2,852 research outputs found

    Nutrient supply from organic amendments applied to unvegetated soil, lettuce and orchardgrass

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    Organic sources of nutrients are increasingly being used in horticultural and certified organic production. The nutrient-supplying potentials of poultry manure compost (PM), feather meal (FM), alfalfa meal (AA) and vermicastings (VC) and an unamended control were measured in a growth room experiment. The amendments were applied at rates equivalent to 200, 400 and 800 kg total N ha-1 to a soil of low fertility. Nitrogen supply rates and concentrations were measured over 6 mo in unvegetated pots using PRS™ probes and KCl extraction, respectively. Biomass of lettuce (Lactuca sativa L.) and orchardgrass (Dactylis glomerata L.) and N uptake of orchardgrass were measured. Repeated measures analysis revealed significant amendment × rate × time interaction effects for N supply rate and concentration. Of total N applied, available N was 50 to 70% in the FM and PM treatments, 10 to 40% in the AA treatments, and 10% in the VC treatments. High rates of FM and PM were toxic to lettuce but produced good orchardgrass yields. VC was safe for lettuce but low N availability limited long-term orchardgrass growth. Higher application rates did not result in corresponding increases in nutrient supply. Consideration should be given to balancing the ratio of available nutrients in amendments with plant requirements

    Optical spectroscopy of gan microcavities with thicknesses controlled using a plasma etch-back

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    The effect of an etch-back step to control the cavity length within GaN-based microcavities formed between two dielectric Bragg mirrors was investigated using photoluminescence and reflectivity. The structures are fabricated using a combination of a laser lift-off technique to separate epitaxial III-N layers from their sapphire substrates and electron-beam evaporation to deposit silica/zirconia multilayer mirrors. The photoluminescence measurements reveal cavity modes from both etched and nonetched microcavities. Similar cavity finesses are measured for 2.0 and 0.8 mm GaN cavities fabricated from the same wafer, indicating that the etchback has had little effect on the microcavity quality. For InGaN quantum well samples the etchback is shown to allow controllable reduction of the cavity length. Two etch steps of 100 nm are demonstrated with an accuracy of approximately 5%. The etchback, achieved using inductively coupled plasma and wet chemical etching, allows removal of the low-quality GaN nucleation layer, control of the cavity length, and modification of the surface resulting from lift-off

    Use of AlInN layers in optical monitoring of growth of GaN-based structures on free-standing GaN substrates

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    When lattice matched to GaN, the AlInN ternary alloy has a refractive index ~7% lower than that of GaN. This characteristic can be exploited to perform in situ reflectometry during epitaxial growth of GaN-based multilayer structures on free-standing GaN substrates, by insertion of a suitable Al0.82In0.18N layer. The real-time information on growth rates and cumulative layer thicknesses thus obtainable is particularly valuable in the growth of optical resonant cavity structures. We illustrate this capability with reference to the growth of InGaN/GaN multiple quantum-well structures, including a doubly periodic structure with relatively thick GaN spacer layers between groups of wells. Al0.82In0.18N insertion layers can also assist in the fabrication of resonant cavity structures in postgrowth processing, for example, acting as sacrificial layers in a lift-off process exploiting etch selectivity between Al0.82In0.18N and GaN

    (In,Ga)N/GaN microcavities with double dielectric mirrors fabricated by selective removal of an (Al,In)N sacrificial layer

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    Comparable microcavities with 3/2 (~240 nm) active regions containing distributed (In,Ga)N quantum wells, grown on GaN substrates and bounded by two dielectric mirrors, have been fabricated by two different routes: one using laser lift-off to process structures grown on GaN-on-sapphire templates and the second using freestanding GaN substrates, which are initially processed by mechanical thinning. Both exploit the properties of an Al0.83In0.17N layer, lattice matched to the GaN substrate and spacer layers. In both cases cavity quality factors >400 are demonstrated by measurements of the cavity-filtered room-temperature excitonic emission near 410 nm

    Discounting in Games across Time Scales

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    We introduce two-level discounted games played by two players on a perfect-information stochastic game graph. The upper level game is a discounted game and the lower level game is an undiscounted reachability game. Two-level games model hierarchical and sequential decision making under uncertainty across different time scales. We show the existence of pure memoryless optimal strategies for both players and an ordered field property for such games. We show that if there is only one player (Markov decision processes), then the values can be computed in polynomial time. It follows that whether the value of a player is equal to a given rational constant in two-level discounted games can be decided in NP intersected coNP. We also give an alternate strategy improvement algorithm to compute the value

    Water surface height determination with a GPS wave glider: a demonstration in Loch Ness, Scotland

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    A geodetic GPS receiver has been installed on a Wave Glider, an unmanned water surface vehicle. Using kinematic precise point positioning (PPP) GPS, which operates globally without directly requiring reference stations, surface heights are measured with ~0.05-m precision. The GPS Wave Glider was tested in Loch Ness, Scotland, by measuring the gradient of the loch’s surface height. The experiment took place under mild weather, with virtually no wind setup along the loch and a wave field made mostly of ripples and wavelets. Under these conditions, the loch’s surface height gradient should be approximately equal to the geoid slope. The PPP surface height gradient and that of the Earth Gravitational Model 2008 geoid heights do indeed agree on average along the loch (0.03 m km−1). Also detected are 1) ~0.05-m-sized height changes due to daily water pumping for hydroelectricity generation and 2) high-frequency (0.25–0.5 Hz) oscillations caused by surface waves. The PPP heights compare favorably (~0.02-m standard deviation) with relative carrier phase–based GPS processing. This suggests that GPS Wave Gliders have the potential to autonomously determine centimeter-precise water surface heights globally for lake modeling, and also for applications such as ocean modeling and geoid/mean dynamic topography determination, at least for benign surface states such as those encountered during the reported experiment

    Noise Kernel and Stress Energy Bi-Tensor of Quantum Fields in Hot Flat Space and Gaussian Approximation in the Optical Schwarzschild Metric

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    Continuing our investigation of the regularization of the noise kernel in curved spacetimes [N. G. Phillips and B. L. Hu, Phys. Rev. D {\bf 63}, 104001 (2001)] we adopt the modified point separation scheme for the class of optical spacetimes using the Gaussian approximation for the Green functions a la Bekenstein-Parker-Page. In the first example we derive the regularized noise kernel for a thermal field in flat space. It is useful for black hole nucleation considerations. In the second example of an optical Schwarzschild spacetime we obtain a finite expression for the noise kernel at the horizon and recover the hot flat space result at infinity. Knowledge of the noise kernel is essential for studying issues related to black hole horizon fluctuations and Hawking radiation backreaction. We show that the Gaussian approximated Green function which works surprisingly well for the stress tensor at the Schwarzschild horizon produces significant error in the noise kernel there. We identify the failure as occurring at the fourth covariant derivative order.Comment: 21 pages, RevTeX

    Site multiplicity of rare earth ions in III-nitrides

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    This presentation reviews recent lattice location studies of RE ions in GaN by electron emission channelling (EC) and X-ray absorption fine structure (XAFS) techniques. These studies agree that RE ions at low concentrations (whether they are incorporated during growth or introduced later by ion implantation) predominantly occupy Ga substitutional sites, as expected from considerations of charge equivalence. We combine this result with some examples of the welldocumented richness of optical spectra of GaN:RE3+ to suggest that the luminescence of these materials may be ascribed to a family of rather similar sites, all of which feature the REGa defect

    Correlating Composition and Luminescence Variations in AlInGaN epilayers

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    Epilayers of the quaternary alloy AlxInyGa1 x yN have been grown on GaN/sapphire templates by plasma-assisted molecular beam epitaxy. The emission properties and elemental compositions of these samples were evaluated simultaneously and intercorrelated by combining hyperspectral cathodoluminescence imaging and wavelength-dispersive X-ray mapping. Use was made of inherent variations in growth temperature across a single epilayer to study the resultant effect on the different metal fractions and luminescence emission wavelength. By examining statistical correlations in this data, the interdependence of the fractions of constituent binary compounds, together with the associated changes in emission characteristics, can be clarified without the need to grow a systematic series of samples

    Self-Similarity in Random Collision Processes

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    Kinetics of collision processes with linear mixing rules are investigated analytically. The velocity distribution becomes self-similar in the long time limit and the similarity functions have algebraic or stretched exponential tails. The characteristic exponents are roots of transcendental equations and vary continuously with the mixing parameters. In the presence of conservation laws, the velocity distributions become universal.Comment: 4 pages, 4 figure
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