438 research outputs found

    Pancreatic cancer mortality in Serbia from 1991-2010-a joinpoint analysis

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    Aim To analyze the trends of pancreatic cancer mortality in Serbia. Methods The study covered the population of Serbia in the period 1991 to 2010. Mortality trends were assessed by the joinpoint regression analysis by age and sex. Results Age-standardized mortality rates ranged from 5.93 to 8.57 per 100 000 in men and from 3.51 to 5.79 per 100 000 in women. Pancreatic cancer mortality in all age groups was higher among men than among women. It was continuously increasing since 1991 by 1.6% (95% confidence interval [CI] 1.1 to 2.0) yearly in men and by 2.2% (95% CI 1.7 to 2.7) yearly in women. Changes in mortality were not significant in younger age groups for both sexes. In older men (≥55 years), mortality was increasing, although in age groups 70-74 and 80-84 the increase was not significant. In 65-69 years old men, the increase in mortality was significant only in the period 2004 to 2010. In≥50 years old women, mortality significantly increased from 1991 onward. In 75-79 years old women, a non-significant decrease in the period 1991 to 2000 was followed by a significant increase from 2000 to 2010. Conclusion Serbia is one of the countries with the highest pancreatic cancer mortality in the world, with increasing mortality trend in both sexes and in most age groups

    Purification of two hexosaminidases from human kidney

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    Properties of New York/New Jersey Harbor Sediments

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    Sediments found in waterways around the world may contain toxic compounds of anthropogeilic origin that can harm the environment and human health. As a result, it is often necessary to remove them and find disposal methods that are environmentally and economically acceptable. Here, we report on results obtained in an experimental program to characterize the nature of the sediment contamination. The objective was to gain a better understanding of the properties of the sediments to develop better methods for understanding the fate and transport of the contaminants and for improving methods for their removal from the sediments. Our investigations made use of x-ray facilities at the Brookhaven National Synchrotron Light Source (NSLS) and the European Synchrotron Radiation Facility (ESRF) at Grenoble, France. The experiments included: measurements of the microstructure of the sediments using computed microtomography, x-ray absorption, and fluorescence microscopy with resolutions as low as 0.2 micrometers to obtain information on the relationships of organic and mineral components of the sediments and on the distribution of contaminants on the surfaces of the sediment grains, investigation of functional groups of chemical compounds using x-ray absorption near-edge spectroscopy (XANES) and Fourier Transform Infrared Spectroscopy (FTIR). Scanning electron microscopy (SEM) and electron probe measurements were made to ascertain the morphology of the sediment surfaces and the distribution of metals on individual sediment grains

    A Comprehensive Overview of the Temperature-Dependent Modeling of the High-Power GaN HEMT Technology Using mm-Wave Scattering Parameter Measurements (Invited Paper)

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    The gallium-nitride (GaN) high electron-mobility transistor (HEMT) technology has emerged as an attractive candidate for high-frequency, high-power, and high-temperature applications due to the unique physical characteristics of the GaN material. Over the years, much effort has been spent on measurement-based modeling since accurate models are essential for allowing the use of this advanced transistor technology at its best. The present analysis is focused on the modeling of the scattering (S-) parameter measurements for a 0.25 μm GaN HEMT on silicon carbide (SiC) substrate at extreme operating conditions: a large gate width (i.e., the transistor is based on an interdigitated layout consisting of ten fingers, each with a length of 150 μm, resulting in a total gate periphery of 1.5 mm), a high ambient temperature (i.e., from 35 °C up to 200 °C with a step of 55 °C), a high dissipated power (i.e., 5.1 W at 35 °C), and a high frequency in the millimeter-wave range (i.e., from 200 MHz up to 65 GHz with a step of 200 MHz). Three different modeling approaches are investigated: the equivalent-circuit model, artificial neural networks (ANNs), and gated recurrent units (GRUs). As is shown, each modeling approach has its pros and cons that need to be considered, depending on the target performance and their specifications. This implies that an appropriate selection of the transistor modeling approach should be based on discerning and prioritizing the key features that are indeed the most important for a given application

    Domain wall QCD with physical quark masses

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    We present results for several light hadronic quantities (fπf_\pi, fKf_K, BKB_K, mudm_{ud}, msm_s, t01/2t_0^{1/2}, w0w_0) obtained from simulations of 2+1 flavor domain wall lattice QCD with large physical volumes and nearly-physical pion masses at two lattice spacings. We perform a short, O(3)%, extrapolation in pion mass to the physical values by combining our new data in a simultaneous chiral/continuum `global fit' with a number of other ensembles with heavier pion masses. We use the physical values of mπm_\pi, mKm_K and mΩm_\Omega to determine the two quark masses and the scale - all other quantities are outputs from our simulations. We obtain results with sub-percent statistical errors and negligible chiral and finite-volume systematics for these light hadronic quantities, including: fπf_\pi = 130.2(9) MeV; fKf_K = 155.5(8) MeV; the average up/down quark mass and strange quark mass in the MSˉ\bar {\rm MS} scheme at 3 GeV, 2.997(49) and 81.64(1.17) MeV respectively; and the neutral kaon mixing parameter, BKB_K, in the RGI scheme, 0.750(15) and the MSˉ\bar{\rm MS} scheme at 3 GeV, 0.530(11).Comment: 131 pages, 30 figures. Updated to match published versio
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