Infrared Absorption Study of Zn-S Hybrid and ZnS Ultrathin Films Deposited on Porous AAO Ceramic Support

Infrared (IR) spectroscopy is a powerful technique to characterize the chemical structure and dynamics of various types of samples. However, the signal-to-noise-ratio drops rapidly when the sample thickness gets much smaller than penetration depth, which is proportional to wavelength. This poses serious problems in analysis of thin films. In this work, an approach is demonstrated to overcome these problems. It is shown that a standard IR spectroscopy can be successfully employed to study the structure and composition of films as thin as 20 nm, when the layers were grown on porous substrates with a well-developed surface area. In contrast to IR spectra of the films deposited on flat Si substrates, the IR spectra of the same films but deposited on porous ceramic support show distinct bands that enabled reliable chemical analysis. The analysis of Zn-S ultrathin films synthesized by atomic layer deposition (ALD) from diethylzinc (DEZ) and 1,5-pentanedithiol (PDT) as precursors of Zn and S, respectively, served as proof of concept. However, the approach presented in this study can be applied to analysis of any ultrathin film deposited on target substrate and simultaneously on porous support, where the latter sample would be a reference sample dedicated for IR analysis of this film.Peer reviewe

The Effect of Atomic Layer Deposited Overcoat on Co-Pt-Si/γ-Al2O3 Fischer–Tropsch Catalyst

Atomic layer deposition (ALD) was used to prepare a thin alumina layer on Fischer–Tropsch catalysts. Co-Pt-Si/γ-Al2O3 catalyst was overcoated with 15–40 cycles of Al2O3 deposited from trimethylaluminum (TMA) and water vapor, followed by thermal annealing. The resulting tailored Fischer–Tropsch catalyst with 35 cycle ALD overcoating had increased activity compared to unmodified catalyst. The increase in activity was achieved without significant loss of selectivity towards heavier hydrocarbons. Altered catalyst properties were assumed to result from cobalt particle stabilization by ALD alumina overcoating and nanoscale porosity of the overcoating. In addition to optimal thickness of the overcoat, thermal annealing was an essential part of preparing ALD overcoated catalyst

The Effect of Atomic Layer Deposited Overcoat on Co-Pt-Si/γ-Al2O3 Fischer–Tropsch Catalyst

Atomic layer deposition (ALD) was used to prepare a thin alumina layer on Fischer–Tropsch catalysts. Co-Pt-Si/γ-Al2O3 catalyst was overcoated with 15–40 cycles of Al2O3 deposited from trimethylaluminum (TMA) and water vapor, followed by thermal annealing. The resulting tailored Fischer–Tropsch catalyst with 35 cycle ALD overcoating had increased activity compared to unmodified catalyst. The increase in activity was achieved without significant loss of selectivity towards heavier hydrocarbons. Altered catalyst properties were assumed to result from cobalt particle stabilization by ALD alumina overcoating and nanoscale porosity of the overcoating. In addition to optimal thickness of the overcoat, thermal annealing was an essential part of preparing ALD overcoated catalyst

The Effect of Atomic Layer Deposited Overcoat on Co-Pt-Si/γ-Al2O3 Fischer–Tropsch Catalyst

Atomic layer deposition (ALD) was used to prepare a thin alumina layer on Fischer-Tropsch catalysts. Co-Pt-Si/gamma-Al2O3 catalyst was overcoated with 15-40 cycles of Al2O3 deposited from trimethylaluminum (TMA) and water vapor, followed by thermal annealing. The resulting tailored Fischer-Tropsch catalyst with 35 cycle ALD overcoating had increased activity compared to unmodified catalyst. The increase in activity was achieved without significant loss of selectivity towards heavier hydrocarbons. Altered catalyst properties were assumed to result from cobalt particle stabilization by ALD alumina overcoating and nanoscale porosity of the overcoating. In addition to optimal thickness of the overcoat, thermal annealing was an essential part of preparing ALD overcoated catalyst.Peer reviewe

Atomic Layer Deposition Coated Filters in Catalytic Filtration of Gasification Gas

Steel filter discs were catalytically activated by ALD, using a coating of supporting Al2O3 layer and an active NiO layer for gas cleaning. Prepared discs were tested for model biomass gasification and gas catalytic filtration to reduce or eliminate the need for a separate reforming unit for gasification gas tars and lighter hydrocarbons. Two different coating methods were tested. The method utilizing the stop-flow setting was shown to be the most suitable for the preparation of active and durable catalytic filters, which significantly decreases the amount of tar compounds in gasification gas. A pressure of 5 bar and temperatures of over 850 °C are required for efficient tar reforming. In optimal conditions, applying catalytic coating to the filter resulted in a seven-fold naphthalene conversion increase from 7% to 49%

Oxidative MLD of Conductive PEDOT Thin Films with EDOT and ReCl5 as Precursors

Because of its high conductivity and intrinsic stability, poly(3,4-ethylenedioxythiophene (PEDOT) has gained great attention both in academic research and industry over the years. In this study, we used the oxidative molecular layer deposition (oMLD) technique to deposit PEDOT from 3,4-ethylenedioxythiophene (EDOT) and a new inorganic oxidizing agent, rhenium pentachloride (ReCl5). We extensively characterized the properties of the films by scanning electron microscopy, X-ray diffraction, X-ray photoelectron spectroscopy (XPS), energy-dispersive X-ray spectroscopy (EDS), Raman, and conductivity measurements. The oMLD of polymers is based on the sequential adsorption of the monomer and its oxidation-induced polymerization. However, oMLD has been scarcely used because of the challenge of finding a suitable combination of volatile, reactive, and stable organic monomers applicable at high temperatures. ReCl5 showed promising properties in oMLD because it has high thermal stability and high oxidizing ability for EDOT. PEDOT films were deposited at temperatures of 125-200 degrees C. EDS and XPS measurements showed that the as-deposited films contained residues of rhenium and chlorine, which could be removed by rinsing the films with deionized water. The polymer films were transparent in the visible region and showed relatively high electrical conductivities within the 2-2000 S cm(-1) range.Peer reviewe

Atomic Layer Deposition Coated Filters in Catalytic Filtration of Gasification Gas

Steel filter discs were catalytically activated by ALD, using a coating of supporting Al2O3 layer and an active NiO layer for gas cleaning. Prepared discs were tested for model biomass gasification and gas catalytic filtration to reduce or eliminate the need for a separate reforming unit for gasification gas tars and lighter hydrocarbons. Two different coating methods were tested. The method utilizing the stop-flow setting was shown to be the most suitable for the preparation of active and durable catalytic filters, which significantly decreases the amount of tar compounds in gasification gas. A pressure of 5 bar and temperatures of over 850 °C are required for efficient tar reforming. In optimal conditions, applying catalytic coating to the filter resulted in a seven-fold naphthalene conversion increase from 7% to 49%

Structural and Optical Characterization of ZnS Ultrathin Films Prepared by Low-Temperature ALD from Diethylzinc and 1.5-Pentanedithiol after Various Annealing Treatments

The structural and optical evolution of the ZnS thin films prepared by atomic layer deposition (ALD) from the diethylzinc (DEZ) and 1,5-pentanedithiol (PDT) as zinc and sulfur precursors was studied. A deposited ZnS layer (of about 60 nm) is amorphous, with a significant S excess. After annealing, the stoichiometry improved for annealing temperatures ≥400 °C and annealing time ≥2 h, and 1:1 stoichiometry was obtained when annealed at 500 °C for 4 h. ZnS crystallized into small crystallites (1–7 nm) with cubic sphalerite structure, which remained stable under the applied annealing conditions. The size of the crystallites (D) tended to decrease with annealing temperature, in agreement with the EDS data (decreased content of both S and Zn with annealing temperature); the D for samples annealed at 600 °C (for the time ≤2 h) was always the smallest. Both reflectivity and ellipsometric spectra showed characteristics typical for quantum confinement (distinct dips/peaks in UV spectral region). It can thus be concluded that the amorphous ZnS layer obtained at a relatively low temperature (150 °C) from organic S precursor transformed into the layers built of small ZnS nanocrystals of cubic structure after annealing at a temperature range of 300–600 °C under Ar atmosphere

Atomic Layer Deposition of Insulating AlF3/Polyimide Nanolaminate Films

This article describes the deposition of AlF3/polyimide nanolaminate film by inorganic-organic atomic layer deposition (ALD) at 170 °C. AlCl3 and TiF4 were used as precursors for AlF3. Polyimide layers were deposited from PMDA (pyromellitic dianhydride, 1,2,3,5-benzenetetracarboxylic anhydride) and DAH (1,6-diaminohexane). With field-emission scanning electron microscopy (FESEM) and X-ray reflection (XRR) analysis, it was found that the topmost layer (nominally 10 nm in thickness) of the nanolaminate film (100 nm total thickness) changed when exposed to the atmosphere. After all, the effect on roughness was minimal. The length of a delay time between the AlF3 and polyimide depositions was found to affect the sharpness of the nanolaminate structure. Electrical properties of AlF3/polyimide nanolaminate films were measured, indicating an increase in dielectric constant compared to single AlF3 and a decrease in leakage current compared to polyimide films, respectively

Gender-Specific Risk Factors for Intimate Partner Homicide : A Nationwide Register-Based Study

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