19.2% Efficient InP Heterojunction Solar Cell with Electron-Selective TiO2 Contact.

We demonstrate an InP heterojunction solar cell employing an ultrathin layer (∼10 nm) of amorphous TiO2 deposited at 120 °C by atomic layer deposition as the transparent electron-selective contact. The TiO2 film selectively extracts minority electrons from the conduction band of p-type InP while blocking the majority holes due to the large valence band offset, enabling a high maximum open-circuit voltage of 785 mV. A hydrogen plasma treatment of the InP surface drastically improves the long-wavelength response of the device, resulting in a high short-circuit current density of 30.5 mA/cm2 and a high power conversion efficiency of 19.2%

Shape-controlled single-crystal growth of InP at low temperatures down to 220 °C.

III-V compound semiconductors are widely used for electronic and optoelectronic applications. However, interfacing III-Vs with other materials has been fundamentally limited by the high growth temperatures and lattice-match requirements of traditional deposition processes. Recently, we developed the templated liquid-phase (TLP) crystal growth method for enabling direct growth of shape-controlled single-crystal III-Vs on amorphous substrates. Although in theory, the lowest temperature for TLP growth is that of the melting point of the group III metal (e.g., 156.6 °C for indium), previous experiments required a minimum growth temperature of 500 °C, thus being incompatible with many application-specific substrates. Here, we demonstrate low-temperature TLP (LT-TLP) growth of single-crystalline InP patterns at substrate temperatures down to 220 °C by first activating the precursor, thus enabling the direct growth of InP even on low thermal budget substrates such as plastics and indium-tin-oxide (ITO)-coated glass. Importantly, the material exhibits high electron mobilities and good optoelectronic properties as demonstrated by the fabrication of high-performance transistors and light-emitting devices. Furthermore, this work may enable integration of III-Vs with silicon complementary metal-oxide-semiconductor (CMOS) processing for monolithic 3D integrated circuits and/or back-end electronics

Room temperature multiplexed gas sensing using chemical-sensitive 3.5-nm-thin silicon transistors

There is great interest in developing a low-power gas sensing technology that can sensitively and selectively quantify the chemical composition of a target atmosphere. Nanomaterials have emerged as extremely promising candidates for this technology due to their inherent low-dimensional nature and high surface-to-volume ratio. Among these, nanoscale silicon is of great interest because pristine silicon is largely inert on its own in the context of gas sensing, unless functionalized with an appropriate gas-sensitive material. We report a chemical-sensitive field-effect transistor (CS-FET) platform based on 3.5-nm-thin silicon channel transistors. Using industry compatible processing techniques, the conventional electrically active gate stack is replaced by an ultrathin chemical-sensitive layer that is electrically conconducting and coupled to the 3.5-nm-thin silicon channel. We demonstrate a low-power, sensitive, and selective multiplexed gas sensing technology using this platform by detecting H_2S, H_2, and NO_2 at room temperature for environment, health, and safety in the oil and gas industry, offering significant advantages over existing technology. Moreover, the system described here can be readily integrated with mobile electronics for distributed sensor networks in environmental pollution mapping and personal air-quality monitors

General Thermal Texturization Process of MoS_2 for Efficient Electrocatalytic Hydrogen Evolution Reaction

Molybdenum disulfide (MoS_2) has been widely examined as a catalyst containing no precious metals for the hydrogen evolution reaction (HER); however, these examinations have utilized synthesized MoS_2 because the pristine MoS_2 mineral is known to be a poor catalyst. The fundamental challenge with pristine MoS_2 is the inert HER activity of the predominant (0001) basal surface plane. In order to achieve high HER performance with pristine MoS_2, it is essential to activate the basal plane. Here, we report a general thermal process in which the basal plane is texturized to increase the density of HER-active edge sites. This texturization is achieved through a simple thermal annealing procedure in a hydrogen environment, removing sulfur from the MoS_2 surface to form edge sites. As a result, the process generates high HER catalytic performance in pristine MoS_2 across various morphologies such as the bulk mineral, films composed of micron-scale flakes, and even films of a commercially available spray of nanoflake MoS_2. The lowest overpotential (η) observed for these samples was η = 170 mV to obtain 10 mA/cm_2 of HER current density

General Thermal Texturization Process of MoS_2 for Efficient Electrocatalytic Hydrogen Evolution Reaction

Molybdenum disulfide (MoS_2) has been widely examined as a catalyst containing no precious metals for the hydrogen evolution reaction (HER); however, these examinations have utilized synthesized MoS_2 because the pristine MoS_2 mineral is known to be a poor catalyst. The fundamental challenge with pristine MoS_2 is the inert HER activity of the predominant (0001) basal surface plane. In order to achieve high HER performance with pristine MoS_2, it is essential to activate the basal plane. Here, we report a general thermal process in which the basal plane is texturized to increase the density of HER-active edge sites. This texturization is achieved through a simple thermal annealing procedure in a hydrogen environment, removing sulfur from the MoS_2 surface to form edge sites. As a result, the process generates high HER catalytic performance in pristine MoS_2 across various morphologies such as the bulk mineral, films composed of micron-scale flakes, and even films of a commercially available spray of nanoflake MoS_2. The lowest overpotential (η) observed for these samples was η = 170 mV to obtain 10 mA/cm_2 of HER current density

Tantalum oxide electron-selective heterocontacts for silicon photovoltaics and photoelectrochemical water reduction

Crystalline silicon (c-Si) solar cells have been dominating the photovoltaic (PV) market for decades, and c-Si based photoelectrochemical (PEC) cells are regarded as one of the most promising routes for water splitting and renewable production of hydrogen. In this work, we demonstrate a nanoscale tantalum oxide (TaOx, ∼6 nm) as an electron-selective heterocontact, simultaneously providing high-quality passivation to the silicon surface and effective transport of electrons to either an external circuit or a water-splitting catalyst. The PV application of TaOx is demonstrated by a proof-of-concept device having a conversion efficiency of 19.1%. In addition, the PEC application is demonstrated by a photon-to-current efficiency (with additional applied bias) of 7.7%. These results represent a 2% and 3.8% absolute enhancement over control devices without a TaOx interlayer, respectively. The methods presented in this Letter are not limited to c-Si based devices and can be viewed as a more general approach to the interface engineering of optoelectronic and photoelectrochemical applications