Polarization-Resolved Near-Field Spectroscopy of Localized States in m-Plane InxGa1−xN/GaN Quantum Wells

Producción CientíficaWe present a polarization, spectrally, and spatially resolved near-field photoluminescence (PL) measurement technique and apply it to the study of wide m-plane InxGa1−xN/GaN quantum wells grown on on-axis and miscut GaN substrates. It is found that PL originates from localized states; nevertheless, its degree of linear polarization (DLP) is high with little spatial variation. This allows an unambiguous assignment of the localized states to InxGa1−xN composition-related band potential fluctuations. Spatial PL variations, occurring due to morphology features of the on-axis samples, play a secondary role compared to the variations of the alloy composition. The large PL peak wavelength difference for polarizations parallel and perpendicular to the c axis, the weak correlation between the peak PL wavelength and the DLP, and the temperature dependence of the DLP suggest that effective potential variations and the hole mass in the second valence-band level are considerably smaller than that for the first level. DLP maps for the long wavelength PL tails have revealed well-defined regions with a small DLP, which have been attributed to a partial strain relaxation around dislocations.Swedish Energy Agency (Contract No. 36652-1)Swedish Research Council (Contract No. 621-2013- 4096

EUPVSEC 2018

There are many characterization techniques available to evaluate the health of solar panels, such as I-V characterization, infrared thermography (IR), photoluminescence (PL) and electroluminescence (EL). EL imaging has become in recent years a powerful diagnostic tool to evaluate PV modules. EL images allow to detect several defects and degradation modes in the solar cells. The failures are observed as dark contrasted areas in the images. Broad dark regions can be detected even in a low resolution image, while a high resolution image is needed to detect some more specific problems such as cracks, multi-cracks or other line-shaped defects.PósterJunta de Castilla y León (programa de apoyo a proyectos de investigación - Ref. VA081U16)Ministerio de Economía, Industria y Competitividad (Proyect ENE2014-56069-C4-4-R

Influence of metal organic chemical vapour deposition growth conditions on vibrational and luminescent properties of ZnO nanorods

Producción CientíficaA detailed optical characterization by means of micro Raman and cathodoluminescence spectroscopy of catalyst-free ZnO nanorods grown by atmospheric-metal organic chemical vapour deposition has been carried out. This characterization has allowed correlating the growth conditions, in particular the precursors partial-pressures and growth time, with the optical properties of nanorods. It has been shown that a high Zn supersaturation can favor the incorporation of nonradiative recombination centers, which can tentatively be associated with ZnI-related defects. Characterization of individual nanorods has evidenced that ZnI-related defects have a tendency to accumulate in the tip part of the nanorods, which present dark cathodoluminescence contrast with respect to the nanorods bottom. The effect of a ZnO buffer layer on the properties of the nanorods has been also investigated, showing that the buffer layer improves the luminescence efficiency of the ZnO nanorods, revealing a significant reduction of the concentration of nonradiative recombination centers.Ministerio de Ciencia e Innovación (Projects MAT2007-66129, MAT-2010-20441-C02, MAT-2010-16116, and TEC2011-28076-C02-02)Generalitat Valenciana (Prometeo/2011-035 and ISIC/2012/008, Institute of Nanotechnologies for Clean Energies

Electrical activity of crystal defects in multicrystalline Si

Producción CientíficaUpgraded metallurgical-grade silicon solar cells with different ranges of efficiencies have been characterized by light-beam-induced current (LBIC) measurements. The interaction between grain boundaries and metallic impurities is studied for cells fabricated on wafers from different solidification heights of the ingot. A tight relation is observed between the electrical activity of the grain boundaries and the position of the wafer in the ingot, which is related to the impurity contamination. The presence of a large amount of metallic impurities enhances the electrical activity of the grain boundaries. The main features of the LBIC images are discussed in relation to the presence of metallic impurities.Junta de Castilla y León (project VA283P18)Ministerio de Economía, Industria y Competitividad (project ENE2017-89561-C4-3-R

Defect recognition by means of light and electron probe techniques for the characterization of mc-Si wafers and solar cells

Producción CientíficaMulticristalline Silicon (mc-Si) is the preferred material for current terrestrial photovoltaic applications. However, the high density of defects present in mc-Si deteriorates the material properties, in particular the minority carrier diffusion length. For this reason, a large effort to characterize the mc-Si material is demanded, aiming to visualize the defective areas and to quantify the type of defects, density and its origin. In this work, several complementary light and electron probe techniques are used for the analysis of both mc-Si wafers and solar cells. These techniques comprise both fast and whole-area detection techniques such as Photoluminescence imaging, and highly spatially resolved time consuming techniques, such as light and electron beam induced current techniques and μRaman spectroscopy. These techniques were applied to the characterization of different mc-Si wafers for solar cells, e.g. ribbon wafers, cast mc-Si as well as quasi-monocrystalline material, upgraded metallurgical mc-Si wafers, and finished solar cells.Junta de Castilla y León (programa de apoyo a proyectos de investigación - Ref. VA166A11-2)Ministerio de Ciencia e Innovación (Proyect IPT-420000-2010-022 INNPACTO)Ministerio de Economía, Industria y Competitividad (Project ENE2014-56069-C4-4-R

Optical and structural characterisation of epitaxial nanoporous GaN grown by CVD

Producción CientíficaIn this paper we study the optical properties of nanoporous gallium nitride (GaN) epitaxial layers grown by chemical vapour deposition on non-porous GaN substrates, using photoluminescence, cathodoluminescence, and resonant Raman scattering, and correlate them with the structural characteristic of these films. We pay special attention to the analysis of the residual strain of the layers and the influence of the porosity in the light extraction. The nanoporous GaN epitaxial layers are under tensile strain, although the strain is progressively reduced as the deposition time and the thickness of the porous layer increases, becoming nearly strain free for a thickness of 1.7 μm. The analysis of the experimental data point to the existence of vacancy complexes as the main source of the tensile strain.Ministerio de Economía, Industria y Competitividad (Projects No. TEC2014-55948-R and MAT2016-75716-C2-1-R (AEI/FEDER, UE)Junta de Castilla y León (programa de apoyo a proyectos de investigación – Ref. Projects VA293U13 and VA081U16)Comisión Interministerial de Ciencia y Tecnología (Proyect CICYT MAT2010-20441-C02)Ministerio de Economía, Industria y Competitividad (Projects No.ENE2014-56069-C4-4-R

Photoluminescence Imaging and LBIC Characterization of Defects in mc-Si Solar Cells

Today’s photovoltaic market is dominated by multicrystalline silicon (mc-Si) based solar cells with around 70% of worldwide production. In order to improve the quality of the Si material, a proper characterization of the electrical activity in mc-Si solar cells is essential. A full-wafer characterization technique such as photoluminescence imaging (PLi) provides a fast inspection of the wafer defects, though at the expense of the spatial resolution. On the other hand, a study of the defects at a microscopic scale can be achieved through the light-beam induced current technique. The combination of these macroscopic and microscopic resolution techniques allows a detailed study of the electrical activity of defects in mc-Si solar cells. In this work, upgraded metallurgical grade Si solar cells are studied using these two techniques.Ministerio de Economía, Industria y Competitividad (ENE2014-56069-C4-4-R)Junta de Castilla y León (programa de apoyo a proyectos de investigación – Ref. Project VA081U16

Residual Strain and Electrical Activity of Defects in Multicrystalline Silicon Solar Cells

Producción CientíficaThe growth process by casting methods of multi-crystalline Si results in a crystalline material with, among other defects, a high density of dislocations and grain boundaries. Impurity incorporation and their gathering around grain boundaries and dislocations seem to be the main factor determining the electrical activity of those defects, which limit the minority carrier lifetime. In this work, we analyze multi-crystalline Si samples by combining etching processes to reveal the defects, Raman spectroscopy for strain measurements, and light beam induced current measurements for the localization of electrically active defects. In particular, we have explored the etching routes capable to reveal the main defects (grain boundaries and dislocation lines), while their electrical activity is studied by the light beam induced current technique. We further analyze the strain levels around these defects by Raman micro-spectroscopy, aiming to obtain a more general picture of the correlation between residual stress and electrical activity of the extended defects. The higher stress levels are observed around intra-grain defects associated with dislocation lines, rather than around the grain boundaries. On the other hand, the intra-grain defects are also observed to give dark light beam induced current contrast associated with a higher electrical activity of these defects as compared to the grain boundariesJunta de Castilla y León (programa de apoyo a proyectos de investigación – Ref. A166A11-2)Ministerio de Ciencia e innovación (IPT-420000-2010- -022 INNPACTO program