Silicon Photonics The Next Revolution in Telecom and Beyond

Esta conferencia versará sobre la fotónica del silicio, una tecnología de reciente aparición que permite construir dispositivos ópticos integrados utilizando las mismas técnicas de fabricación que las empleadas en la industria de semiconductores (tecnología CMOS). Por tanto, es una tecnología que abre la puerta al uso masivo de la tecnología óptica integrada en diversas aplicaciones, incluyendo: comunicaciones por fibra óptica, centros de datos, medicina, monitorización del medio ambiente... El Prof. Mashanovich aprovechará para mostrarnos los últimos avances que su grupo está realizando en este área, incluyendo la actividad sobre moduladores y detectores para la banda de comunicaciones ópticas, así como nuevas líneas de investigación en el infrarrojo medio. El Optoelectronic Research Centre de la Universidad de Southampton es uno de los centros líder en la docencia e investigación en fotónica. A lo largo de su historia han realizado numerosos descubrimientos e invenciones y cuentan también con una dilatada experiencia en la transferencia del conocimiento a la industria. Entre sus invenciones más conocidas está el Amplificador óptico de Fibra Dopada de Erbio (EDFA), componente muy usado en las redes de fibra óptica, sin el que no serían posibles las actuales autopistas de la información.Universidad de Málaga. Campus de Excelencia Internacional Andalucía Tec

Low temperature silicon nitride waveguides for multilayer platforms

Several 3D multilayer silicon photonics platforms have been proposed to provide densely integrated structures for complex integrated circuits. Amongst these platforms, great interest has been given to the inclusion of silicon nitride layers to achieve low propagation losses due to their capacity of providing tight optical confinement with low scattering losses in a wide spectral range. However, none of the proposed platforms have demonstrated the integration of active devices. The problem is that typically low loss silicon nitride layers have been fabricated with LPCVD which involves high processing temperatures (<1000 ºC) that affect metallisation and doping processes that are sensitive to temperatures above 400ºC. As a result, we have investigated ammonia-free PECVD and HWCVD processes to obtain high quality silicon nitride films with reduced hydrogen content at low temperatures. Several deposition recipes were defined through a design of experiments methodology in which different combinations of deposition parameters were tested to optimise the quality and the losses of the deposited layers. The physical, chemical and optical properties of the deposited materials were characterised using different techniques including ellipsometry, SEM, FTIR, AFM and the waveguide loss cut-back method. Silicon nitride layers with hydrogen content between 10-20%, losses below 10dB/cm and high material quality were obtained with the ammonia-free recipe. Similarly, it was demonstrated that HWCVD has the potential to fabricate waveguides with low losses due to its capacity of yielding hydrogen contents <10% and roughness <1.5nm

Demonstration of silicon-on-insulator mid-infrared spectrometers operating at 3.8µm

The design and characterization of silicon-on-insulator mid- infrared spectrometers operating at 3.8µm is reported. The devices are fabricated on 200mm SOI wafers in a CMOS pilot line. Both arrayed waveguide grating structures and planar concave grating structures were designed and tested. Low insertion loss (1.5-2.5dB) and good crosstalk characteristics (15-20dB) are demonstrated, together with waveguide propagation losses in the range of 3 to 6dB/cm

Hot-wire chemical vapour deposition for silicon nitride waveguides

In this work, we demonstrate the use of HWCVD as an alternative technique to grow SiN layers for photonic waveguides at temperatures <400ºC. In particular, the effect of the ammonia flow and the filament temperature on the material structure, optical properties and propagation losses of the deposited films was investigated. SiN layers with good thickness uniformity, roughness as low as 0.61nm and H concentration as low as 10.4×1021 atoms/cm3 were obtained. Waveguides fabricated on the studied materials exhibited losses as low as 7.1 and 12.3 dB/cm at 1310 and 1550nm respectively

Nonlinear applications in the mid-infrared regime based on germanium on silicon platform

This abstract reviews our progress in characterizing nonlinear properties of low loss germanium-on-silicon waveguides in the mid-infrared wavelength. All-optical modulation is demonstrated in these waveguides and indicates the suitability of this platform for nonlinear applications in this long wavelength regime

Recent breakthroughs in carrier depletion based silicon optical modulators

The majority of the most successful optical modulators in silicon demonstrated in recent years operate via the plasma dispersion effect and are more specifically based upon free carrier depletion in a silicon rib waveguide. In this work we overview the different types of free carrier depletion type optical modulators in silicon. A summary of some recent example devices for each configuration is then presented together with the performance that they have achieved. Finally an insight into some current research trends involving silicon based optical modulators is provided including integration, operation in the mid-infrared wavelength range and application in short and long haul data transmission link

Localised tuneable composition single crystal silicon-germanium-on-insulator for low cost devices

The realisation of high quality silicon-germanium-on-insulator (SGOI) is a major goal for the field of silicon photonics because it has the potential to enable extremely low power active devices functioning at the communication wavelengths of 1.3 µm and 1.55 µm. In addition, SGOI has the potential to form faster electronic devices such as BiCMOS transistors, and could also form the backbone of a new silicon photonics platform that extends into the mid-IR wavelengths for applications in, amongst others, sensing and telecoms. In this paper, we present a novel method of forming single crystal, defect free SGOI using a rapid melt growth technique. We use tailored structures to form localised uniform composition SGOI strips, which are suitable for state of the art device fabrication. This technique could pave the way for the seamless integration of electronic and photonic devices using only a single, low cost Ge deposition step

Suspended silicon integrated platform for the long-wavelength mid-infrared band

The atmospheric-transmission window and the fingerprint region of many substances overlaps with the long-wave infrared band. This has enabled the emergence of a new path for photonic integrated circuits, which could exploit the potential applications of this wavelength range, including chemical and bio sensing. In this work we review our latest advances in the suspended silicon platform with subwavelength grating lateral cladding at 7.7-µm wavelength. Suspended waveguides only require one lithographic etch step and can be specifically designed to maximize sensitivity when used as sensors. Waveguides with propagation loss of 3.1±0.3 dB/cm are demonstrated, as well as bends with less than 0.1 dB/bend. Suspended waveguides based on shifted Bragg grating lateral cladding are also reported, with propagation loss of 5.1±0.6 dB/cm. These results prepare the ground for the development of a platform capable of covering the entire mid-infrared band. Keywords: suspended silicon, mid-infrared, long-wave infrared, subwavelength grating, Bragg.Universidad de Málaga. Campus de Excelencia Internacional Andalucía Tech

Subwavelength metamaterial engineering for silicon photonics

Waveguides structured at the subwavelength scale frustrate di raction and behave as optical metamaterials with controllable refractive index. These structures have found widespread applications in silicon photonics, ranging from sub-decibel e ciency bre-chip couplers to spectrometers and polarization rotators. Here, we briefly describe the design foundations for sub-wavelength waveguide devices, both in terms of analytic e ective medium approximations, as well as through rigorous Floch-Bloquet mode simulation. We then focus on two novel structures that exemplify the use of subwavelength waveguides: mid-infrared waveguides and ultra-broadband beamsplitters.Universidad de M alaga,Campus de Excelencia Internacional Andalucía Tech. Ministerio de Econom a y Competitividad, Programa Estatal de Investigación, Desarrollo e Innovación Orientada a los Retos de la Sociedad (cofi nanciado FEDER), Proyecto TEC2013-46917-C2-1-R, Proyecto TEC2016-80718-