Irradiation-dependent topology optimization of metallization grid patterns and variation of contact layer thickness used for latitude-based yield gain of thin-film solar modules

We show that the concept of topology optimization for metallization grid patterns of thin-film solar devices can be applied to monolithically integrated solar cells. Different irradiation intensities favor different topological grid designs as well as a different thickness of the transparent conductive oxide (TCO) layer. For standard laboratory efficiency determination, an irradiation power of 1000W/m$^{2}$ is generally applied. However, this power rarely occurs for real-world solar modules operating at mid-latitude locations. Therefore, contact layer thicknesses and also lateral grid patterns should be optimized for lower irradiation intensities. This results in material production savings for the grid and TCO layer of up to 50 % and simultaneously a significant gain in yield of over 1% for regions with a low annual mean irradiation

Impact of RbF-PDT on Cu(In,Ga)Se

Alkali-fluoride post-deposition treatments (PDTs) of Cu(In,Ga)Se2 (CIGS) absorbers have repeatedly resulted in device efficiency improvements, observed mainly due to an open-circuit voltage (Voc) enhancement. Replacement of the CdS buffer layer with a higher band gap alternative can increase the short-circuit current density (Jsc) and also eliminate the use of Cd. In many alternative-buffer attempts, however, the Jsc gain was accompanied by a Voc loss, resulting in some degree of performance loss. In order to better understand the impact of RbF-PDT, we analyze a combination of experimental devices produced in the same in-line CIGS run with and without RbF-PDT in combination with chemical-bath-deposited CdS and Zn(O,S) buffers. Low-temperature current–voltage curves indicate a difference in Rb impact on the CIGS/CdS and CIGS/Zn(O,S) p-n junctions. For example, the diode-current barrier which creates a rollover often observed in RbF-treated CIGS/CdS current–voltage curves is significantly reduced for the CIGS/Zn(O,S) junction. Although the RbF-PDT had a positive impact on both junction partner combinations, the CIGS/Zn(O,S) devices' Voc and fill factor (FF) benefited stronger from the RbF treatment. As a result, in our samples, the Jsc and FF gain balanced the Voc loss, thus reducing the efficiency difference between cells with CdS and Zn(O,S) buffers

Impact of Ag content on device properties of Cu(In,Ga)Se

Partial substitution of Cu by Ag in Cu(In,Ga)Se2 (CIGS) solar cells is advantageous as it allows lower temperature growth while maintaining high performance. To understand the role of Ag on device performance, we present a comprehensive analysis of (Ag,Cu)(In,Ga)Se2 (ACIGS) samples with an [Ag]/([Ag]+[Cu]) (AAC) ratio varying from 7% to 22%. The analysis involves a set of material and device characterization techniques as well as numerical simulations. Multiple electrical and material properties show a systematic dependence on the increased Ag content. These include a carrier-density decrease, a grain-size increase, and a flattened [Ga]/([Ga] + [In]) (GGI) profile leading to a higher minimum band gap energy and a reduced back grading. Although the best performing device (PCE = 18.0%) in this set has an AAC = 7%, cells with higher Ag contents have an advantage of a smoother absorber surface which is attractive for tandem applications, despite their slightly inferior conversion efficiencies (PCE = 16.4% for 22% Ag)

Advances in Cost-Efficient Thin-Film Photovoltaics Based on Cu(In,Ga)Se2

In this article, we discuss the leading thin-film photovoltaic (PV) technology based on the Cu(In,Ga)Se2 (CIGS) compound semiconductor. This contribution includes a general comparison with the conventional Si-wafer-based PV technology and discusses the basics of the CIGS technology as well as advances in world-record-level conversion efficiency, production, applications, stability, and future developments with respect to a flexible product. Once in large-scale mass production, the CIGS technology has the highest potential of all PV technologies for cost-efficient clean energy generation

Holistic yield modeling, top-down loss analysis, and efficiency potential study of thin-film solar modules

Precise modelling of solar cells devices under various conditions is essential to guide improvements in optimisation and performance of future technologies. Here, the authors present a holistic numerical model, verified with real-world data of thin-film CIGS modules, that can conduct loss analysis and predict the energy yield of thin film solar cells

One-Step Thermal Gradient- and Antisolvent-Free Crystallization of All-Inorganic Perovskites for Highly Efficient and Thermally Stable Solar Cells.

All-inorganic perovskites have emerged as promising photovoltaic materials due to their superior thermal stability compared to their heat-sensitive hybrid organic-inorganic counterparts. In particular, CsPbI2 Br shows the highest potential for developing thermally-stable perovskite solar cells (PSCs) among all-inorganic compositions. However, controlling the crystallinity and morphology of all-inorganic compositions is a significant challenge. Here, a simple, thermal gradient- and antisolvent-free method is reported to control the crystallization of CsPbI2 Br films. Optical in situ characterization is used to investigate the dynamic film formation during spin-coating and annealing to understand and optimize the evolving film properties. This leads to high-quality perovskite films with micrometer-scale grain sizes with a noteworthy performance of 17% (≈16% stabilized), fill factor (FF) of 80.5%, and open-circuit voltage (VOC ) of 1.27 V. Moreover, excellent phase and thermal stability are demonstrated even after extreme thermal stressing at 300 °C

Irradiation-dependent topology optimization of metallization grid patterns and variation of contact layer thickness used for latitude-based yield gain of thin-film solar modules

Abstract: We show that the concept of topology optimization for metallization grid patterns of thin-film solar devices can be applied to monolithically integrated solar cells. Different irradiation intensities favor different topological grid designs as well as a different thickness of the transparent conductive oxide (TCO) layer. For standard laboratory efficiency determination, an irradiation power of 1000W/m2 is generally applied. However, this power rarely occurs for real-world solar modules operating at mid-latitude locations. Therefore, contact layer thicknesses and also lateral grid patterns should be optimized for lower irradiation intensities. This results in material production savings for the grid and TCO layer of up to 50 % and simultaneously a significant gain in yield of over 1% for regions with a low annual mean irradiation. Graphical Abstract: [Figure not available: see fulltext.]Numerical Analysi