High efficiency laser action of 1% at. Yb 3+ :Sc 2 O 3 ceramic

We report the spectroscopic characteristics and the laser performances of a low-doped 1% at. Yb:Sc(2)O(3) ceramic sample. Under end- pumping at 933 nm and 968 nm in quasi-CW mode, at 1040.5 nm the laser delivers a maximum output power of 4.3 W and 1.77 W, respectively with a corresponding slope efficiency of 74% and 80%, which are, to the best of our knowledge, the highest value reported in literature for ceramics. We explored the tuning range of the sample, which spans from 1005 nm to 1050.5 nm, and finally we characterized the low losses tunable cavity at 1032 nm

ToyArchitecture: Unsupervised Learning of Interpretable Models of the World

Research in Artificial Intelligence (AI) has focused mostly on two extremes: either on small improvements in narrow AI domains, or on universal theoretical frameworks which are usually uncomputable, incompatible with theories of biological intelligence, or lack practical implementations. The goal of this work is to combine the main advantages of the two: to follow a big picture view, while providing a particular theory and its implementation. In contrast with purely theoretical approaches, the resulting architecture should be usable in realistic settings, but also form the core of a framework containing all the basic mechanisms, into which it should be easier to integrate additional required functionality. In this paper, we present a novel, purposely simple, and interpretable hierarchical architecture which combines multiple different mechanisms into one system: unsupervised learning of a model of the world, learning the influence of one's own actions on the world, model-based reinforcement learning, hierarchical planning and plan execution, and symbolic/sub-symbolic integration in general. The learned model is stored in the form of hierarchical representations with the following properties: 1) they are increasingly more abstract, but can retain details when needed, and 2) they are easy to manipulate in their local and symbolic-like form, thus also allowing one to observe the learning process at each level of abstraction. On all levels of the system, the representation of the data can be interpreted in both a symbolic and a sub-symbolic manner. This enables the architecture to learn efficiently using sub-symbolic methods and to employ symbolic inference.Comment: Revision: changed the pdftitl

Experimental evidence of a nonlinear loss mechanism in highly doped Yb:LuAG crystal

We report a rigorous study of the spectroscopic, laser and thermal properties of a 10at.% and a 15at.% Yb:LuAG crystals. A loss mechanism is observed in the medium with the highest doping, pumped at 936 nm and 968 nm, as a sharp and dramatic decrease of the laser output power is measured at higher excitation densities. The nonlinearity of the loss mechanism is confirmed by the fluorescence data and by the thermal lens. In particular, the dioptric power of the thermal lens acquired at different pumping levels shows a strong deviation of the expected linear trend. Here we report the influence of both the concentration and the ion excitation density of Yb3+ on the output powers, the slope efficiencies and the thresholds. Conversely excellent results are achieved with the 10at.%, which does not show any loss mechanism as at 1046 nm it delivers 11.8 W with a slope efficiency of eta(s) = 82%, which is, to the best of our knowledge, the highest value reported in literature for this material. (C) 2014 Optical Society of Americ

On low-temperature luminescence quenching in Gd3(Ga,Al)5O12:Ce crystals

The work was supported by the ERDF funding in Estonia granted to the Center of Excellence TK141 “Advanced materials and high-technology devices for sustainable energetics, sensorics and nanoelec-tronics“ (project No. 2014-2020.4.01.15-0011). Partial support of the projects from the Ministry of Education, Youth and Sports of the Czech Republic no. LO1409, LM2015088 and CZ.02.1.01/0.0/0.0/16 013/ 0001406 is also gratefully acknowledged.Temperature dependences of the photoluminescence and X-ray excited luminescence intensity and thermally stimulated luminescence glow curves are measured in the 4.2–300 K temperature range for the undoped and Ce3+ - doped Gd3(Ga,Al)5O12 crystals. The conclusion is made that no low-temperature quenching of the Ce3+ - related photoluminescence takes place. In both the undoped and the Ce3+ - doped crystals, temperature dependences of the X-ray excited recombination luminescence intensity correlate with the position and shape of thermally stimulated luminescence glow curve peaks of the hole origin. Low-temperature quenching of the X-ray excited luminescence in these crystals is explained by the fact that at low temperatures, free holes are trapped at oxygen ions while electrons are trapped at various intrinsic defects. In Ce3+ - doped Gd3(Ga,Al)5O12 crystals, thermally stimulated release of the trapped holes and electrons and their subsequent recombination at Ce3+ ions result in the enhancement of the Ce3+ - related electron recombination luminescence with the increasing temperature in the 10–180 K range.ERDF TK141 No. 2014-2020.4.01.15-0011; Ministry of Education, Youth and Sports of the Czech Republic no. LO1409, LM2015088 and CZ.02.1.01/0.0/0.0/16 013/ 0001406; Institute of Solid State Physics, University of Latvia as the Center of Excellence has received funding from the European Union’s Horizon 2020 Framework Programme H2020-WIDESPREAD-01-2016-2017-TeamingPhase2 under grant agreement No. 739508, project CAMART

Direct comparison of Yb3+:CaF2 and heavily doped Yb3+:YLF as laser media at room temperature.

We report an extensive comparison of the laser performances of diode-pumped Yb(3+):YLF (30% at.) and Yb(3+):CaF(2) (5% at.) crystals, lasing at room-temperature and operating in two different operation mode, i.e. Continuous Wave (CW) and quasi-CW. An in-depth investigation of the crystals behavior by changing the pump power, clearly shows the crystal absorption depends on the lasing conditions. Therefore, we report an unambiguous definition of the slope efficiency calculated taken into account the real measured crystal absorption under laser action. Finally, we present a study of problems related to thermally induced losses which are expected influencing the laser performance

Effect of Ga content on luminescence and defects formation processes in Gd3(Ga,Al)5O12:Ce single crystals

The work was supported by the Institutional Research Funding IUT02-26 of the Estonian Ministry of Education and Research and the project 16-15569S of the Czech Science Foundation.Luminescence characteristics of Ce3+ - doped Gd3GaxAl5-xO12 single crystals with different Ga contents (x = 1, 2, 3, 4, 5) are studied in the 9–500 K temperature range. The spectra of the afterglow, photoluminescence, radioluminescence, and thermally stimulated luminescence (TSL) of each crystal coincide. The increase of the Ga content results in the high-energy shift of the spectra while the radioluminescence intensity at 9 K remains practically constant up to x = 4. No Ce3+ emission is observed in case of x = 5. The total TSL intensity drastically increases, reaches the maximum value around x = 2–3, and then decreases due to the thermal quenching of the Ce3+ emission. The TSL glow curve maxima are gradually shifting to lower temperatures, and the dependence of the maxima positions and the corresponding trap depths on the Ga content is close to linear. However, the activation energy of the TSL peaks creation under irradiation of the crystals in the 4f – 5d1 absorption band of Ce3+ decreases drastically with the increasing Ga content (especially in the range of x = 1–2), and this dependence is found to be strongly nonlinear. Possible reasons of the nonlinearity are discussed.Estonian Ministry of Education and Research IUT02-26; Czech Science Foundation 16-15569S; Institute of Solid State Physics, University of Latvia as the Center of Excellence has received funding from the European Union’s Horizon 2020 Framework Programme H2020-WIDESPREAD-01-2016-2017-TeamingPhase2 under grant agreement No. 739508, project CAMART

Characterization of the lasing properties of a 5%Yb doped Lu_2SiO_5 crystal along its three principal dielectric axes

The laser performance of a 5% Yb doped Lu2SiO5 (Yb:LSO) has been investigated in quasi continuous-wave pumping regime along the three principal dielectric axes of the crystal, to obtain a complete characterization of its laser properties. The comparison among the obtained results for differently polarized lasers, in term of relative slope efficiency and absolute efficiency, allows the exploitability of different orientations of the material in order to be determined to obtain efficient laser sources. The laser slope efficiency and the energy conversion efficiency were similar for emission polarized along the three indicatrix axes, with noticeable maximum values of slope efficiency around 90% for polarization along the Y and Z axes. Tunable laser action has been obtained in the range 990 nm - 1084 nm, with sizeable differences in the shape of the tuning curve for polarization along the X, Y and Z axes. In particular, the tuning for polarization along the Z axis is relatively flat and uniform in the range 1023 nm - 1083 nm