Unlocking Spectral Versatility from Broadly-Tunable Quantum-Dot Lasers

Wavelength−tunable semiconductor quantum−dot lasers have achieved impressive performance in terms of high−power, broad tunability, low threshold current, as well as broadly tunable generation of ultrashort pulses. InAs/GaAs quantum−dot−based lasers in particular have demonstrated significant versatility and promise for a range of applications in many areas such as biological imaging, optical fiber communications, spectroscopy, THz radiation generation and frequency doubling into the visible region. In this review, we cover the progress made towards the development of broadly−tunable quantum−dot edge−emitting lasers, particularly in the spectral region between 1.0–1.3 µm. This review discusses the strategies developed towards achieving lower threshold current, extending the tunability range and scaling the output power, covering achievements in both continuous wave and mode−locked InAs/GaAs quantum−dot lasers. We also highlight a number of applications which have benefitted from these advances, as well as emerging new directions for further development of broadly−tunable quantum−dot lasers

Double-pass amplification of picosecond pulses with a tapered semiconductor amplifier

Double-pass amplification of picosecond pulses is demonstrated and compared with single-pass amplification. This was achieved using a two-section tapered semiconductor optical amplifier with a chirped quantum-dot active region and a mode-locked laser diode as a seed. Across the range of biasing conditions common to both configurations, an enhancement in signal gain of up to 7 dB and output power by a factor of 4.1 was seen in the double-pass amplifier, compared to the single-pass. Only marginal increases in pulse duration were observed in the double-pass regime compared to the single-pass amplifier, meaning that enhancements in output power were well translated into peak power. Furthermore, the two-section contact layout of the SOA allowed the pulse duration to be optimised for a given fixed output power, giving additional flexibility to the amplifier. These results demonstrate the suitability of this simple and versatile technique, which could become the new standard in amplification of ultrashort pulses

Wide and tunable spectral asymmetry between narrow and wide facet outputs in a tapered quantum-dot superluminescent diode

A wide spectral asymmetry between the front and rear facets of a tapered chirped quantum dot multi-section superluminescent diode is reported. The spectral asymmetry between the two facet outputs was found to be tunable and highly dependent on the bias asymmetry between the two contact sections, with a spectral mismatch of up to 14 nm. Numerical simulations confirmed a relationship between this spectral asymmetry and the non-uniform filling of the quantum dots’ confined states when different current densities are applied to the device electrodes. The results from this investigation open up an additional degree of freedom for multi-section superluminescent diodes, which could pave the way for optical bandwidth engineering via multiplexing the spectral output from both facets, using only a single device

InP quantum dot monolithic mode-locked lasers for ultrashort pulse generation at 735 nm

Monolithic InP/GaInP quantum dot passively mode-locked lasers are realised for the first time, emitting in the 730 nm waveband. Devices with total cavity length between 2 mm and 3.5 mm, with uncoated cleaved facets, and saturable absorber (SA) sections representing approximately 20% of the total cavity length have been found to Q-switch, mode-lock or both, depending on operating regime. The influence of bias conditions on the characteristics of lasers with a 3 mm cavity length have been explored, resulting in generation of pulses at 734.7 nm with pulse repetition rates of 12.55 GHz and pulse durations down to ≈6 ps

Ultrashort-pulse generation from quantum-dot semiconductor diode lasers

In this thesis, novel regimes of mode locking in quantum dot semiconductor laser diodes have been investigated by exploiting the unique features offered by quantum dots. Using an unconventional approach, the role of excited state transitions in the quantum dots was exploited as an additional degree of freedom for the mode locking of experimental quantum dot lasers. For the first time, passive mode locking via ground (1260nm) or excited state (1190nm) was demonstrated in a quantum dot laser. Picosecond pulses were generated at a repetition rate of 21GHz and 20.5GHz, for the ground and excited states respectively, with average powers in excess of 25mW. Switching between these two states in the mode-locking regime was achieved by changing the electrical biasing conditions, thus providing full control of the operating spectral band. A novel regime for mode locking in a quantum-dot laser was also investigated, where the simultaneous presence of cw emission in the excited-state band at high injection current levels, dramatically reduced the duration of the pulses generated via the ground state, whilst simultaneously boosting its peak power. This represents a radically different trend from the one typically observed in mode-locked lasers. From this investigation, it was concluded that the role of the excited state can not be neglected in the generation of ultrashort pulses from quantum-dot lasers. Stable passive mode locking of a quantum-dot laser over an extended temperature range (from 20ºC to 80ºC) was also demonstrated at relatively high output average powers. It was observed that the pulse duration and the spectral width decreased significantly as the temperature was increased up to 70ºC. The process of carrier escape in the absorber was identified as the main contributing factor that led to a decrease in the absorber recovery time as a function of increasing temperature which facilitated a decrease in the pulse durations. These results are shown to open the way for the ultimate deployment of ultra stable and uncooled mode-locked semiconductor diode lasers

OSBERT: Towards Megahertz Scan Rates Using Optical Sampling By Electronic Repetition-Rate Tuning

We present OSBERT-Optical Sampling By Electronic Repetition-Rate Tuning. OSBERT is a novel optical sampling technique whose potential is shown to approach highly competitive megahertz scan rates, using a single mode-locked two-section laser diode.</p