Control of electric current by graphene edge structure engineering

In graphene nanoribbon junctions, the nearly perfect transmission occurs in some junctions while the zero conductance dips due to anti-resonance appear in others. We have classified the appearance of zero conductance dips for all combinations of ribbon and junction edge structures. These transport properties do not attribute to the whole junction structure but the partial corner edge structure, which indicates that one can control the electric current simply by cutting a part of nanoribbon edge. The ribbon width is expected to be narrower than 10 nm in order to observe the zero conductance dips at room temperature.Comment: accepted for publication in Appl. Phys. Let

Electronic transport properties of graphene nanoribbons

We will present brief overview on the electronic and transport properties of graphene nanoribbons focusing on the effect of edge shapes and impurity scattering. The low-energy electronic states of graphene have two non-equivalent massless Dirac spectrum. The relative distance between these two Dirac points in the momentum space and edge states due to the existence of the zigzag type graphene edges are decisive to the electronic and transport properties of graphene nanoribbons. In graphene nanoribbons with zigzag edges, two valleys related to each Dirac spectrum are well separated in momentum space. The propagating modes in each valley contain a single chiral mode originating from a partially flat band at band center. This feature gives rise to a perfectly conducting channel in the disordered system, if the impurity scattering does not connect the two valleys, i.e. for long-range impurity potentials. On the other hand, the low-energy spectrum of graphene nanoribbons with armchair edges is described as the superposition of two non-equivalent Dirac points of graphene. In spite of the lack of well-separated two valley structures, the single-channel transport subjected to long-ranged impurities is nearly perfectly conducting, where the backward scattering matrix elements in the lowest order vanish as a manifestation of internal phase structures of the wavefunction. Symmetry considerations lead to the classification of disordered zigzag ribbons into the unitary class for long-range impurities, and the orthogonal class for short-range impurities. However, no such crossover occurs in armchair nanoribbons

Faster Compact On-Line Lempel-Ziv Factorization

We present a new on-line algorithm for computing the Lempel-Ziv factorization of a string that runs in $O(N\log N)$ time and uses only $O(N\log\sigma)$ bits of working space, where $N$ is the length of the string and $\sigma$ is the size of the alphabet. This is a notable improvement compared to the performance of previous on-line algorithms using the same order of working space but running in either $O(N\log^3N)$ time (Okanohara & Sadakane 2009) or $O(N\log^2N)$ time (Starikovskaya 2012). The key to our new algorithm is in the utilization of an elegant but less popular index structure called Directed Acyclic Word Graphs, or DAWGs (Blumer et al. 1985). We also present an opportunistic variant of our algorithm, which, given the run length encoding of size $m$ of a string of length $N$, computes the Lempel-Ziv factorization on-line, in $O\left(m \cdot \min \left\{\frac{(\log\log m)(\log \log N)}{\log\log\log N}, \sqrt{\frac{\log m}{\log \log m}} \right\}\right)$ time and $O(m\log N)$ bits of space, which is faster and more space efficient when the string is run-length compressible

Using Conservative Estimation for Conditional Probability instead of Ignoring Infrequent Case

There are several estimators of conditional probability from observed frequencies of features. In this paper, we propose using the lower limit of confidence interval on posterior distribution determined by the observed frequencies to ascertain conditional probability. In our experiments, this method outperformed other popular estimators.Comment: The 2016 International Conference on Advanced Informatics: Concepts, Theory and Application (ICAICTA2016

Leukemogenesis in Down syndrome

The incidence of leukemia is higher in Down syndrome children than that in the general population, while the risk of solid tumors is significantly reduced in Down syndrome. Recent studies utilizing mouse models have shown that distinct mechanisms caused by the elevated dosage of multiple genes is implicated in the protection from tumor progression depending on the type of solid neoplasm. In contrast, increased incidence of mutation in the several specific genes is reported as a cause of the onset of leukemias. Especially, acquired mutations in the GATA1 gene are associated with leukemogenesis of megakaryoblastic leukemia (AMKL) and transient myeloproliferative disorder (TMD) related to Down syndrome. The mutations are clustered in the region corresponding to the N-terminal domain of GATA1 and result in the production of the short form of GATA1 (GATA1-S), which utilizes Met84 as an alternative translation initiation codon. Efforts producing mouse models of Down TMD and AMKL have been undertaken, as these models seem to provide important insights into the pathogenesis of multistep leukemogenesis. Concomitantly, the function of GATA1 has been examined extensively, and the analyses present a prototype for the study of lineage-restricted transcription factors that play an essential role for the differentiation, proliferation, and apoptosis of erythroid cells, megakaryocytes, mast cells, and eosinophils. In this chapter, we will summarize recent progress in the studies of leukemias that occur in Down syndrome, especially in relation to GATA1 mutations

Critical Behavior in Doping-Driven Metal−-Insulator Transition on Single-Crystalline Organic Mott-FET

We present the carrier transport properties in the vicinity of a doping-driven Mott transition observed at a field-effect transistor (FET) channel using a single crystal of the typical two-dimensional organic Mott insulator $\kappa$-(BEDT-TTF)$_2$CuN(CN)$_2$Cl ($\kappa$-Cl).The FET shows a continuous metal$-$insulator transition (MIT) as electrostatic doping proceeds. The phase transition appears to involve two-step crossovers, one in Hall measurement and the other in conductivity measurement. The crossover in conductivity occurs around the conductance quantum $e^2/h$ , and hence is not associated with "bad metal" behavior, which is in stark contrast to the MIT in half-filled organic Mott insulators or that in doped inorganic Mott insulators. Through in-depth scaling analysis of the conductivity, it is found that the above carrier transport properties in the vicinity of the MIT can be described by a high-temperature Mott quantum critical crossover, which is theoretically argued to be a ubiquitous feature of various types of Mott transitions. [This document is the unedited Authors' version of a Submitted Work that was subsequently accepted for publication in Nano Letters, copyright \copyright American Chemical Society after peer review. To access the final edited and published work see http://dx.doi.org/10.1021/acs.nanolett.6b03817]Comment: 40 pages, 16 figures in Nano Letters, ASAP (2017