Magneto-ionic control of spin polarization in multiferroic tunnel junctions

Magnetic tunnel junctions (MTJs) with Hf0.5Zr0.5O2 barriers are reported to show both tunneling magnetoresistance effect (TMR) and tunneling electroresistance effect (TER), displaying four resistance states by magnetic and electric field switching. Here we show that, under electric field cycling of large enough magnitude, the TER can reach values as large as 10^6%. Moreover, concomitant with this TER enhancement, the devices develop electrical control of spin polarization, with sign reversal of the TMR effect. Currently, this intermediate state exists for a limited number of cycles and understanding the origin of these phenomena is key to improve its stability. The experiments presented here point to the magneto-ionic effect as the origin of the large TER and strong magneto-electric coupling, showing that ferroelectric polarization switching of the tunnel barrier is not the main contribution

Spin electronic magnetic sensor based on functional oxides for medical imaging

8th Spintronics Symposium , AUG 09-13, 2015 , San Diego, CAInternational audienceTo detect magnetic signals coming from the body, in particular those produced by the electrical activity of the heart or of the brain, the development of ultrasensitive sensors is required. In this regard, magnetoresistive sensors, stemming from spin electronics, are very promising devices. For example, tunnel magnetoresistance (TMR) junctions based on MgO tunnel barrier have a high sensitivity. Nevertheless, TMR also often have high level of noise. Full spin polarized materials like manganite La0.67Sr0.33MnO3 (LSMO) are attractive alternative candidates to develop such sensors because LSMO exhibits a very low 1/f noise when grown on single crystals, and a TMR response has been observed with values up to 2000%. This kind of tunnel junctions, when combined with a high Tc superconductor loop, opens up possibilities to develop full oxide structures working at liquid nitrogen temperature and suitable for medical imaging. In this work, we investigated on LSMO-based tunnel junctions the parameters controlling the overall system performances, including not only the TMR ratio, but also the pinning of the reference layer and the noise floor. We especially focused on studying the effects of the quality of the barrier, the interface and the electrode, by playing with materials and growth condition

Magneto-optical properties of textured La2/3_{2/3}Sr1/3_{1/3}MnO3_3 thin films integrated on silicon via a Ca2_2Nb3_3O10_{10} nanosheet layer

We demonstrate the possibility of growing textured La$_{2/3}$Sr$_{1/3}$MnO$_3$ (LSMO) thin films on silicon substrates with magneto-optical and optical properties comparable to high-quality epitaxial layers grown on bulk SrTiO$_3$ (STO). The pulsed laser deposition growth of LSMO is achieved by a two-dimensional nanosheet (NS) seed layer of Ca$_2$Nb$_3$O$_{10}$ (CNO) inducing epitaxial stabilization of LSMO films. The resulting layers possess a higher Curie temperature and a lower overall magnetization than samples of LSMO on STO. Spectra of the full permittivity tensor were calculated from optical and magneto-optical measurements. Spectral dependencies of both the diagonal and off-diagonal elements share many similarities between the LSMO/NS/Si and LSMO/STO samples. These similarities indicate comparable electronic structures of the layers and demonstrate comparable optical quality of textured LSMO on NS/Si and epitaxial LSMO on STO

Etude expérimentale d'instabilités de croissance des faces vicinales

PARIS7-Bibliothèque centrale (751132105) / SudocSudocFranceF

X-ray characterization of textured tungsten coatings.

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Deformation of a “Rigid” Molecule in Self-Assembled Nanostructures

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Stabilization of the epitaxial rhombohedral ferroelectric phase in ZrO 2 by surface energy

International audienceDoped HfO2 and HfO2-ZrO2 compounds are gaining significant interest thanks to their ferroelectric properties in ultrathin films. Here, we show that ZrO2 could be a new playground for doping and strain engineering to increase the thickness in epitaxial thin films. Based on surface energy considerations supported by ab initio calculations, we find that pure ZrO2 exhibits a ferroelectric rhombohedral phase (r-phase, with R3m space group) more stable than for the HZO and pure HfO2 cases. In particular, for a thickness up to 37 nm we experimentally evidence a single (111)-oriented r-phase in ZrO2 films deposited on La2/3Sr1/3MnO3-buffered DyScO3(110) substrate. The formation of this r-phase is discussed and compared between HfO2, ZrO2 and HZO, highlighting the role of surface energy