Effective order strong stability preserving Runge–Kutta methods

We apply the concept of effective order to strong stability preserving (SSP) explicit Runge–Kutta methods. Relative to classical Runge–Kutta methods, effective order methods are designed to satisfy a relaxed set of order conditions, but yield higher order accuracy when composed with special starting and stopping methods. The relaxed order conditions allow for greater freedom in the design of effective order methods. We show that this allows the construction of four-stage SSP methods with effective order four (such methods cannot have classical order four). However, we also prove that effective order five methods—like classical order five methods—require the use of non-positive weights and so cannot be SSP. By numerical optimization, we construct explicit SSP Runge–Kutta methods up to effective order four and establish the optimality of many of them. Numerical experiments demonstrate the validity of these methods in practice

Temperature dependent carrier lifetime studies of Mo in crystalline silicon

The capture cross sections of both electronsσn and holes σp were determined for interstitialmolybdenum in crystalline silicon over the temperature range of −110 to 150 °C. Carrier lifetimemeasurements were performed on molybdenum-contaminated silicon using a temperature controlled photoconductance instrument. Injection dependent lifetime spectroscopy was applied at each temperature to calculate σp and σn. This analysis involved a novel approach that independently determined the capture cross sections at each temperature assuming a known defect density and thermal velocity. Since the energy state is in the lower half of the bandgap, the determination of σp is unaffected by the defect energy at all temperatures, and σp is found to decrease with temperature in a fashion consistent with excitonic Auger capture. At temperatures below 0 °C, the determination of σn is also unaffected by the defect energy due to the suppression of thermal emission, and σn decreases with temperature as well. It is shown that a projection of σn to higher temperature suggests the defect has an energy of 0.375 eV above the valance band edge of silicon.D.M. likes to thank the Australian Research Council for fellowship and G.C. likes to thank “CrystalClear Integrated Project” Contract No. SES6-CT_2003-502583 funded by the European Commission

The Pathological Changes affecting the Endometrium: A Contribution towards their Classification.*

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On the Conductance Sum Rule for the Hierarchical Edge States of the Fractional Quantum Hall Effect

The conductance sum rule for the hierarchical edge channel currents of a Fractional Quantum Hall Effect state is derived analytically within the Haldane-Halperin hierarchy scheme. We provide also an intuitive interpretation for the hierarchical drift velocities of the edge excitations.Comment: 11 pages, no figure, Revtex 3.0, IC/93/329, ASITP-93-5

Charged Defects and Phonon Hall Effects in Ionic Crystals

It has been known for decades that a magnetic field can deflect phonons as they flow in response to a thermal gradient, producing a thermal Hall effect. Several recent experiments have revealed ratios of the phonon Hall conductivity to the phonon longitudinal conductivity in oxide dielectrics that are larger than $10^{-3}$ when phonon mean-free-paths exceed phonon wavelengths. At the same time $\kappa_{H}/\kappa_{L}$ is not strongly temperature dependent. We argue that these two properties together imply a mechanism related to phonon scattering from defects that break time-reversal symmetry, and we show that Lorentz forces acting on charged defects produce substantial skew-scattering amplitudes, and related thermal Hall effects that are consistent with recent observations

Observability of counterpropagating modes at fractional-quantum-Hall edges

When the bulk filling factor is equal to 1 - 1/m with m odd, at least one counterpropagating chiral collective mode occurs simultaneously with magnetoplasmons at the edge of fractional-quantum-Hall samples. Initial experimental searches for an additional mode were unsuccessful. In this paper, we address conditions under which its observation should be expected in experiments where the electronic system is excited and probed by capacitive coupling. We derive realistic expressions for the velocity of the slow counterpropagating mode, starting from a microscopic calculation which is simplified by a Landau-Silin-like separation between long-range Hartree and residual interactions. The microscopic calculation determines the stiffness of the edge to long-wavelength neutral excitations, which fixes the slow-mode velocity, and the effective width of the edge region, which influences the magnetoplasmon dispersion.Comment: 18 pages, RevTex, 6 figures, final version to be published in Physical Review

Streda-like formula in spin Hall effect

A generalized Streda formula is derived for the spin transport in spin-orbit coupled systems. As compared with the original Streda formula for charge transport, there is an extra contribution of the spin Hall conductance whenever the spin is not conserved. For recently studied systems with quantum spin Hall effect in which the z-component spin is conserved, this extra contribution vanishes and the quantized value of spin Hall conductivity can be reproduced in the present approach. However, as spin is not conserved in general, this extra contribution can not be neglected, and the quantization is not exact.Comment: 4 pages, no figur