Stability improvement of an efficient graphene nanoribbon field-effect transistor-based sram design

The development of the nanoelectronics semiconductor devices leads to the shrinking of transistors channel into nanometer dimension. However, there are obstacles that appear with downscaling of the transistors primarily various short-channel effects. Graphene nanoribbon field-effect transistor (GNRFET) is an emerging technology that can potentially solve the issues of the conventional planar MOSFET imposed by quantum mechanical (QM) effects. GNRFET can also be used as static random-access memory (SRAM) circuit design due to its remarkable electronic properties. For high-speed operation, SRAM cells are more reliable and faster to be effectively utilized as memory cache. The transistor sizing constraint affects conventional 6T SRAM in a trade-off in access and write stability. This paper investigates on the stability performance in retention, access, and write mode of 15 nm GNRFET-based 6T and 8T SRAM cells with that of 16 nm FinFET and 16 nm MOSFET. The design and simulation of the SRAM model are simulated in synopsys HSPICE. GNRFET, FinFET, and MOSFET 8T SRAM cells give better performance in static noise margin (SNM) and power consumption than 6T SRAM cells. The simulation results reveal that the GNRFET, FinFET, and MOSFET-based 8T SRAM cells improved access static noise margin considerably by 58.1%, 28%, and 20.5%, respectively, as well as average power consumption significantly by 97.27%, 99.05%, and 83.3%, respectively, to the GNRFET, FinFET, and MOSFET-based 6T SRAM design. © 2020 Mathan Natarajamoorthy et al. This is an open access article distributed under the Creative Commons Attribution License, which permits unrestricted use, distribution, and reproduction in any medium, provided the original work is properly cited

PERFORMANCE ANALYSIS OF AN ENERGY EFFICIENT FFT PROCESSOR USING 32nm CMOS TECHNOLOGY

ABSTRACT This paper presents an energy-efficient Fast Fourier Transform (FFT) processor which meets the requirements of DSP applications. Fast Fourier Transform is one of the widely used digital signals processing (DSP) algorithms which analysis the signal in its frequency domain. Modified DOMS-FF (Duration Observation Master Slave-Flip Flop) is introduced to reduce the power dissipation and makes the computation of the result much faster than the existing system. The goal of this work is to get less area and energy efficient FFT processor with build in all requirements necessary for DSP applications

Performance Analysis of Montgomery Multiplier using 32nm CNTFET Technology

In VLSI design vacillating the parameters results in variation of critical factors like area, power and delay. The dominant sources of power dissipation in digital systems are the digital multipliers. A digital multiplier plays a major role in a mixture of arithmetic operations in digital signal processing applications hinge on add and shift algorithms. In order to accomplish high execution speed, parallel array multipliers are comprehensively put into application. The crucial drawback of these multipliers is that it exhausts more power than any other multiplier architectures. Montgomery Multiplication is the popularly used algorithm as it is the most efficient technique to perform arithmetic based calculations. A high-speed multiplier is greatly coveted for its extraordinary leverage. The primary blocks of a multiplier are basically comprised of adders. Thus, in order to attain a significant reduction in power consumption at the chip level the power utilization in adders can be decreased. To obtain desired results in performance parameters of the multiplier an efficient and dynamic adder is proposed and incorporated in the Montgomery multiplier. The Carbon Nanotube field effect transistor (CNTFET) is a promising new device that may supersede some of the fundamental limitations of a silicon based MOSFET. The architecture has been designed in 130nm and 32nm CMOS and CNTFET technology in Synopsys HSpice. The analysed parameters that are considered in determining the performance are power delay product, power and delay and comparison is made with both the technologies.The simulation results of this paper affirmed the CNTFET based Montgomery multiplier improved power consumption by 76.47% ,speed by 72.67% and overall energy by 67.76% as compared to MOSFET-based Montgomery multiplier

HLA-DR phenotypes and lymphocyte response to M. tuberculosis antigens and in cured spinal tuberculosis patients and their contacts

Background: Our earlier studies on Human Leucocyte Antigens (HLA) in pulmonary tuberculosis patients revealed the association of HLA-DR2 antigen with susceptibility to pulmonary TB and DR2 antigen has been shown to influence the immunity to tuberculosis. Objectives: The present study was carried out to find out whether HLA-DR antigens are associated with susceptibility to spinal tuberculosis. Moreover, the role of HLA-DR antigens on lymphoproliferative response to Mycobacterium tuberculosis culture filtrate antigens was studied using Lymphocyte Transformation Test (LTT). Material and Methods: HLA-DR genotyping and lymphoproliferative response was carried out in 63 cured spinal TB patients and 63 control subjects (spouses of pulmonary and spinal TB patients). Results: A trend towards an increased frequency of HLA-DR9 antigen was observed in spinal TB patients compared to controls. A significantly decreased lymphocyte response to M. tuberculosis antigens was observed in HLA-DR9 antigen positive control subjects compared to HLA- DR9 antigen negative subjects (P=0.0009) whereas increased response was observed with DR9 positive cured spinal TB patients compared to HLA-DR9 antigen negative patients. Further, HLADR3 antigen positive patients showed a decreased lymphocyte response compared to HLA-DR3 antigen negative patients (P<0.05). Conclusion: The study suggests that HLA-DR9 antigen either alone or in combination with other HLA antigen as lhplotype and non-HLA genes may be associated with susceptibility to spinal TB and play a regulatory role on the immune response to M. tuberculosis in spinal tuberculosis patients

Perinatal testicular torsion - Not an uncommon entity

Perinatal testicular torsion is a rare condition with an incidence of 1 in 7500 live births. 70% are prenatal and 30% postnatal. Postnatal torsion presents as an acute scrotum, whereas prenatal torsion may be usually missed as it is a non-tender hard mass. Management of prenatal torsion is controversial. We are reporting three such case series presenting within a period of 1 year. Prenatal testicular torsion is usually missed as it is asymptomatic and later presents as cryptorchid. Careful postnatal physical examination and documentation is essential, as a missed case can later present as cryptorchid and may lead to medicolegal issues. In torsion in the immediate perinatal period, the testis may be salvaged if promptly operated

Quasi-Elastic Scattering, Random Fields and phonon-coupling effects in PbMg1/3Nb2/3O3

The low-energy part of the vibration spectrum in PbMg$_{1/3}$Nb$_{2/3}$O$_3$ (PMN) relaxor ferroelectric has been studied by neutron scattering above and below the Burns temperature, T$_d$. The transverse acoustic and the lowest transverse optic phonons are strongly coupled and we have obtained a model for this coupling. We observe that the lowest optic branch is always underdamped. A resolution-limited central peak and quasi-elastic scattering appear in the vicinity of the Burns temperature. It is shown that it is unlikely that the quasi-elastic scattering originates from the combined effects of coupling between TA and TO phonons with an increase of the damping of the TO phonon below T$_d$. The quasi-elastic scattering has a peak as a function of temperature close to the peak in the dielectric constant while the intensity of the central peak scattering increases strongly below this temperature. These results are discussed in terms of a random field model for relaxors

Performance analysis of an efficient montgomery multiplier using 7nm FinFET and junctionless FinFET

The digital multipliers are the assertive sources of power exhaustion in the modern digital systems. To perform most efficient arithmetic based calculations, Montgomery multiplication can be one of the best alternatives for other conventional methods in digital architecture as high-speed multipliers are desired for its remarkable performance. The main drawback of the digital multipliers is that power exhaustion is very high when compared to the other elements of the digital circuit. Shift register is the one of the most important component in a digital multiplier which consumes comparatively higher power than the other components. Shift registers contains a series of D-flip flops to store the digital data. In order to obtain a notable improvement in terms of power consumption at the chip level, the flip-flop can be modified to achieve the reduction of average power in the multiplier. The Fin-Field Effect Transistor (FinFET) is a promising candidate to overcome fundamental limitations of its Silicon based alternative MOSFET. However, there seems to be an increase in leakage power and delay. The Junctionless FinFET with uniform doping in the channel proves to offer a better performance in terms of overall speed, power consumption and power delay product. The architecture has been designed in 7nm FinFET and JL-FinFET in Synopsys HSpice and Silvaco TCAD. The results of the Montgomery Multiplier affirms that the overall energy is improved by 55% and speed of the device by 35% as compared to the existing Montgomery Multiplier

A Neutron Elastic Diffuse Scattering Study of PMN

We have performed elastic diffuse neutron scattering studies on the relaxor Pb(Mg$_{1/3}$Nb$_{2/3}$)O$_3$ (PMN). The measured intensity distribution near a (100) Bragg peak in the (hk0) scattering plane assumes the shape of a butterfly with extended intensity in the (110) and (1$\bar{1}$0) directions. The temperature dependence of the diffuse scattering shows that both the size of the polar nanoregions (PNR) and the integrated diffuse intensity increase with cooling even for temperatures below the Curie temperature $T_C \sim 213$ K.Comment: Submitted to PR

Coexistence of the Critical Slowing Down and Glassy Freezing in Relaxor Ferroelectrics

We have developed a dynamical model for the dielectric response in relaxor ferroelectrics which explicitly takes into account the coexistence of the critical slowing down and glassy freezing. The application of the model to the experiment in PMN allowed for the reconstruction of the nonequilibrium spin glass state order parameter and its comparison with the results of recent NMR experiment (Blinc et al., Phys. Rev. Lett. 83, No. 2 (1999)). It is shown that the degree of the local freezing is rather small even at temperatures where the field-cooled permittivity exceeds the frequency dependent permittivity by an order of magnitude. This observation indicates the significant role of the critical slowing down (accompanying the glass freezing) in the system dynamics. Also the theory predicts an important interrelationship between the frequency dependent permittivity and the zero-field-cooled permittivity, which proved to be consistent with the experiment in PMN (A. Levstik et. al., Phys. Rev. B 57, 11204 (1998))

The Structural Phase Transition of the Relaxor Ferroelectric 68%PbMg1/3Nb2/3O3-32%PbTiO3

Neutron scattering techniques have been used to study the relaxor ferroelectric 0.68PbMg1/3Nb2/3O3-0.32PbTiO3 denoted in this paper as 0.68PMN-0.32PT. On cooling, these relaxor ferroelectrics have a long-range ordered ferroelectric phase and the composition is close to that at which the ferroelectric structure changes from rhombohedral to tetragonal. It was found that above the Burns temperature of about 600K, the transverse optic mode and the transverse acoustic mode are strongly coupled and a model was used to describe this coupling that gave similar parameters to those obtained for the coupling in PMN. Below the Burns temperature additional quasi-elastic scattering was found which increased in intensity as the sample was cooled down to the ferroelectric transition temperature but then decreased in intensity. This behaviour is similar to that found in PMN. This scattering is associated with the dynamic polar nano-regions that occur below the Burns temperature. In addition to this scattering a strictly elastic resolution limited peak was observed that was much weaker than the corresponding peak in pure PMN and which decreased in intensity on cooling below the ferroelectric phase whereas for PMN, which does not have a long-range ordered ferroelectric phase, the intensity of this component increased monotonically as the sample was cooled. The results of our study are compared with the recent measurements of Stock et al. [PRB 73 064107] who studied 0.4PMN-0.6PT. The results are qualitatively consistent with the random field model developed to describe the scattering from PMN