In Situ IR Spectroscopy Studies of Atomic Layer-Deposited SnO₂ on Formamidinium-Based Lead Halide Perovskite

Perovskite photovoltaics has achieved conversion efficiencies of 26.0% by optimizing the optoelectronic properties of the absorber and its interfaces with charge transport layers (CTLs). However, commonly adopted organic CTLs can lead to parasitic absorption and device instability. Therefore, metal oxides like atomic layer-deposited (ALD) SnO2 in combination with fullerene-based electron transport layers have been introduced to enhance mechanical and thermal stability. Instead, when ALD SnO2 is directly processed on the absorber, i.e., without the fullerene layer, chemical modifications of the inorganic fraction of the perovskite occur, compromising the device performance. This study focuses on the organic fraction, particularly the formamidinium cation (FA+), in a CsFAPb(I,Br)3 perovskite. By employing in situ infrared spectroscopy, we investigate the impact of ALD processing on the perovskite, such as vacuum level, temperature, and exposure to half and full ALD cycles using tetrakis(dimethylamido)-Sn(IV) (TDMA-Sn) and H2O. We observe that exposing the absorber to vacuum conditions or water half-cycles has a negligible effect on the chemistry of the perovskite. However, prolonged exposure at 100 °C for 90 min results in a loss of 0.7% of the total formamidinium-related vibrational features compared to the pristine perovskite. Supported by density functional theory calculations, we speculate that FA+ deprotonates and that formamidine desorbs from the perovskite surface. Furthermore, the interaction between TDMA-Sn and FA+ induces more decomposition of the perovskite surface compared to vacuum, temperature, or H2O exposure. During the exposure to 10 ALD half-cycles of TDMA-Sn, 4% of the total FA+-related infrared features are lost compared to the pristine perovskite. Additionally, IR spectroscopy suggests the formation and trapping of sym-triazine, i.e., a decomposition product of FA+. These studies enable to decouple the effects occurring during direct ALD processing on the perovskite and highlight the crucial role of the Sn precursor in affecting the perovskite surface chemistry and compromising the device performance

Atomic insights into the oxygen incorporation in atomic layer deposited conductive nitrides and its mitigation by energetic ions

Oxygen is often detected as impurity in metal and metal nitride films prepared by atomic layer deposition (ALD) and its presence has profound and adverse effects on the material properties. In this work, we present the case study of HfNx films prepared by plasma-assisted ALD by alternating exposures of CpHf(NMe2)3 and H2 plasma. First, we identify the primary source of O contamination in the film. Specifically, we find that the extent of O incorporation in HfNx films is determined by the flux of background H2O/O2 residual gases reaching the HfNx surface during the ALD process and leads to the formation of Hf–O bonds. Then, we report on the decrease in the concentration of Hf–O bonds in the film upon application of an external radiofrequency (rf) substrate bias during the H2 plasma step. The experimental work is accompanied by first principles calculations to gain insights into the O incorporation and its mitigation upon the impingement of energetic ions on the surface. Specifically, we find that the dissociative binding of H2O on a bare HfN surface is highly favored, resulting in surface Hf–OH groups and concomitant increase in the oxidation state of Hf. We also show that energetic cations (H+, H2+ and H3+) lead to the dissociation of surface Hf–OH bonds, H2O formation, and its subsequent desorption from the surface. The latter is followed by reduction of the Hf oxidation state, presumably by H˙ radicals. The atomic-level understanding obtained in this work on O incorporation and its abstraction are expected to be crucial to prevent O impurities in the HfNx films and contribute to the fabrication of other technologically relevant low resistivity ALD-grown transition metal nitride films

Area-selective atomic layer deposition of In2O3 : H using a μ-plasma printer for local area activation

Researchers present a novel method for area-selective atomic layer deposition (AS-ALD) large-area electronics. It is a direct-write ALD process of In 2O 3:H, a highly promising and relevant transparent conductive oxide (TCO) material which makes use of printing technology for surface activation. first the surface of H-terminated silicon materials is locally activated by a μ-plasma printer in air or O 2, and In 2O 3:H is deposited selectively on the activated areas. The selectivity stems from the fact that ALD In 2O 3:H leads to very long nucleation delays on H-terminated silicon materials

Crystalline silicon solar cells with thin poly-SiO_x carrier-selective passivating contacts for perovskite/c-Si tandem applications

Single junction crystalline silicon (c-Si) solar cells are reaching their practical efficiency limit whereas perovskite/c-Si tandem solar cells have achieved efficiencies above the theoretical limit of single junction c-Si solar cells. Next to low-thermal budget silicon heterojunction architecture, high-thermal budget carrier-selective passivating contacts (CSPCs) based on polycrystalline-SiOx (poly-SiOx) also constitute a promising architecture for high efficiency perovskite/c-Si tandem solar cells. In this work, we present the development of c-Si bottom cells based on high temperature poly-SiOx CSPCs and demonstrate novel high efficiency four-terminal (4T) and two-terminal (2T) perovskite/c-Si tandem solar cells. First, we tuned the ultra-thin, thermally grown SiOx. Then we optimized the passivation properties of p-type and n-type doped poly-SiOx CSPCs. Here, we have optimized the p-type doped poly-SiOx CSPC on textured interfaces via a two-step annealing process. Finally, we integrated such bottom solar cells in both 4T and 2T tandems, achieving 28.1% and 23.2% conversion efficiency, respectively.</p

Proton Radiation Hardness of Perovskite Tandem Photovoltaics.

Monolithic [Cs0.05(MA0. 17FA0. 83)0.95]Pb(I0.83Br0.17)3/Cu(In,Ga)Se2 (perovskite/CIGS) tandem solar cells promise high performance and can be processed on flexible substrates, enabling cost-efficient and ultra-lightweight space photovoltaics with power-to-weight and power-to-cost ratios surpassing those of state-of-the-art III-V semiconductor-based multijunctions. However, to become a viable space technology, the full tandem stack must withstand the harsh radiation environments in space. Here, we design tailored operando and ex situ measurements to show that perovskite/CIGS cells retain over 85% of their initial efficiency even after 68 MeV proton irradiation at a dose of 2 × 1012 p+/cm2. We use photoluminescence microscopy to show that the local quasi-Fermi-level splitting of the perovskite top cell is unaffected. We identify that the efficiency losses arise primarily from increased recombination in the CIGS bottom cell and the nickel-oxide-based recombination contact. These results are corroborated by measurements of monolithic perovskite/silicon-heterojunction cells, which severely degrade to 1% of their initial efficiency due to radiation-induced recombination centers in silicon.F.L. acknowledges financial support from the Alexander von Humboldt Foundation via the Feodor Lynen program and thanks Prof. Sir R. Friend for supporting his Fellowship at the Cavendish Laboratory. This work was supported by the European Research Council (ERC) under the European Union’s Horizon 2020 research and innovation programme (HYPERION, grant agreement number 756962). M.J, A.A.A., E.K., and S.A. acknowledge financial support from the German Federal Ministry of Education and Research (BMBF) via program “Materialforschung für die Energiewende” (grant no. 03SF0540), by the German Federal Ministry for Economic Affairs and Energy (BMWi) through the ‘PersiST’ project (Grant No. 0324037C). T.B. C.A.K. and R.S. acknowledge funding by BMWi through the speedCIGS (grant no. 0324095E) and EFFCIS project (grant no. 0324076D). D.K. and M.C. acknowledge financial support from the Dutch Ministry of Economic Affairs, via The Top-consortia Knowledge and Innovation (TKI) Program ‘‘Photovoltaic modules based on a p-i-n stack, manufactured on a roll-to-roll line featuring high efficiency, stability and strong market perspective’’ (PVPRESS) (TEUE118010) and “Bridging the voltage gap” (BRIGHT) (1721101). K. F. acknowledges the George and Lilian Schiff Fund, the Engineering and Physical Sciences Research Council (EPSRC), the Winton Sustainability Fellowship, and the Cambridge Trust for funding. S.D.S. acknowledges the Royal Society and Tata Group (UF150033). The authors acknowledge the EPSRC for funding (EP/R023980/1). This project has received funding from the European Union’s Horizon 2020 research and innovation programme under the Marie Skłodowska-Curie grant agreement No. 841265. A.R.B. acknowledges funding from a Winton Studentship, Oppenheimer Studentship, and funding from the Engineering and Physical Sciences Research Council (EPSRC) Doctoral Training Centre in Photovoltaics (CDT-PV). K.G. acknowledges the Polish Ministry of Science and Higher Education within the Mobilnosc Plus program (Grant No. 1603/MOB/V/2017/0)

21.6%-efficient monolithic perovskite/Cu(In,Ga)Se2 tandem solar cells with thin conformal hole transport layers for integration on rough bottom cell surfaces

Perovskite-based tandem solar cells can increase the power conversion efficiency (PCE) of conventional single-junction photovoltaic devices. Here, we present monolithic perovskite/CIGSe tandem solar cells with a perovskite top cell fabricated directly on an as-grown, rough CIGSe bottom cell. To prevent potential shunting due to the rough CIGSe surface, a thin NiOx layer is conformally deposited via atomic layer deposition on the front contact of the CIGSe bottom cell. The performance is further improved by an additional layer of the polymer PTAA at the NiOx/perovskite interface. This hole transport bilayer enables a 21.6% stabilized PCE of the tandem device at ∼0.8 cm2 active area. We use TEM/EDX measurements to investigate the deposition uniformity and conformality of the NiOx and PTAA layers. By absolute photoluminescence measurements, the contribution of the individual subcells to the tandem VOC is determined, revealing that further fine-tuning of the recombination layers might improve the tandem VOC. Finally, on the basis of the obtained results, we give guidelines to improve monolithic perovskite/CIGSe tandems toward predicted PCE estimates above 30%.BMBF, 03SF0540, Nachwuchsgruppe MeSa-Zuma: Entwicklung von spektral optimierten, hocheffizienten und langzeitstabilen Perowskit/Silizium Tandem SolarzellenBMWi, 0324095D, Verbundvorhaben: speedCIGS - Rechnerunterstützte Optimierung des CIGS-Depositionsprozesses in der industriellen Umsetzung; Teilvorhaben: Alkalibehandlung der CIGS Absorberoberfläche und monolithisch integrierte Tandem Zelle (p-TCM)BMWi, 0324076D, Verbundvorhaben: EFFCIS - Effizienzoptimierung von CIS-basierten Dünnschichtsolarzellen und -modulen; Teilvorhaben: Elektronenstrukturrechnungen zum Einfluss von Puffermaterialien auf die Eigenschaften des Cu(ln,Ga)(S,Se)2 Absorber

On the role of micro-porosity in affecting the environmental stability of atomic/molecular layer deposited (ZnO) : A (Zn-O-C 6 H 4 -O) b films

Atomic/molecular layer deposited (ALD/MLD) inorganic-organic thin films form a novel class of materials with tunable properties. In selected cases, hybrid materials are reported to show environmental instability, specifically towards moisture. In this article, we focus on zinc oxide/zincone multi-layers with the theoretical formula of (ZnO) a (Zn-O-C 6 H 4 -O) b . We show by means of ellipsometric porosimetry that micro-porosity in the range of 0.42 and 2 nm in the pristine zincone layer is responsible for its environmental degradation. During degradation, it is found that a relative micro-porosity content of 1.2 ± 0.1 vol% in the pristine zincone films evolves into micro-mesoporosity with a relative content of 39 ± 1 vol%. We also show that the micro-porosity in the zincone layer can be gradually suppressed when few cycles (a = 1-10) of ZnO are introduced. The resulting (ZnO) a (Zn-O-C 6 H 4 -O) b = 1 periodic multilayer is an environmentally stable film with a = 10. It is found that the suppressed micro-porosity is due to the development of continuous ZnO layers with a ≥ 10