Efficient compact modelling of UTC-photodiode towards terahertz communication system design

Monolithic optoelectronic integrated circuits, OEICs are seen as key enabling technologies to minimal power loss criteria. Monolithic OEICs combine, on the same die, cutting-edge optical devices and high speed III-V electronics able to generate terahertz signal targeting beyond-5G networks. Computationally efficient compact models compatible with existing software tool and design flow are essential for timely and cost-effective OEIC achievement. The analog nature of photonic devices wholly justifies the use of methodologies alike the ones employed in electronic design automation, through implementation of accurate (and SPICE-compatible) compact models. This multidisciplinary work, describes an efficient compact model for Uni-Traveling Carrier photodiodes (UTC PD) which is a key component for OEICs. Its equations feature the UTC PD electronic transport and frequency response along with its photocurrent under applied optical power. It also dynamically takes into account the device junction temperature, accounting for the self-heating effect. Excellent agreement between model and measurements as well as model scalability (several geometries have been validated) has been achieved that marks the first demonstration of a multi-physics, computationally efficient and versatile compact model for UTC-PDs

Advances in Aging Compact Model for Hot Carrier Degradation in SiGe HBTs under Dynamic Operating conditions for reliability-aware circuit design

International audienc

First Uni-Traveling Carrier Photodiode Compact Model Enabling Future Terahertz Communication System Design

International audienceMonolithic optoelectronic integrated circuits (OEICs) are seen as key enabling technologies for future terahertz communications and upcoming beyond-5G networks. Co-design of monolithic OEICs requires computationally efficient compact models compatible with existing methodology/tool/design flow for timely and cost-effective realization of OEICs. This paper, inherently multidisciplinary, describes the first compact model for Uni-Traveling Carrier photodiodes (UTC PD), a key component for OEICs. Its equations capture the electronic transport and frequency response along with the photocurrent of the UTC PD under various applied optical power. It also dynamically computes the device junction temperature, accounting for self-heating effect. Excellent agreement between model and measurements as well as model scalability have been demonstrated

First Uni-Traveling Carrier Photodiode Compact Model Enabling Future Terahertz Communication System Design

International audienceMonolithic optoelectronic integrated circuits (OEICs) are seen as key enabling technologies for future terahertz communications and upcoming beyond-5G networks. Co-design of monolithic OEICs requires computationally efficient compact models compatible with existing methodology/tool/design flow for timely and cost-effective realization of OEICs. This paper, inherently multidisciplinary, describes the first compact model for Uni-Traveling Carrier photodiodes (UTC PD), a key component for OEICs. Its equations capture the electronic transport and frequency response along with the photocurrent of the UTC PD under various applied optical power. It also dynamically computes the device junction temperature, accounting for self-heating effect. Excellent agreement between model and measurements as well as model scalability have been demonstrated

LF Excess Noise of AlGaAs/GaAs and AlGaAs/InGaAs/GaAs HEMTs

The quality of AlGaAs/GaAs/buffer layer on GaAs HEMTs and of AlGaAs/InGaAs/GaAs HEMTs is studied on the basis of technological parameter influence: Al molefraction in the n-AlGaAs layer, type of the buffer layer (p- or n- doped GaAs or AlGaAs), in molefraction in pseudomorphic structures. From the LF drain noise behaviour versus gate and drain biases and temperature (90K to 300K), pseudomorphic devices are found to present lower drain current noise and less G-R contributions when compared to conventional HEMTs. This difference might result from a lower deep level concentration

Calibration of 1D doping profiles of SiGe HBTs

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Evaluation and Modeling of Voltage Stress-Induced Hot Carrier Effects in High-Speed SiGe HBTs

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Poster PHYSICS-BASED COMPACT MODEL FOR SCHOTTKY BARRIER CARBON NANOTUBE FET

For not highly doped or undoped source/drain regions, CNTFET Schottky barriers (SB) are formed between the metal contacts and the semiconducting carbon nanotube at source/drain (S/D). Under these conditions, the source and drain current is affected by tunnelling mechanisms through these barriers. By changing the gate voltage (figure 1), energy bands ar

Ultra compact High responsivity photodiodes for >100 Gbaud applications

International audienceWe demonstrated ultra-compact waveguide UTC photodiode with bandwidth efficiency product of 36 GHz on 50Ω load and above 55 GHz on 25Ω load, which allows to reach a bandwidth above 110 GHz with 0.6 A/W responsivity

Advances in Aging Compact Model for Hot Carrier Degradation in SiGe HBTs under Dynamic Operating conditions for reliability-aware circuit design

International audienc