About orientation dependence of physico-chemical properties of HPHT diamond surfaces thermally treated in H2 and D2 environments

Recently [1] we reported on some preliminary results on different physico-chemical properties of diamond (100), (110) and (111) surfaces hydrogenated by using molecular hydrogen only. The main conclusions were that thermal hydrogenation was as efficient as plasma one and that the creation of the conducting surface channel was activated by a larger energy on the (100) surface with respect to the other two. The reason, at least in the case of the comparison between (100) and (111) surfaces, could be either attributed to the presence of a carbon – oxygen double bond before hydrogenation in the former case [2] or to a better coverage by carbon – hydrogen bonds in the latter one. In the present work, further results on surface conductivity after hydrogenation steps carried out at different temperatures are described and discussed, in order to discriminate between purely thermal and kinetic effects. Moreover, other results are reported on diamond powders (0.25 micrometer mean size) in order to draw some qualitative and quantitative conclusions about hydrogen presence and behavior at the diamond surfaces. In order to better clarify the results, a large part of chemical measurements were performed after deuteration steps carried out using the same conditions as thermal hydrogenation

The (100), (111) and (110) surfaces of diamond: an ab initio B3LYP study

We present an accurate ab initio study of the structure and surface energy of the low-index (100),(111) and (110) diamond faces, by using the hybrid Hartree-Fock/Density Functional B3LYPHamiltonian and a localized all-electron Gaussian-type basis set. A 2D periodic slab model has been adopted, for which convergence on both structural and energetic parameters has been thoroughly investigated. For all the three surfaces, possible relaxations and reconstructions have been considered; a detailed geometrical characterization is provided for the most stable structure of each orientation. Surface energy is discussed for all the investigated faces

Numerical results

Abstract

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Abstract

Neutron spectrometry at various altitudes in atmosphere by passive detector technique

A new experimental system, constituted by passive detectors, has been developed to measure neutron spectra at various altitudes in the atmosphere. The knowledge of the neutron spectrum is required to evaluate with a good accuracy the neutron contribution to the total dose, due to the cosmic ray exposure, in fact the flux-to-dose conversion factors strongly depend on neutron energy. Moreover, in many dosimetric applications, as the dose evaluation to the aircrew in service on intercontinental flights, the passive system is not only the most convenient but it is often the unique technique. The experimental system is constituted by the passive bubble detector BD100R, polycarbonate foils, polycarbonate bottles, sensitive in low and intermediate neutron energy range, and the bismuth stack, sensitive in the high energy range. Experimental data were obtained in high mountain measurements at Matterhorn (3600 m altitude, 46 N ) and Chacaltaya (5230 m altitude, 16 S), during flights at 12000 m and on board of stratospheric balloons at 38000 m. All the spectra obtained show, as expected, the evaporation peak around 1 MeV and the second direct bump around 100 MeV; the results, different in the neutron flux intensity, confirm the satisfactory sensitivity of this experimental technique

Angle resolved IBIC analysis of 4H-SiC Schottky diodes

We present a new experimental procedure based on the ion beam induced charge collection (IBIC) to characterise semiconductor detectors and devices. It consists in measuring the charge collection efficiency (q) as a function of the angle of incidence (eta) of a strongly penetrating MeV ion beam focussed onto a partially depleted semiconductor detector. The unidimensional model based on the drift-diffusion model derived from the Shockley-Ramo-Gunn's theorem gives the theoretical background to fit the eta(alpha) curve and to estimate both the extension of the depletion layer, the dead layer thickness and the minority carrier diffusion length. To illustrate the analytical capability of this technique, a 2 MeV proton beam was focussed at different incident angles onto a 4H-SiC Schottky diode; the experimental results and the theoretical approach are presented and discussed. (c) 2006 Published by Elsevier B.V

Photocurrent study of beta-ray priming in CVD diamond

Priming by X-rays or by beta-rays is generally needed in order to qualify CVD diamond for nuclear detection or for dosimetry. The priming effect is usually attributed in filling the hole traps, which are responsible for the charge collection efficiency of the detector. Emptying the filled traps can be easily detected by Thermoluminescence (TL), which is considered to be a measure of the absorbed dose. In this work, we prove that below-gap photocurrent (BGPC) can also be used in the same way and it is dominated by the optical detrapping of holes from the same centers. Time dependence of this beta-rays induced persistent photocurrent (PPC), which in fact, depends only on the total number of photons impinging onto the sample. In fact, at long times or for large number of photons, the photocurrent approaches to the same limit of PC for a null dose. The hole trapping centers distribution seems to extend from 1.25 to 2.5 eV valence band

Ion and X-ray micro-beam induced charge collection and their applications in CVD diamond detector characterisation

We have used a micrometer size X-ray beam generated from a synchrotron light source at the European Synchrotron Radiation Facility (ESRF) in Grenoble and a 2 MeV proton micro-beam at the Italian National Laboratory (LNL) of Legnaro to image the electronic transport properties of a CVD diamond detector developed within the CERN RD42 collaboration. The focused X-rays or protons are scanned over the device surface, and the induced current or charge pulse is measured and plotted on two dimensional maps. Due to the polycrystalline nature of the material, the maps are not homogeneous and both the techniques show structures ascribable to diamond grains. It was found that the uniformity of the maps depends on the lateral scale (binning) and on the analytical depth of the micro-probes

Micro-IL and micro-PIXE studies of rich diamond meteorites at Legnaro nuclear microprobe

Abstract A combination of micro-ionoluminescence (micro-IL) and micro-PIXE was used to characterize diamond grains inside a type of meteorites known as ureilites. Ureilites are a group of achondrites unique in containing relatively large amounts of carbon occurring as diamond, graphite or lonsdaleite. A shock origin for ureilitic diamonds has been widely accepted though an exact knowledge of the conditions during high-pressure graphite conversion is not yet achieved. Micro-IL is a very powerful technique for material investigation and particularly for diamond analysis. Using this technique we were able to identify the occurrence of the diamond phase inside carbon meteoritic inclusions and to perform micro-PIXE analysis on single diamond grains. In fact, IL in low nitrogen content diamonds is dominated by A-band emission (centered at about 2.9 eV) and so, considering only IL monochromatic map at such a spectral band, it was possible to identify them. By making measurements directly on the meteorites, contamination during chemical extraction processes was avoided and it was possible to study not only the diamond phase, but also its distribution inside carbon inclusions

Lateral IBIC analysis of GaAs Schottky diodes

Abstract Charge collection efficiency (CCE) profiles of a semi-insulating (SI) gallium arsenide LEC (Liquid Encapsulated Czochralski) Schottky diode have been investigated by lateral Ion Beam Induced Charge collection (IBIC) technique. A focussed 2.4 MeV proton microbeam was scanned over the cleaved surface of a SI-GaAs diode and the charge collection efficiency was evaluated as a function of the ion beam position at different bias voltages. By fitting the CCE profiles with the equations derived by the Shockley–Ramo–Gunn's theorem, drift lengths of electrons and holes were obtained. Experimental results are consistent with previous OBIC (Optical Beam Induced Current) and SP (Surface Potential) measurements and confirm the model based on the formation of a Mott barrier due to the enhanced electron capture cross section in high field conditions