3 research outputs found
Electrical resistivity and electronic structure of the Tb xGd 1-xNi 3 system
In the paper the electric properties and electronic structure of the intermetallic TbxGd1xNi3 compounds are
presented. The partial replacement of Gd by Tb atoms causes the decrease of the Curie temperature (TC) and
the increase of the residual resistivity. According to the Matthiessen rule the scattering mechanisms in (T) have
been analyzed. Moreover, the reduced form of the electrical resistivity Z(T T0) indicates a deviation from the
linearity for x > 0:2. This kind of behaviour can be attributed to density of d states near by the Fermi level (EF)
which are dominated by Ni 3d states. The valence band spectra as well as the core level lines have been analyzed as the in uence of Tb/Gd substitution on the electronic structure
Magneto-history effect in the Tb xGd 1-xNi 3 Compounds
The compounds TbxGd1xNi3 with a PuNi3-type structure have been obtained. The magnetic properties
have been investigated by using SQUID magnetometer (Quantum Design MPMS, temperature from 1.9 K to
300 K and magnetic eld up to 7 T). The partial replacement of Gd by Tb atoms is re ected in a decrease of the
ordering temperature from 115 K (x = 0:0) to 81 K (x = 1:0) as well as the increase of the saturation magnetic
moment MS from 6.93 B/f.u. (x = 0:0) to 7.14 B/f.u. (x = 1:0). A large di erence of M(T) curves has been
noticed between the so-called eld cooling zero eld cooling magnetization. The thermomagnetic curves are
sensitive to the applied magnetic eld and their origin can be understood as the domain-wall pinning e ect and
as the temperature dependence of coercivity