implantation on the electrical transport properties of Si-SiO2 MOSFETs
Using silicon MOSFETs with thin (5nm) thermally grown SiO2 gate dielectrics,
we characterize the density of electrically active traps at low-temperature
after 16keV phosphorus ion-implantation through the oxide. We find that, after
rapid thermal annealing at 1000oC for 5 seconds, each implanted P ion
contributes an additional 0.08 plus/minus 0.03 electrically active traps,
whilst no increase in the number of traps is seen for comparable silicon
implants. This result shows that the additional traps are ionized P donors, and
not damage due to the implantation process. We also find, using the room
temperature threshold voltage shift, that the electrical activation of donors
at an implant density of 2x10^12 cm^-2 is ~100%.Comment: 11 pages, 10 figure
Electrically-detected magnetic resonance in ion-implanted Si:P nanostructures
We present the results of electrically-detected magnetic resonance (EDMR)
experiments on silicon with ion-implanted phosphorus nanostructures, performed
at 5 K. The devices consist of high-dose implanted metallic leads with a square
gap, into which Phosphorus is implanted at a non-metallic dose corresponding to
10^17 cm^-3. By restricting this secondary implant to a 100 nm x 100 nm region,
the EDMR signal from less than 100 donors is detected. This technique provides
a pathway to the study of single donor spins in semiconductors, which is
relevant to a number of proposals for quantum information processing.Comment: 9 pages, 3 figure
- and -spin relaxation time limitations of phosphorous donor electrons near crystalline silicon to silicon dioxide interface defects
A study of donor electron spins and spin--dependent electronic transitions
involving phosphorous (P) atoms in proximity of the (111) oriented
crystalline silicon (c-Si) to silicon dioxide (SiO) interface is
presented for [P] = 10 and [P] =
10 at about liquid He temperatures (
). Using pulsed electrically detected magnetic
resonance (pEDMR), spin--dependent transitions between the \Phos donor state
and two distinguishable interface states are observed, namely (i) \Pb centers
which can be identified by their characteristic anisotropy and (ii) a more
isotropic center which is attributed to E defects of the \sio bulk
close to the interface. Correlation measurements of the dynamics of
spin--dependent recombination confirm that previously proposed transitions
between \Phos and the interface defects take place. The influence of these
electronic near--interface transitions on the \Phos donor spin coherence time
as well as the donor spin--lattice relaxation time is then
investigated by comparison of spin Hahn--echo decay measurements obtained from
conventional bulk sensitive pulsed electron paramagnetic resonance and surface
sensitive pEDMR, as well as surface sensitive electrically detected inversion
recovery experiments. The measurements reveal that both and of
\Phos donor electrons spins in proximity of energetically lower interface
states at K are reduced by several orders of magnitude
Broadband electrically detected magnetic resonance of phosphorus donors in a silicon field-effect transistor
We report electrically detected magnetic resonance of phosphorus donors in a
silicon field-effect transistor. An on-chip transmission line is used to
generate the oscillating magnetic field allowing broadband operation. At
milli-kelvin temperatures, continuous wave spectra were obtained up to 40 GHz,
using both magnetic field and microwave frequency modulation. The spectra
reveal the hyperfine-split electron spin resonances characteristic for Si:P and
a central feature which displays the fingerprint of spin-spin scattering in the
two-dimensional electron gas.Comment: 4 pages, 4 figures, submitted to AP
Differentiation between polaron-pair and triplet-exciton polaron spin-dependent mechanisms in organic light-emitting diodes by coherent spin beating
Pulsed electrically detected magnetic resonance offers a unique avenue to distinguish between polaron-pair (PP) and triplet-exciton polaron (TEP) spin-dependent recombination, which control the conductivity and magnetoresistivity of organic semiconductors. Which of these two fundamental processes dominates depends on carrier balance: by injecting surplus electrons we show that both processes simultaneously impact the device conductivity. The two mechanisms are distinguished by the presence of a half-field resonance, indicative of TEP interactions, and transient spin beating, the signature of PPs. Coherent spin Rabi flopping in the half-field (triplet) channel is observed, demonstrating that the triplet exciton has an ensemble phase coherence time of at least 60 ns, offering insight into the effect of carrier correlations on spin dephasing
Electrical detection of 31P spin quantum states
In recent years, a variety of solid-state qubits has been realized, including
quantum dots, superconducting tunnel junctions and point defects. Due to its
potential compatibility with existing microelectronics, the proposal by Kane
based on phosphorus donors in Si has also been pursued intensively. A key issue
of this concept is the readout of the P quantum state. While electrical
measurements of magnetic resonance have been performed on single spins, the
statistical nature of these experiments based on random telegraph noise
measurements has impeded the readout of single spin states. In this letter, we
demonstrate the measurement of the spin state of P donor electrons in silicon
and the observation of Rabi flops by purely electric means, accomplished by
coherent manipulation of spin-dependent charge carrier recombination between
the P donor and paramagnetic localized states at the Si/SiO2 interface via
pulsed electrically detected magnetic resonance. The electron spin information
is shown to be coupled through the hyperfine interaction with the P nucleus,
which demonstrates the feasibility of a recombination-based readout of nuclear
spins
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