Application of the detailed balance model to thermoradiative cells based on a p-type two-dimensional indium selenide semiconductor

Thermoradiative (TR) cells are energy conversion devices that convert low-temperature waste heat to electricity. TR cells work on the same principles as photovoltaics, but they produce a reverse bias voltage due to higher cell temperature than the environment temperature. Depending on the energy gap of the material, temperature difference would generate electrical energy by electron-hole pair recombination. In this work, we propose a two-dimensional (2D) InSe for applications in the TR cells. The electronic properties of 2D InSe are obtained by using first-principles calculations. Then, the calculated energy gap is used to estimate output power density and efficiency according to the Shockley-Queisser framework through a detailed balance model adapted with the TR cells. Using a heat source at T_c = 1000 K and the ambient temperature T_a = 300 K, an ideal TR cell of 2D InSe at the maximum power point can achieve output power density and efficiency up to 0.061 W/m2 and 4.41%, respectively, with an energy gap of 1.43 eV. However, sub-bandgap and non-radiative losses will degenerate the cell's performance significantly

Enhancement of spin mixing conductance by ss-dd orbital hybridization in heavy metals

In a magnetic multilayer, the spin transfer between localized magnetization dynamics and itinerant conduction spin arises from the interaction between a normal metal and an adjacent ferromagnetic layer. The spin-mixing conductance then governs the spin-transfer torques and spin pumping at the magnetic interface. Theoretical description of spin-mixing conductance at the magnetic interface often employs a single conduction-band model. However, there is orbital hybridization between conduction $s$ electron and localized $d$ electron of the heavy transition metal, in which the single conduction-band model is insufficient to describe the $s$-$d$ orbital hybridization. In this work, using the generalized Anderson model, we estimate the spin-mixing conductance that arises from the $s$-$d$ orbital hybridization. We find that the orbital hybridization increases the magnitude of the spin-mixing conductance.Comment: 7 pages, 4 figure

Unravelling strong electronic interlayer and intralayer correlations in a transition metal dichalcogenide

10.1038/s41467-021-27182-yNATURE COMMUNICATIONS12