Hybrid III-V/Si distributed-feedback laser based on adhesive bonding

A hybrid evanescently coupled III-V/silicon distributed-feedback laser with an integrated monitor photodiode, based on adhesive divinyl siloxane-benzocyclobutene bonding and emitting at 1310 nm, is presented. An output power of similar to 2.85 mW is obtained in a continuous wave regime at 10 degrees C. The threshold current is 20 mA and a sidemode suppression ratio of 45 dB is demonstrated. Optical feedback is provided via corrugations on top of the silicon rib waveguide, while a specially developed bonding procedure yields 40-nm-thick adhesive bonding layers, enabling efficient evanescent coupling

Hybrid silicon evanescent approach to optical interconnects

We discuss the recently developed hybrid silicon evanescent platform (HSEP), and its application as a promising candidate for optical interconnects in silicon. A number of key discrete components and a wafer-scale integration process are reviewed. The motivation behind this work is to realize silicon-based photonic integrated circuits possessing unique advantages of III–V materials and silicon-on-insulator waveguides simultaneously through a complementary metal-oxide semiconductor fabrication process. Electrically pumped hybrid silicon distributed feedback and distributed Bragg reflector lasers with integrated hybrid silicon photodetectors are demonstrated coupled to SOI waveguides, serving as the reliable on-chip single-frequency light sources. For the external signal processing, Mach–Zehnder interferometer modulators are demonstrated, showing a resistance-capacitance-limited, 3 dB electrical bandwidth up to 8 GHz and a modulation efficiency of 1.5 V mm. The successful implementation of quantum well intermixing technique opens up the possibility to realize multiple III–V bandgaps in this platform. Sampled grating DBR devices integrated with electroabsorption modulators (EAM) are fabricated, where the bandgaps in gain, mirror, and EAM regions are 1520, 1440 and 1480 nm, respectively. The high-temperature operation characteristics of the HSEP are studied experimentally and theoretically. An overall characteristic temperature (T 0) of 51°C, an above threshold characteristic temperature (T 1) of 100°C, and a thermal impedance (Z T ) of 41.8°C/W, which agrees with the theoretical prediction of 43.5°C/W, are extracted from the Fabry–Perot devices. Scaling this platform to larger dimensions is demonstrated up to 150 mm wafer diameter. A vertical outgassing channel design is developed to accomplish high-quality III–V epitaxial transfer to silicon in a timely and dimension-independent fashion

A single regrowth integration platform for photonic circuits incorporating tunable SGDBR lasers and quantum-well EAMs

A monolithic integration platform is demonstrated for high functionality photonic circuits that include quantum-well electroalisorption modulators, semiconductor optical amplifiers, and widely tunable lasers. The platform is based on the selective removal of a set of active quantum wells located above an optical waveguide layer. The waveguide layer contains a second set of quantum wells to be used in modulator regions. Fabrication requires only a single blanket InP regrowth