Breakdown of step-flow growth in unstable homoepitaxy

Two mechanisms for the breakdown of step flow growth, in the sense of the appearance of steps of opposite sign to the original vicinality, are studied by kinetic Monte Carlo simulations and scaling arguments. The first mechanism is the nucleation of islands on the terraces, which leads to mound formation if interlayer transport is sufficiently inhibited. The second mechanism is the formation of vacancy islands due to the self-crossing of strongly meandering steps. The competing roles of the growth of the meander amplitude and the synchronization of the meander phase are emphasized. The distance between vacancy islands along the step direction appears to be proportional to the square of the meander wavelengthComment: 7 pages, 9 figure

Step velocity tuning of SrRuO3 step flow growth on SrTiO3

Taking advantage of vicinal (001) SrTiO3 substrates with different mean terrace widths, the heteroepitaxial growth of SrRuO3 in the step flow mode has been mapped as a function of mean step velocity. Transition between stable and unstable step flow is shown to occur at a well-defined critical step velocity, with a step bunching instability observed below this threshold. The ability to pass from unstable to stable step flow during growth upon increasing the mean step velocity is demonstrated. This result is discussed in terms of a stress-based driving force for step bunching in competition with an effective step-up adatom current.Comment: 4 pages, 3 figure

Effect of kink-rounding barriers on step edge fluctuations

The effect that an additional energy barrier E_{kr} for step adatoms moving around kinks has on equilibrium step edge fluctuations is explored using scaling arguments and kinetic Monte Carlo simulations. When mass transport is through step edge diffusion, the time correlation function of the step fluctuations behaves as C(t) = A(T) t^{1/4}. At low temperatures the prefactor A(T) shows Arrhenius behavior with an activation energy (E_{det} + 3 epsilon)/4 if E_{kr} epsilon, where epsilon is the kink energy and E_{det} is the barrier for detachment of a step adatom from a kink. We point out that the assumption of an Einstein relation for step edge diffusion has lead to an incorrect interpretation of step fluctuation experiments, and explain why such a relation does not hold. The theory is applied to experimental results on Pt(111) and Cu(100).Comment: 11 pages, 4 eps figure

Interface Electronic Structure in a Metal/Ferroelectric Heterostructure under Applied Bias

The effective barrier height between an electrode and a ferroelectric (FE) depends on both macroscopic electrical properties and microscopic chemical and electronic structure. The behavior of a prototypical electrode/FE/electrode structure, Pt/BaTiO3/Nb-doped SrTiO3, under in-situ bias voltage is investigated using X-Ray Photoelectron Spectroscopy. The full band alignment is measured and is supported by transport measurements. Barrier heights depend on interface chemistry and on the FE polarization. A differential response of the core levels to applied bias as a function of the polarization state is observed, consistent with Callen charge variations near the interface.Comment: 9 pages, 8 figures. Submitted to Phys. Rev.

Time-resolved PhotoEmission Spectroscopy on a Metal/Ferroelectric Heterostructure

In thin film ferroelectric capacitor the chemical and electronic structure of the electrode/FE interface can play a crucial role in determining the kinetics of polarization switching. We investigate the electronic structure of a Pt/BaTiO3/SrTiO3:Nb capacitor using time-resolved photoemission spectroscopy. The chemical, electronic and depth sensitivity of core level photoemission is used to probe the transient response of different parts of the upper electrode/ferroelectric interface to voltage pulse induced polarization reversal. The linear response of the electronic structure agrees quantitatively with a simple RC circuit model. The non-linear response due to the polarization switch is demonstrated by the time-resolved response of the characteristic core levels of the electrode and the ferroelectric. Adjustment of the RC circuit model allows a first estimation of the Pt/BTO interface capacitance. The experiment shows the interface capacitance is at least 100 times higher than the bulk capacitance of the BTO film, in qualitative agreement with theoretical predictions from the literature.Comment: 7 pages, 10 figures. Submitted to Phys. Rev.

Magneto-ionic control of spin polarization in multiferroic tunnel junctions

Magnetic tunnel junctions (MTJs) with Hf0.5Zr0.5O2 barriers are reported to show both tunneling magnetoresistance effect (TMR) and tunneling electroresistance effect (TER), displaying four resistance states by magnetic and electric field switching. Here we show that, under electric field cycling of large enough magnitude, the TER can reach values as large as 10^6%. Moreover, concomitant with this TER enhancement, the devices develop electrical control of spin polarization, with sign reversal of the TMR effect. Currently, this intermediate state exists for a limited number of cycles and understanding the origin of these phenomena is key to improve its stability. The experiments presented here point to the magneto-ionic effect as the origin of the large TER and strong magneto-electric coupling, showing that ferroelectric polarization switching of the tunnel barrier is not the main contribution

Active Based-Metasurfaces for Mid-Infrared Optoelectronics Devices

We develop low-temperature (450°C) deposition conditions for vanadium di-oxide phase change material. It permits implementation of tunable mid-infrared meta-surfaces on quantum cascade lasers based heterostructures

Spin electronic magnetic sensor based on functional oxides for medical imaging

8th Spintronics Symposium , AUG 09-13, 2015 , San Diego, CAInternational audienceTo detect magnetic signals coming from the body, in particular those produced by the electrical activity of the heart or of the brain, the development of ultrasensitive sensors is required. In this regard, magnetoresistive sensors, stemming from spin electronics, are very promising devices. For example, tunnel magnetoresistance (TMR) junctions based on MgO tunnel barrier have a high sensitivity. Nevertheless, TMR also often have high level of noise. Full spin polarized materials like manganite La0.67Sr0.33MnO3 (LSMO) are attractive alternative candidates to develop such sensors because LSMO exhibits a very low 1/f noise when grown on single crystals, and a TMR response has been observed with values up to 2000%. This kind of tunnel junctions, when combined with a high Tc superconductor loop, opens up possibilities to develop full oxide structures working at liquid nitrogen temperature and suitable for medical imaging. In this work, we investigated on LSMO-based tunnel junctions the parameters controlling the overall system performances, including not only the TMR ratio, but also the pinning of the reference layer and the noise floor. We especially focused on studying the effects of the quality of the barrier, the interface and the electrode, by playing with materials and growth condition