Molecular beam epitaxy of InAs nanowires in SiO2 nanotube templates: challenges and prospects for integration of III-Vs on Si

Guided growth of semiconductor nanowires in nanotube templates has been considered as a potential platform for reproducible integration of III-Vs on silicon or other mismatched substrates. Herein, we report on the challenges and prospects of molecular beam epitaxy of InAs nanowires on SiO2/Si nanotube templates. We show how and under which conditions the nanowire growth is initiated by In-assisted vapor-liquid-solid growth enabled by the local conditions inside the nanotube template. The conditions for high yield of vertical nanowires are investigated in terms of the nanotube depth, diameter and V/III flux ratios. We present a model that further substantiates our findings. This work opens new perspectives for monolithic integration of III-Vs on the silicon platform enabling new applications in the electronics, optoelectronics and energy harvesting arena

Nonlinear motion and mechanical mixing in as-grown GaAs nanowires

We report nonlinear behavior in the motion of driven nanowire cantilevers. The nonlinearity can be described by the Duffing equation and is used to demonstrate mechanical mixing of two distinct excitation frequencies. Furthermore, we demonstrate that the nonlinearity can be used to amplify a signal at a frequency close to the mechanical resonance of the nanowire oscillator. Up to 26 dB of amplitude gain are demonstrated in this way

Magnetization reversal of an individual exchange biased permalloy nanotube

We investigate the magnetization reversal mechanism in an individual permalloy (Py) nanotube (NT) using a hybrid magnetometer consisting of a nanometer-scale SQUID (nanoSQUID) and a cantilever torque sensor. The Py NT is affixed to the tip of a Si cantilever and positioned in order to optimally couple its stray flux into a Nb nanoSQUID. We are thus able to measure both the NT's volume magnetization by dynamic cantilever magnetometry and its stray flux using the nanoSQUID. We observe a training effect and temperature dependence in the magnetic hysteresis, suggesting an exchange bias. We find a low blocking temperature $T_B = 18 \pm 2$ K, indicating the presence of a thin antiferromagnetic native oxide, as confirmed by X-ray absorption spectroscopy on similar samples. Furthermore, we measure changes in the shape of the magnetic hysteresis as a function of temperature and increased training. These observations show that the presence of a thin exchange-coupled native oxide modifies the magnetization reversal process at low temperatures. Complementary information obtained via cantilever and nanoSQUID magnetometry allows us to conclude that, in the absence of exchange coupling, this reversal process is nucleated at the NT's ends and propagates along its length as predicted by theory.Comment: 8 pages, 4 figure

Experimental Durability Analysis of Historical Ferrocement

The paper presents the results of a recent testing campaign carried out on the ferrocement elements built by Pier Luigi Nervi in the structures of Torino Esposizioni. These pavilions, built between 1947-1953, allowed Nervi to apply for the first time in a large structure his advances in the use of ferrocement in civil construction that he had pioneered during the war. The results obtained by Nervi were patented immediately after the end of the construction site and would have characterized Nervi’s technique for his whole career. Before Nervi’s civil applications, ferrocement was mainly used to build boats. The material is characterized by the multiple layers of mesh or fine rods completely impregnated with cement mortar, which Nervi noted could be applied to build slabs and roofing elements by using a very low amount of material. Considering the historical value of the structures and since the ferrocement elements are extremely thin, to investigate the durability of this material, small-scale ferrocement mockups were built in the laboratory, starting from a small sample collected on-site. A detailed testing program was developed, which included applying different treatments to the specimens before subjecting the samples to an accelerated weathering procedure to test the effects of each (mixed-in corrosion inhibitor, surface-applied inhibitor, etc.). The analysis of the ferrocement developed by Nervi in his constructions is a mandatory step for evaluating the health state of these elements and will help define the guidelines for their conservation. Moreover, it will help to expand the knowledge of Nervi’s system

Bio-nanotechnology application in wastewater treatment

The nanoparticles have received high interest in the field of medicine and water purification, however, the nanomaterials produced by chemical and physical methods are considered hazardous, expensive, and leave behind harmful substances to the environment. This chapter aimed to focus on green-synthesized nanoparticles and their medical applications. Moreover, the chapter highlighted the applicability of the metallic nanoparticles (MNPs) in the inactivation of microbial cells due to their high surface and small particle size. Modifying nanomaterials produced by green-methods is safe, inexpensive, and easy. Therefore, the control and modification of nanoparticles and their properties were also discussed

Visual Understanding of Light Absorption and Waveguiding in Standing Nanowires with 3D Fluorescence Confocal Microscopy

Semiconductor nanowires are promising building blocks for next generation photonics. Indirect proofs of large absorption cross sections have been reported in nanostructures with subwavelength diameters, an effect that is even more prominent in vertically standing nanowires. In this work we provide a three-dimensional map of the light around vertical GaAs nanowires standing on a substrate by using fluorescence confocal microscopy, where the strong long-range disruption of the light path along the nanowire is illustrated. We find that the actual long-distance perturbation is much larger in size than calculated extinction cross sections. While the size of the perturbation remains similar, the intensity of the interaction changes dramatically over the visible spectrum. Numerical simulations allow us to distinguish the effects of scattering and absorption in the nanowire leading to these phenomena. This work provides a visual understanding of light absorption in semiconductor nanowire structures, which is of high interest for solar energy conversion applications.LMS

Tuning adatom mobility and nanoscale segregation by twin formation and polytypism

Nanoscale variations in the composition of an AlxGa1−xAs shell around a GaAs nanowire affect the nanowire functionality and can lead to the formation of localized quantum emitters. These composition fluctuations can be the consequence of variations of crystal phase and/or nanoscale adatom mobility. By applying electron-microscopy-related techniques we correlate the optical, compositional and structural properties at the nanoscale on the same object. The results indicate a clear correlation between the twin density in the nanowire and the quantum-emitter density as well as a significant redshift in the emission. We propose that twinning increases nanoscale segregation effects in ternary alloys. An additional redshift in the emission can be explained by the staggered band alignment between wurtzite and zinc-blende phases. This work opens new avenues in the achievement of homogeneous ternary and quaternary alloys in nanowires and in the engineering of the segregation effects at the nanoscale

Increased Photoconductivity Lifetime in GaAs Nanowires by Controlled n-Type and p-Type Doping.

Controlled doping of GaAs nanowires is crucial for the development of nanowire-based electronic and optoelectronic devices. Here, we present a non-contact method based on time resolved terahertz photoconductivity for assessing n and p type doping efficiency in nanowires. Using this technique, we measure extrinsic electron and hole concentrations in excess of 10(18)cm(-3) for GaAs nanowires with n-type and p-type doped shells. Furthermore, we show that controlled doping can significantly increase the photoconductivity lifetime of GaAs nanowires by over an order of magnitude: from 0.13ns in undoped nanowires to 3.8ns and 2.5ns in n-doped and p-doped nanowires respectively. Thus, controlled doping can be used to reduce the effects of parasitic surface recombination in optoelectronic nanowire devices, which is promising for nanowire devices such as solar cells and nanowire lasers

Wetting of Ga on SiOx and Its Impact on GaAs Nanowire Growth

Ga-assisted growth of GaAs nanowires on silicon provides a path for integrating high-purity III-Vs on silicon. The nature of the oxide on the silicon surface has been shown to impact the overall possibility of nanowire growth and their orientation with the substrate. In this work, we show that not only the exact thickness, but also the nature of the native oxide determines the feasibility of nanowire growth. During the course of formation of the native oxide, the surface energy varies and results in a different contact angle of Ga droplets. We find that, only for a contact angle around 90 degrees (i.e., oxide thickness similar to 0.9 nm), nanowires grow perpendicularly to the silicon substrate. This native oxide engineering is the first step toward controlling the self-assembly process, determining mainly the nanowire density and orientation

Ga-assisted growth of GaAs nanowires on silicon, comparison of surface SiOx of different nature

Physical properties of surfaces are extremely important for initiation and nucleation of crystal growth, including nanowires. In recent years, fluctuations in surface characteristics have often been related to unreproducible growth of GaAs nanowires on Si by the Ga-assisted method. We report on a systematic study of the occurrence of GaAs nanowire growth on silicon by the Ga-assisted method for different kinds of silicon oxides: native, thermal and hydrogen silsesquioxane (HSQ). We find that success in achieving nanowires and the growth conditions such as gallium rate and substrate temperature depend mainly on the physical properties of the surface: oxide stoichiometry, oxide thickness and surface roughness. These results constitute a step further towards the integration of GaAs technology on the Si platform. (C) 2014 Elsevier B.V. All rights reserved