Magnetoresistance of disordered graphene: from low to high temperatures

We present the magnetoresistance (MR) of highly doped monolayer graphene layers grown by chemical vapor deposition on 6H-SiC. The magnetotransport studies are performed on a large temperature range, from $T$ = 1.7 K up to room temperature. The MR exhibits a maximum in the temperature range $120-240$ K. The maximum is observed at intermediate magnetic fields ($B=2-6$ T), in between the weak localization and the Shubnikov-de Haas regimes. It results from the competition of two mechanisms. First, the low field magnetoresistance increases continuously with $T$ and has a purely classical origin. This positive MR is induced by thermal averaging and finds its physical origin in the energy dependence of the mobility around the Fermi energy. Second, the high field negative MR originates from the electron-electron interaction (EEI). The transition from the diffusive to the ballistic regime is observed. The amplitude of the EEI correction points towards the coexistence of both long and short range disorder in these samples

Quantum Hall resistance standards from graphene grown by chemical vapor deposition on silicon carbide

Replacing GaAs by graphene to realize more practical quantum Hall resistance standards (QHRS), accurate to within $10^{-9}$ in relative value, but operating at lower magnetic fields than 10 T, is an ongoing goal in metrology. To date, the required accuracy has been reported, only few times, in graphene grown on SiC by sublimation of Si, under higher magnetic fields. Here, we report on a device made of graphene grown by chemical vapour deposition on SiC which demonstrates such accuracies of the Hall resistance from 10 T up to 19 T at 1.4 K. This is explained by a quantum Hall effect with low dissipation, resulting from strongly localized bulk states at the magnetic length scale, over a wide magnetic field range. Our results show that graphene-based QHRS can replace their GaAs counterparts by operating in as-convenient cryomagnetic conditions, but over an extended magnetic field range. They rely on a promising hybrid and scalable growth method and a fabrication process achieving low-electron density devices.Comment: 12 pages, 8 figure

Fermi-surface transformation across the pseudogap critical point of the cuprate superconductor La1.6−x_{1.6-x}Nd0.4_{0.4}Srx_{x}CuO4_4

The electrical resistivity $\rho$ and Hall coefficient R$_H$ of the tetragonal single-layer cuprate Nd-LSCO were measured in magnetic fields up to $H = 37.5$ T, large enough to access the normal state at $T \to 0$, for closely spaced dopings $p$ across the pseudogap critical point at $p^\star = 0.235$. Below $p^\star$, both coefficients exhibit an upturn at low temperature, which gets more pronounced with decreasing $p$. Taken together, these upturns show that the normal-state carrier density $n$ at $T = 0$ drops upon entering the pseudogap phase. Quantitatively, it goes from $n = 1 + p$ at $p = 0.24$ to $n = p$ at $p = 0.20$. By contrast, the mobility does not change appreciably, as revealed by the magneto-resistance. The transition has a width in doping and some internal structure, whereby R$_H$ responds more slowly than $\rho$ to the opening of the pseudogap. We attribute this difference to a Fermi surface that supports both hole-like and electron-like carriers in the interval $0.2 < p < p^\star$, with compensating contributions to R$_H$. Our data are in excellent agreement with recent high-field data on YBCO and LSCO. The quantitative consistency across three different cuprates shows that a drop in carrier density from $1 + p$ to $p$ is a universal signature of the pseudogap transition at $T=0$. We discuss the implication of these findings for the nature of the pseudogap phase.Comment: 11 pages, 12 figure

Bmi1+ Progenitor Cell Dynamics in Murine Cornea During Homeostasis and Wound Healing

The outermost layer of the eye, the cornea, is renewed continuously throughout life. Stem cells of the corneal epithelium reside in the limbus at the corneal periphery and ensure homeostasis of the central epithelium. However, in young mice, homeostasis relies on cells located in the basal layer of the central corneal epithelium. Here, we first studied corneal growth during the transition from newborn to adult and assessed Keratin 19 (Krt19) expression as a hallmark of corneal maturation. Next, we set out to identify a novel marker of murine corneal epithelial progenitor cells before, during and after maturation, and we found that Bmi1 is expressed in the basal epithelium of the central cornea and limbus. Furthermore, we demonstrated that Bmi1+ cells participated in tissue replenishment in the central cornea. These Bmi1+ cells did not maintain homeostasis of the cornea for more than 3 months, reflecting their status as progenitor rather than stem cells. Finally, after injury, Bmi1+ cells fueled homeostatic maintenance, whereas wound closure occurred via epithelial reorganization. Stem Cells 2018

Anisotropy of the Seebeck Coefficient in the Cuprate Superconductor YBa2_{2}Cu3_{3}Oy_{y}: Fermi-Surface Reconstruction by Bidirectional Charge Order

The Seebeck coefficient $S$ of the cuprate YBa$_{2}$Cu$_{3}$O$_{y}$ was measured in magnetic fields large enough to suppress superconductivity, at hole dopings $p = 0.11$ and $p = 0.12$, for heat currents along the $a$ and $b$ directions of the orthorhombic crystal structure. For both directions, $S/T$ decreases and becomes negative at low temperature, a signature that the Fermi surface undergoes a reconstruction due to broken translational symmetry. Above a clear threshold field, a strong new feature appears in $S_{\rm b}$, for conduction along the $b$ axis only. We attribute this feature to the onset of 3D-coherent unidirectional charge-density-wave modulations seen by x-ray diffraction, also along the $b$ axis only. Because these modulations have a sharp onset temperature well below the temperature where $S/T$ starts to drop towards negative values, we infer that they are not the cause of Fermi-surface reconstruction. Instead, the reconstruction must be caused by the quasi-2D bidirectional modulations that develop at significantly higher temperature.Comment: 7 pages, 5 figure

Multifractal Analysis of inhomogeneous Bernoulli products

We are interested to the multifractal analysis of inhomogeneous Bernoulli products which are also known as coin tossing measures. We give conditions ensuring the validity of the multifractal formalism for such measures. On another hand, we show that these measures can have a dense set of phase transitions