Characterization of FBK small-pitch 3D diodes after neutron irradiation up to 3.5x10**16 neq cm**-2

We report on the characterization by a position resolved laser system of small-pitch 3D diodes irradiated with neutrons up to an extremely high fluence of 3.5x10**16 neq cm**-2. We show that very high values of signal efficiency are obtained, in good agreement with the geometrical expectation based on the small values of the inter-electrode spacings, and also boosted by charge multiplication effects at high voltage. These results confirm the very high radiation tolerance of small-pitch 3D sensors well beyond the maximum fluences expected at the High Luminosity LHC.Comment: 10 pages, 7 figures, submitted to Proceedings of IWORID 2018 on JINS

Development of New 3D Pixel Sensors for Phase 2 Upgrades at LHC

We report on the development of new 3D pixel sensors for the Phase 2 Upgrades at the High-Luminosity LHC (HL-LHC). To cope with the requirements of increased pixel granularity (e.g., 50x50 or 25x100 um2 pixel size) and extreme radiation hardness (up to a fluence of 2e16 neq cm-2), thinner 3D sensors (~100 um) with electrodes having narrower size (~ 5 um) and reduced spacing (~ 30 um) are considered. The paper covers TCAD simulations, as well as technological and design aspects relevant to the first batch of these 3D sensors, that is currently being fabricated at FBK on 6-inch wafers.Comment: 4 pages, 8 figures, 2015 IEEE Nuclear Science Symposium and Medical Imaging Conferenc

Carbon nanotube film/silicon heterojunction photodetector for new cutting-edge technological devices

Photodetector (PD) devices based on carbon nanotube/n-silicon heterojunction (NSH) have been realized, with a linear response in a large optical power range, proving competitive performances with respect to a recent nanostructure-based detector and those currently available on the market. The core of these devices is a thin semi-transparent and conductive single-walled carbon nanotubes film with a multitask role: junction element, light absorber and transmitter, photocarrier transporting layer, and charge collector. The PD exhibits rise times of some nanoseconds, detecting light from ultraviolet (240 nm) to infrared (1600 nm), and external quantum efficiency reaching 300% in the VIS spectra region

First Production of New Thin 3D Sensors for HL-LHC at FBK

Owing to their intrinsic (geometry dependent) radiation hardness, 3D pixel sensors are promising candidates for the innermost tracking layers of the forthcoming experiment upgrades at the Phase 2 High-Luminosity LHC (HL-LHC). To this purpose, extreme radiation hardness up to the expected maximum fluence of 2e16 neq.cm-2 must come along with several technological improvements in a new generation of 3D pixels, i.e., increased pixel granularity (50x50 or 25x100 um2 cell size), thinner active region (~100 um), narrower columnar electrodes (~5 um diameter) with reduced inter-electrode spacing (~30 um), and very slim edges (~100 um). The fabrication of the first batch of these new 3D sensors was recently completed at FBK on Si-Si direct wafer bonded 6-inch substrates. Initial electrical test results, performed at wafer level on sensors and test structures, highlighted very promising performance, in good agreement with TCAD simulations: low leakage current (<1 pA/column), intrinsic breakdown voltage of more than 150 V, capacitance of about 50 fF/column, thus assessing the validity of the design approach. A large variety of pixel sensors compatible with both existing (e.g., ATLAS FEI4 and CMS PSI46) and future (e.g., RD53) read-out chips were fabricated, that were also electrically tested on wafer using a temporary metal layer patterned as strips shorting rows of pixels together. This allowed a statistically significant distribution of the relevant electrical quantities to be obtained, thus gaining insight into the impact of process-induced defects. A few 3D strip test structures were irradiated with X-rays, showing inter-strip resistance of at least several GOhm even after 50 Mrad(Si) dose, thus proving the p-spray robustness. We present the most important design and technological aspects, and results obtained from the initial investigations.Comment: 8 pages, 7 figures, 2016 IWORI

PECVD low stress silicon nitride analysis and optimization for the fabrication of CMUT devices

Two technological options to achieve a high deposition rate, low stress plasma-enhanced chemical vapor deposition (PECVD) silicon nitride to be used in capacitive micromachined ultrasonic transducers (CMUT) fabrication are investigated and presented. Both options are developed and implemented on standard production line PECVD equipment in the framework of a CMUT technology transfer from R & D to production. A tradeoff between deposition rate, residual stress and electrical properties is showed. The first option consists in a double layer of silicon nitride with a relatively high deposition rate of ~100 nm min−1 and low compressive residual stress, which is suitable for the fabrication of the thick nitride layer used as a mechanical support of the CMUTs. The second option involves the use of a mixed frequency low-stress silicon nitride with outstanding electrical insulation capability, providing improved mechanical and electrical integrity of the CMUT active layers. The behavior of the nitride is analyzed as a function of deposition parameters and subsequent annealing. The nitride layer characterization is reported in terms of interfaces density influence on residual stress, refractive index, deposition rate, and thickness variation both as deposited and after thermal treatment. A sweet spot for stress stability is identified at an interfaces density of 0.1 nm−1, yielding 87 MPa residual stress after annealing. A complete CMUT device fabrication is reported using the optimized nitrides. The CMUT performance is tested, demonstrating full functionality in ultrasound imaging applications and an overall performance improvement with respect to previous devices fabricated with non-optimized silicon nitride

Characterization of timing and spacial resolution of novel TI-LGAD structures before and after irradiation

The characterization of spacial and timing resolution of the novel Trench Isolated LGAD (TI-LGAD) technology is presented. This technology has been developed at FBK with the goal of achieving 4D pixels, where an accurate position resolution is combined in a single device with the precise timing determination for Minimum Ionizing Particles (MIPs). In the TI-LGAD technology, the pixelated LGAD pads are separated by physical trenches etched in the silicon. This technology can reduce the interpixel dead area, mitigating the fill factor problem. The TI-RD50 production studied in this work is the first one of pixelated TI-LGADs. The characterization was performed using a scanning TCT setup with an infrared laser and a $^90$Sr source setup

Characterization of timing and spacial resolution of novel TI-LGAD structures before and after irradiation

The characterization of spacial and timing resolution of the novel Trench Isolated LGAD (TI-LGAD) technology is presented. This technology has been developed at FBK with the goal of achieving 4D pixels, where an accurate position resolution is combined in a single device with the precise timing determination for Minimum Ionizing Particles (MIPs). In the TI-LGAD technology, the pixelated LGAD pads are separated by physical trenches etched in the silicon. This technology can reduce the interpixel dead area, mitigating the fill factor problem. The TI-RD50 production studied in this work is the first one of pixelated TI-LGADs. The characterization was performed using a scanning TCT setup with an infrared laser and a $^{90}$Sr source setup

Results on Proton-Irradiated 3D Pixel Sensors Interconnected to RD53A Readout ASIC

Test beam results obtained with 3D pixel sensors bump-bonded to the RD53A prototype readout ASIC are reported. Sensors from FBK (Italy) and IMB-CNM (Spain) have been tested before and after proton-irradiation to an equivalent fluence of about $1$ $\times$ $10^{16}$ $\text{n}_{\text{eq}}$ cm$^{-2}$ (1 MeV equivalent neutrons). This is the first time that one single collecting electrode fine pitch 3D sensors are irradiated up to such fluence bump-bonded to a fine pitch ASIC. The preliminary analysis of the collected data shows no degradation on the hit detection efficiencies of the tested sensors after high energy proton irradiation, demonstrating the excellent radiation tolerance of the 3D pixel sensors. Thus, they will be excellent candidates for the extreme radiation environment at the innermost layers of the HL-LHC experiments.Comment: Conference Proceedings of VCI2019, 15th Vienna Conference of Instrumentation, February 18-22, 2019, Vienna, Austria. arXiv admin note: text overlap with arXiv:1903.0196

Status and upgrade of the visible light diagnostics port for energy spread measurements at KARA

At the visible light diagnostic (VLD) port at the Karlsruhe Research Accelerator (KARA), it is possible to measure the energy spread of electron bunches by measuring the horizontal bunch profile of the incoherent synchrotron radiation. KALYPSO, a MHz-rate line-array detector has been used to measure the bunch profile. Recently, the KALYPSO system has been upgraded to a version incorporating a microstrip sensor based on TI-LGAD. The performed measurements have shown that the overall sensitivity of the system was significantly improved, which enables measurements at low bunch charges. In this contribution, a brief overview of the upgraded setup and preliminary measurement results will be presented

Charge collection measurements with p-type Magnetic Czochralski silicon single pad detectors

Abstract The charge collected from beta source particles in single pad detectors produced on p-type Magnetic Czochralski (MCz) silicon wafers has been measured before and after irradiation with 26 MeV protons. After a 1 MeV neutron equivalent fluence of 1 × 10 15 cm - 2 the collected charge is reduced to 77% at bias voltages below 900 V. This result is compared with previous results from charge collection measurements