Broadband dielectric microwave microscopy on μ\mum length scales

We demonstrate that a near-field microwave microscope based on a transmission line resonator allows imaging in a substantially wide range of frequencies, so that the microscope properties approach those of a spatially-resolved impedance analyzer. In the case of an electric probe, the broadband imaging can be used in a direct fashion to separate contributions from capacitive and resistive properties of a sample at length scales on the order of one micron. Using a microwave near-field microscope based on a transmission line resonator we imaged the local dielectric properties of a Focused Ion Beam (FIB) milled structure on a high-dielectric-constant Ba_{0.6}Sr_{0.4}TiO_3 (BSTO) thin film in the frequency range from 1.3 GHz to 17.4 GHz. The electrostatic approximation breaks down already at frequencies above ~10 GHz for the probe geometry used, and a full-wave analysis is necessary to obtain qualitative information from the images.Comment: 19 pages (preprint format), 5 figures; to be published in Review of Scientific Instrument

Near-Field Microwave Microscopy on nanometer length scales

The Near-Field Microwave Microscope (NSMM) can be used to measure ohmic losses of metallic thin films. We report on the presence of a new length scale in the probe-to- sample interaction for the NSMM. We observe that this length scale plays an important role when the tip to sample separation is less than about 10nm. Its origin can be modeled as a tiny protrusion at the end of the tip. The protrusion causes deviation from a logarithmic increase of capacitance versus decreasing height of the probe above the sample. We model this protrusion as a cone at the end of a sphere above an infinite plane. By fitting the frequency shift of the resonator versus height data (which is directly related to capacitance versus height) for our experimental setup, we find the protrusion size to be 3nm to 5nm. For one particular tip, the frequency shift of the NSMM relative to 2 micrometers away saturates at a value of about -1150 kHz at a height of 1nm above the sample, where the nominal range of sheet resistance values of the sample are 15 ohms to 150 ohms. Without the protrusion, the frequency shift would have followed the logarithmic dependence and reached a value of about -1500 kHz.Comment: 6 pages, 7 figures (included in 6 pages

Optics and Quantum Electronics

Contains reports on nine research projects split into two sections.National Science Foundation (Grant DAR80-08752)National Science Foundation (Grant ECS79-19475)Joint Services Electronics Program (Contract DAAG29-83-K-0003)National Science Foundation (Grant ECS80-20639)National Science Foundation (Grant ECS82-11650

Nanometer-Scale Materials Contrast Imaging with a Near-Field Microwave Microscope

We report topography-free materials contrast imaging on a nano-fabricated Boron-doped Silicon sample measured with a Near-field Scanning Microwave Microscope over a broad frequency range. The Boron doping was performed using the Focus Ion Beam technique on a Silicon wafer with nominal resistivity of 61 Ohm.cm. A topography-free doped region varies in sheet resistance from 1000Ohm/Square to about 400kOhm/Square within a lateral distance of 4 micrometer. The qualitative spatial-resolution in sheet resistance imaging contrast is no worse than 100 nm as estimated from the frequency shift signal.Comment: 5 pages, 3 figures, 1 tabl

Quantitative imaging of dielectric permittivity and tunability with a near-field scanning microwave microscope

We describe the use of a near-field scanning microwave microscope to image the permittivity and tunability of bulk and thin film dielectric samples on a length scale of about 1 micron. The microscope is sensitive to the linear permittivity, as well as to nonlinear dielectric terms, which can be measured as a function of an applied electric field. We introduce a versatile finite element model for the system, which allows quantitative results to be obtained. We demonstrate use of the microscope at 7.2 GHz with a 370 nm thick barium strontium titanate thin film on a lanthanum aluminate substrate. This technique is nondestructive and has broadband (0.1-50 GHz) capability. The sensitivity of the microscope to changes in relative permittivity is 2 at permittivity = 500, while the nonlinear dielectric tunability sensitivity is 10^-3 cm/kV.Comment: 12 pages, 10 figures, to be published in Rev. Sci. Instrum., July, 200

Comparative evaluation of protective coatings and focused ion beam chemical vapor deposition processes

Dual-beam instruments incorporate both an electron column and an ion column into a single instrument, and therefore allow the chemical vapor deposition (CVD) process to be either ion- or electron-beam assisted. Damage has been observed in the surface layers of specimens in which ion-beam assisted CVD processes have been employed. Cross-section transmission electron microscopy (TEM) has been used to compare (100) Si substrates on which Pt metal lines have been grown by ion- and electron-beam assisted CVD processes. The micrographs show that a 30 keV Ga+ ion beam, a 5 keV ion beam, and a 3 keV electron beam imparts 50 nm, 13 nm, and 3 nm of damage to the Si substrate, respectively. In addition, Au-Pd and Cr sputter coatings were evaluated for the prevention of ion-beam induced surface damage. TEM cross-section specimens revealed that Cr sputter coatings \u3e 30 nm in thickness are sufficient to protect the (100) Si surface from the 30 keV Ga+ ion beam while Au-Pd sputter coatings up to 70 nm in thickness may be discontinuous and, therefore, will not protect surface regions from ion beam damage. (C) 2002 American Vacuum Society

The focused ion beam as an integrated circuit restructuring tool

One of the capabilities of focused ion beam systems is ion milling. The purpose of this work is to explore this capability as a tool for integrated circuit restructuring. Methods for cutting and joining conductors are needed. Two methods for joining conductors are demonstrated. The first consists of spinning nitrocellulose (a self‐developing resist) on the circuit, ion exposing an area, say, 7×7 μm, then milling a smaller via with sloping sidewalls through the first metal layer down to the second, e‐beam evaporating metal, and then dissolving the nitrocellulose to achieve liftoff. The resistance of these links between two metal levels varied from 1 to 7 Ω. The second, simpler method consists of milling a via with vertical sidewalls down to the lower metal layer, then reducing the milling scan to a smaller area in the center of this via, thereby redepositing the metal from the lower layer on the vertical sidewall. The short circuit thus achieved varied from 0.4 to 1.5 Ω for vias of dimensions 3×3 μm to 1×1 μm, respectively. The time to mill a 1×1 μm via with a 68 keV Ga+ beam, of 220 Pa current is 60 s. In a system optimized for this application, this milling time is expected to be reduced by a factor of at least 100. In addition, cuts have been made in 1‐μm‐thick Al films covered by 0.65 μm of SiO2. These cuts have resistances in excess of 20 MΩ. This method of circuit restructuring can work at dimensions a factor of 10 smaller than laser zapping and requires no special sites to be fabricated

Crystal growth of PbTe and (Pb, Sn)Te by the bridgman method and by THM

Synthesis and growth of PbTe and (Pb, Sn)Te single crystals by the Bridgman method and by the Travelling Heater Method (THM) from Te-rich solutions are described. It is to be seen from comparative investigations that seeded THM growth reproducibly provides oriented single-crystalline ingots free of low-angle grain boundaries and with etch pit densities of 8-12 × 104 cm-2. All the materials were p-type with carrier concentrations from 1 to 2 × 1018 cm-3

Submicron Structure Fabrication and Research

Contains reports on six research projects.Joint Services Electronics Program (Contract DAAG29-78-C-0020)Joint Services Electronics Program (Contract DAAG29-80-C-0104)M.I.T. Sloan Fund for Basic ResearchU.S. Navy - Office of Naval Research (Contract N00014-79-C-0908)Lawrence Livermore Laboratory (Subcontract 206-92-09)U.S. Department of Energy (Contract DE-ACO2-80-E10179)Harkness Foundatio