Time resolved investigation of Cu In,Ga Se2 growth and Ga gradient formation during fast selenization of metallic precursors

Ga segregation at the backside of Cu In,Ga Se2 solar cell absorbers is a commonly observed phenomenon for a large variety of sequential fabrication processes. Here, we investigate the correlation between Se incorporation, phase formation and Ga segregation during fast selenisation of Cu In Ga precursor films in elemental selenium vapour. Se incorporation and phase formation are analysed by real time synchrotron based X ray diffraction and fluorescence analysis. Correlations between phase formation and depth distributions are gained by interrupting the process at several points and by subsequent ex situ cross sectional electron microscopy and Raman spectroscopy. The presented results reveal that the main share of Se incorporation takes place within a few seconds during formation of In Se at the top part of the film, accompanied by outdiffusion of In out of a ternary Cu In Ga phase. Surprisingly, CuInSe2 starts to form at the surface on top of the In Se layer, leading to an intermediate double graded Cu depth distribution. The remaining Ga rich metal phase at the back is finally selenised by indiffusion of Se. On the basis of a proposed growth model, we discuss possible strategies and limitations for the avoidance of Ga segregation during fast selenisation of metallic precursors. Solar cells made from samples selenised with a total annealing time of 6.5 amp; 8201;min reached conversion efficiencies of up to 14.2 total area, without anti reflective coating . The evolution of the Cu In,Ga Se2 diffraction signals reveals that the minimum process time for high quality Cu In,Ga Se2 absorbers is limited by cation ordering rather than Se incorporatio

CdS/Cu(In,Ga)S2 based solar cells with efficiencies reaching 12.9% prepared by a rapid thermal process

In this letter, we report externally confirmed total area efficiencies reaching up to 12.9% for CdS/Cu(In,Ga)S2 based solar cells. These are the highest externally confirmed efficiencies for such cells. The absorbers were prepared from sputtered metals subsequently sulfurized using rapid thermal processing in sulfur vapor. Structural, compositional, and electrical properties of one of these champion cells are presented. The correlation between the Ga distribution profile and solar cell properties is discussed

Grazing incidence x ray fluorescence analysis for non destructive determination of In and Ga depth profiles in Cu In,Ga Se2 absorber films

Development of highly efficient thin film solar cells involves band gap engineering by tuning their elemental composition with depth. Here we show that grazing incidence X ray fluorescence GIXRF analysis using monochromatic synchrotron radiation and well characterized instrumentation is suitable for a non destructive and reference free analysis of compositional depth profiles in thin films. Variation of the incidence angle provides quantitative access to the in depth distribution of the elements, which are retrieved from measured fluorescence intensities by modeling parameterized gradients and fitting calculated to measured fluorescence intensities. Our results show that double Ga gradients in Cu In1 x,Gax Se2 can be resolved by GIXR

Point defect segregation and its role in the detrimental nature of Frank partials in Cu(In,Ga)Se2 thin-film absorbers

The interaction of point defects with extrinsic Frank loops in the photovoltaic absorber material Cu(In,Ga)Se₂ was studied by aberration-corrected scanning transmission electron microscopy in combination with electron energy-loss spectroscopy and calculations based on density-functional theory. We find that Cu accumulation occurs outside of the dislocation cores bounding the stacking fault due to strain-induced preferential formation of Cu‾²In, which can be considered a harmful hole trap in Cu(In,Ga)Se₂. In the core region of the cation-containing α-core, Cu is found in excess. The calculations reveal that this is because Cu on In-sites is lowering the energy of this dislocation core. Within the Se-containing β-core, in contrast, only a small excess of Cu is observed, which is explained by the fact that Cu¡ⁿ and Cu¡ are the preferred defects inside this core, but their formation energies are positive. The decoration of both cores induces deep defect states, which enhance nonradiative recombination. Thus, the annihilation of Frank loops during the Cu(In,Ga)Se₂ growth is essential in order to obtain absorbers with high conversion efficiencies

Dependence of phase transitions on halide ratio in inorganic CsPb BrxI1 x 3 perovskite thin films obtained from high throughput experimentation

In this communication, we present the phase diagram of CsPb BrxI1 amp; 8722;x 3 0 amp; 8804; x amp; 8804; 1, 300 585 K obtained by high throughput in situ GIWAXS measurements of a combinatorial thin film library. We find that all compositions convert to the cubic perovskite phase at high temperature and that the presence of bromide in the films stabilizes the metastable perovskite phases upon cool down. In accordance with recent predictions from DFT calculations, the transition temperatures monotonically decrease with increasing bromide conten